JP5071856B2 - 酸化イットリウム材料及び半導体製造装置用部材 - Google Patents

酸化イットリウム材料及び半導体製造装置用部材 Download PDF

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Publication number
JP5071856B2
JP5071856B2 JP2008046329A JP2008046329A JP5071856B2 JP 5071856 B2 JP5071856 B2 JP 5071856B2 JP 2008046329 A JP2008046329 A JP 2008046329A JP 2008046329 A JP2008046329 A JP 2008046329A JP 5071856 B2 JP5071856 B2 JP 5071856B2
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JP
Japan
Prior art keywords
yttrium oxide
oxide material
sic
silicon carbide
particle size
Prior art date
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JP2008046329A
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English (en)
Japanese (ja)
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JP2008255001A (ja
Inventor
義政 小林
祐司 勝田
博明 阪井
皓一 新原
忠親 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Nagaoka University of Technology
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NGK Insulators Ltd
Nagaoka University of Technology
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Publication date
Application filed by NGK Insulators Ltd, Nagaoka University of Technology filed Critical NGK Insulators Ltd
Priority to JP2008046329A priority Critical patent/JP5071856B2/ja
Priority to TW097107855A priority patent/TWI433825B/zh
Priority to US12/043,988 priority patent/US7833924B2/en
Priority to EP20080250811 priority patent/EP1972599B1/en
Priority to KR1020080022852A priority patent/KR101457215B1/ko
Priority to CN2008100951590A priority patent/CN101265101B/zh
Publication of JP2008255001A publication Critical patent/JP2008255001A/ja
Application granted granted Critical
Publication of JP5071856B2 publication Critical patent/JP5071856B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/90—Other properties not specified above

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  • Drying Of Semiconductors (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2008046329A 2007-03-12 2008-02-27 酸化イットリウム材料及び半導体製造装置用部材 Active JP5071856B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008046329A JP5071856B2 (ja) 2007-03-12 2008-02-27 酸化イットリウム材料及び半導体製造装置用部材
TW097107855A TWI433825B (zh) 2007-03-12 2008-03-06 氧化釔材料、半導體製造裝置用構件及氧化釔材料之製造方法
US12/043,988 US7833924B2 (en) 2007-03-12 2008-03-07 Yttrium oxide-containing material, component of semiconductor manufacturing equipment, and method of producing yttrium oxide-containing material
EP20080250811 EP1972599B1 (en) 2007-03-12 2008-03-10 Yttrium oxide-containing material, component of semiconductor manufacturing equipment, and method of producing yttrium oxide-containing material
KR1020080022852A KR101457215B1 (ko) 2007-03-12 2008-03-12 산화이트륨 재료, 반도체 제조 장치용 부재 및 산화이트륨재료의 제조 방법
CN2008100951590A CN101265101B (zh) 2007-03-12 2008-03-12 氧化钇材料、半导体制造装置用构件及氧化钇材料的制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007062329 2007-03-12
JP2007062329 2007-03-12
JP2008046329A JP5071856B2 (ja) 2007-03-12 2008-02-27 酸化イットリウム材料及び半導体製造装置用部材

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012176270A Division JP5667607B2 (ja) 2007-03-12 2012-08-08 酸化イットリウム材料、半導体製造装置用部材、及び酸化イットリウム材料の製造方法

Publications (2)

Publication Number Publication Date
JP2008255001A JP2008255001A (ja) 2008-10-23
JP5071856B2 true JP5071856B2 (ja) 2012-11-14

Family

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Family Applications (2)

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JP2008046329A Active JP5071856B2 (ja) 2007-03-12 2008-02-27 酸化イットリウム材料及び半導体製造装置用部材
JP2012176270A Active JP5667607B2 (ja) 2007-03-12 2012-08-08 酸化イットリウム材料、半導体製造装置用部材、及び酸化イットリウム材料の製造方法

Family Applications After (1)

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JP2012176270A Active JP5667607B2 (ja) 2007-03-12 2012-08-08 酸化イットリウム材料、半導体製造装置用部材、及び酸化イットリウム材料の製造方法

Country Status (4)

Country Link
JP (2) JP5071856B2 (zh)
KR (1) KR101457215B1 (zh)
CN (1) CN101265101B (zh)
TW (1) TWI433825B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9440886B2 (en) * 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
JP5911036B1 (ja) * 2014-11-21 2016-04-27 日本イットリウム株式会社 焼結体
US11572617B2 (en) * 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
US11034622B2 (en) * 2016-12-20 2021-06-15 Mitsui Mining & Smelting Co., Ltd. Rare earth oxyfluoride sintered body and method for producing same
CN110800082A (zh) 2017-05-26 2020-02-14 Iones株式会社 氟化氧化钇涂覆膜的形成方法及基于其的氟化氧化钇涂覆膜
KR102106533B1 (ko) * 2017-05-26 2020-05-06 아이원스 주식회사 플로라이드화 이트륨 옥사이드 코팅막의 형성 방법 및 이에 따른 플로라이드화 이트륨 옥사이드 코팅막
KR102062397B1 (ko) * 2017-05-26 2020-01-03 아이원스 주식회사 플로라이드화 옥사이드 박막의 형성 방법 및 이에 따른 플로라이드화 옥사이드 박막
KR102027128B1 (ko) * 2017-08-11 2019-10-01 (주)단단 Yof계 분말의 제조방법
JP6932070B2 (ja) * 2017-11-29 2021-09-08 東京エレクトロン株式会社 フォーカスリング及び半導体製造装置
KR102266656B1 (ko) 2020-12-10 2021-06-18 (주)코미코 용사용 이트륨계 과립 분말 및 이를 이용한 용사 피막
KR102266655B1 (ko) * 2020-12-10 2021-06-18 (주)코미코 이트륨계 과립 분말을 이용한 용사 피막의 제조 방법 및 이를 이용하여 제조된 이트륨계 용사 피막
KR102266658B1 (ko) * 2020-12-10 2021-06-18 주식회사 미코 용사용 이트륨계 과립 분말 및 이를 이용한 용사 피막
KR102684145B1 (ko) * 2021-12-30 2024-07-11 주식회사 원익큐엔씨 오염입자 발생 저감을 극대화 하는 반도체 장비 불화대상물의 불화 가공 방법 및 이에 의해 불화 가공된 부품

Family Cites Families (18)

* Cited by examiner, † Cited by third party
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JPH0733286B2 (ja) * 1988-02-29 1995-04-12 トヨタ自動車株式会社 炭化珪素焼結体の製造方法
JP3186158B2 (ja) * 1992-01-21 2001-07-11 住友電気工業株式会社 複合セラミックス焼結体およびその製造方法
JPH0733526A (ja) * 1993-07-20 1995-02-03 Hitachi Ltd 高強度弗化物セラミックス
JPH07315949A (ja) * 1994-05-23 1995-12-05 Hitachi Ltd 高信頼性耐熱セラミックス及びタービン部品
JPH104083A (ja) * 1996-06-17 1998-01-06 Kyocera Corp 半導体製造用耐食性部材
JP2001179080A (ja) * 1999-12-27 2001-07-03 Nihon Ceratec Co Ltd 低金属汚染の基板処理用部材
JP2002356387A (ja) * 2001-03-30 2002-12-13 Toshiba Ceramics Co Ltd 耐プラズマ性部材
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
JP3894365B2 (ja) * 2002-02-12 2007-03-22 東芝セラミックス株式会社 半導体処理装置用部材
JP4486372B2 (ja) * 2003-02-07 2010-06-23 東京エレクトロン株式会社 プラズマ処理装置
US8460945B2 (en) * 2003-09-30 2013-06-11 Tokyo Electron Limited Method for monitoring status of system components
JP4429742B2 (ja) * 2004-01-21 2010-03-10 住友大阪セメント株式会社 焼結体及びその製造方法
JP4181069B2 (ja) * 2004-02-27 2008-11-12 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2006069843A (ja) * 2004-09-02 2006-03-16 Ibiden Co Ltd 半導体製造装置用セラミック部材
JP5046480B2 (ja) * 2004-09-24 2012-10-10 京セラ株式会社 耐食性部材とその製造方法、およびこれを用いた半導体・液晶製造装置用部材
JP4796354B2 (ja) * 2005-08-19 2011-10-19 日本碍子株式会社 静電チャック及びイットリア焼結体の製造方法
JP4628900B2 (ja) * 2005-08-24 2011-02-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
EP3654756B2 (en) * 2017-07-17 2024-06-12 AB Ludvig Svensson Greenhouse screen

Also Published As

Publication number Publication date
TWI433825B (zh) 2014-04-11
CN101265101B (zh) 2013-02-06
JP5667607B2 (ja) 2015-02-12
TW200902475A (en) 2009-01-16
JP2008255001A (ja) 2008-10-23
KR20080083600A (ko) 2008-09-18
CN101265101A (zh) 2008-09-17
JP2012232897A (ja) 2012-11-29
KR101457215B1 (ko) 2014-10-31

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