JP5104220B2 - 回折光学素子およびその製造方法 - Google Patents
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- 239000002243 precursor Substances 0.000 claims description 54
- 238000005245 sintering Methods 0.000 claims description 53
- 239000002994 raw material Substances 0.000 claims description 48
- 239000000919 ceramic Substances 0.000 claims description 46
- 230000003746 surface roughness Effects 0.000 claims description 41
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- 239000000463 material Substances 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 3
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- 238000002360 preparation method Methods 0.000 description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- -1 for example Substances 0.000 description 2
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- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 244000166124 Eucalyptus globulus Species 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
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- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Description
Claims (9)
- 赤外線を透過可能なセラミックスからなり、表面に突出部と溝部とが繰り返し形成された回折光学素子であって、
前記表面のうち光学有効領域内の面粗さRaの平均値が0.05μm以下であり、
前記表面のうち光学有効領域内における面粗さRaの差が0.02μm以下であり、
前記回折光学素子は、前記セラミックスからなる粉末の焼結体であり、
前記回折光学素子の光軸を含む断面における前記突出部の先端は、前記粉末の平均粒径の2分の1よりも大きい曲率半径を有している、回折光学素子。 - 前記回折光学素子の光軸を含む断面における前記溝部の底は、前記粉末の平均粒径の2分の1よりも大きい曲率半径を有している、請求項1に記載の回折光学素子。
- 前記回折光学素子の光軸を含む断面における前記溝部の底において、前記光軸から遠い側の面は、前記底から離れるにしたがって前記光軸から離れるように傾斜するとともに、前記面と前記光軸に平行な直線とは、7°以上75°以下の角度をなしている、請求項1または2に記載の回折光学素子。
- 赤外線を透過可能なセラミックスからなり、表面に突出部と溝部とが繰り返し形成された回折光学素子の製造方法であって、
前記セラミックスからなる原料粉末が成形されることにより、成形体が作製される工程と、
前記成形体が熱処理されて焼結前駆体が作製される工程と、
前記焼結前駆体が、型により拘束されつつ加圧され、かつ加熱されることにより変形されて、加圧焼結体が作製される工程とを備え、
前記型は、前記突出部を成形する突出部成形部と、前記溝部を成形する溝部成形部とを含み、
前記加圧焼結体が作製される工程において前記型に拘束された前記焼結前駆体の光軸を含む断面における、前記型の前記突出部成形部の底は、前記原料粉末の平均粒径の2分の1よりも大きい曲率半径を有し、
前記表面のうち光学有効領域内の面粗さRaの平均値が0.05μm以下であり、前記表面のうち光学有効領域内における面粗さRaの差が0.02μm以下である前記回折光学素子が製造される、回折光学素子の製造方法。 - 前記断面における前記型の前記溝部成形部の先端は、前記原料粉末の平均粒径の2分の1よりも大きい曲率半径を有している、請求項4に記載の回折光学素子の製造方法。
- 赤外線を透過可能なセラミックスからなり、表面に突出部と溝部とが繰り返し形成された回折光学素子の製造方法であって、
前記セラミックスからなる原料粉末が成形されることにより、成形体が作製される工程と、
前記成形体が熱処理されて焼結前駆体が作製される工程と、
前記焼結前駆体が、型により拘束されつつ加圧され、かつ加熱されることにより変形されて、加圧焼結体が作製される工程とを備え、
前記型は、前記突出部を成形する突出部成形部と、前記溝部を成形する溝部成形部とを含み、
前記加圧焼結体が作製される工程において前記型に拘束された前記焼結前駆体の光軸を含む断面における、前記型の前記溝部成形部の先端は、前記原料粉末の平均粒径の2分の1よりも大きい曲率半径を有し、
前記表面のうち光学有効領域内の面粗さRaの平均値が0.05μm以下であり、前記表面のうち光学有効領域内における面粗さRaの差が0.02μm以下である前記回折光学素子が製造される、回折光学素子の製造方法。 - 前記断面における前記溝部成形部の先端において、前記光軸から遠い側の面は、前記先端から離れるにしたがって前記光軸から離れるように傾斜するとともに、前記面と前記光軸に平行な直線とは、7°以上75°以下の角度をなしている、請求項4〜6のいずれか1項に記載の回折光学素子の製造方法。
- 前記型は、砥石または砥粒を用いて研削加工されている、請求項4〜7のいずれか1項に記載の回折光学素子の製造方法。
- 請求項4〜8のいずれか1項に記載の回折光学素子の製造方法により製造された、回折光学素子。
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US12/740,094 US8294996B2 (en) | 2007-11-02 | 2008-10-31 | Diffractive optical element and method of manufacturing the same |
EP08843762.9A EP2211208A4 (en) | 2007-11-02 | 2008-10-31 | DIFFRACTIVE OPTICAL ELEMENT AND MANUFACTURING METHOD THEREOF |
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US20130160492A1 (en) * | 2011-12-23 | 2013-06-27 | Guillermo R Villalobos | Polished, hot pressed, net shape ceramics |
US9981844B2 (en) * | 2012-03-08 | 2018-05-29 | Infineon Technologies Ag | Method of manufacturing semiconductor device with glass pieces |
JP6058402B2 (ja) * | 2012-06-08 | 2017-01-11 | 株式会社日立ハイテクノロジーズ | 曲面回折格子の製造方法、および曲面回折格子の型 |
JP5972100B2 (ja) * | 2012-08-13 | 2016-08-17 | キヤノン株式会社 | 反射型回折素子 |
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JPH10221516A (ja) * | 1997-02-12 | 1998-08-21 | Olympus Optical Co Ltd | レリーフ型光学素子の製造方法 |
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