JP5091130B2 - Ｅｕｖ光源集光器寿命の改善 - Google Patents

Ｅｕｖ光源集光器寿命の改善 Download PDF

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Publication number
JP5091130B2
JP5091130B2 JP2008519425A JP2008519425A JP5091130B2 JP 5091130 B2 JP5091130 B2 JP 5091130B2 JP 2008519425 A JP2008519425 A JP 2008519425A JP 2008519425 A JP2008519425 A JP 2008519425A JP 5091130 B2 JP5091130 B2 JP 5091130B2
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plasma
light source
laser
euv light
source material
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JP2008544575A5 (enExample
JP2008544575A (ja
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ウィリアム エヌ パートロ
アレクサンダー アイ アーショフ
イゴー ヴィー フォーメンコフ
オリー コーディキン
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サイマー インコーポレイテッド
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/0035—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state the material containing metals as principal radiation-generating components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Epidemiology (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning In General (AREA)
JP2008519425A 2005-06-27 2006-06-23 Ｅｕｖ光源集光器寿命の改善 Expired - Fee Related JP5091130B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/168,190 US7365349B2 (en) 2005-06-27 2005-06-27 EUV light source collector lifetime improvements
US11/168,190 2005-06-27
PCT/US2006/024463 WO2007002386A2 (en) 2005-06-27 2006-06-23 Euv light source collector lifetime improvements

Publications (3)

Publication Number Publication Date
JP2008544575A JP2008544575A (ja) 2008-12-04
JP2008544575A5 JP2008544575A5 (enExample) 2009-08-06
JP5091130B2 true JP5091130B2 (ja) 2012-12-05

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008519425A Expired - Fee Related JP5091130B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器寿命の改善
JP2008519459A Expired - Fee Related JP5156625B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和
JP2008519423A Pending JP2008544574A (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2008519459A Expired - Fee Related JP5156625B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和
JP2008519423A Pending JP2008544574A (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和

Country Status (4)

Country Link
US (1) US7365349B2 (enExample)
EP (1) EP1899697B1 (enExample)
JP (3) JP5091130B2 (enExample)
WO (1) WO2007002386A2 (enExample)

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US7671349B2 (en) 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
JP4807560B2 (ja) * 2005-11-04 2011-11-02 国立大学法人 宮崎大学 極端紫外光発生方法および極端紫外光発生装置
NL1032674C2 (nl) * 2006-10-13 2008-04-15 Stichting Fund Ond Material Stralingsbron voor elektromagnetische straling met een golflengte in het extreem ultraviolet (XUV) golflengtegebied.
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
JP5086664B2 (ja) * 2007-03-02 2012-11-28 ギガフォトン株式会社 極端紫外光源装置
JP5001055B2 (ja) * 2007-04-20 2012-08-15 株式会社小松製作所 極端紫外光源装置
KR101333032B1 (ko) * 2007-06-12 2013-11-26 코닌클리케 필립스 엔.브이. 감소된 반사율을 향상시키기 위하여 ｅｕｖ 광 컴포넌트를 인시추 처리하는 광학 장치 및 방법
CN101785369A (zh) * 2007-08-23 2010-07-21 Asml荷兰有限公司 用于产生极紫外辐射的模块和方法
US8901521B2 (en) * 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
US7655925B2 (en) 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US7812329B2 (en) * 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US7760341B2 (en) * 2007-09-04 2010-07-20 Sematech, Inc. Systems and methods for in-situ reflectivity degradation monitoring of optical collectors used in extreme ultraviolet (EUV) lithography processes
KR20140097574A (ko) 2007-11-06 2014-08-06 칼 짜이스 에스엠티 게엠베하 광학면으로부터 오염층을 제거하는 방법, 세정 가스를 생성하는 방법 및 대응하는 세정 및 세정 가스 생성 장치들
US8891058B2 (en) * 2008-07-18 2014-11-18 Koninklijke Philips N.V. Extreme UV radiation generating device comprising a contamination captor
US8519366B2 (en) * 2008-08-06 2013-08-27 Cymer, Inc. Debris protection system having a magnetic field for an EUV light source
KR101052922B1 (ko) * 2008-12-22 2011-07-29 주식회사 하이닉스반도체 극자외선 광원 장치
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
JP5687488B2 (ja) 2010-02-22 2015-03-18 ギガフォトン株式会社 極端紫外光生成装置
US8368039B2 (en) 2010-04-05 2013-02-05 Cymer, Inc. EUV light source glint reduction system
US9029797B2 (en) * 2013-07-25 2015-05-12 Agilent Technologies, Inc. Plasma-based photon source, ion source, and related systems and methods

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US7365349B2 (en) 2008-04-29
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