JP5062057B2 - 真空処理装置 - Google Patents

真空処理装置 Download PDF

Info

Publication number
JP5062057B2
JP5062057B2 JP2008166403A JP2008166403A JP5062057B2 JP 5062057 B2 JP5062057 B2 JP 5062057B2 JP 2008166403 A JP2008166403 A JP 2008166403A JP 2008166403 A JP2008166403 A JP 2008166403A JP 5062057 B2 JP5062057 B2 JP 5062057B2
Authority
JP
Japan
Prior art keywords
container
processing
processing container
substrate
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008166403A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010010302A (ja
Inventor
芳彦 佐々木
善嗣 田中
寛 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008166403A priority Critical patent/JP5062057B2/ja
Priority to TW098121206A priority patent/TW201009979A/zh
Priority to KR1020090056585A priority patent/KR101059365B1/ko
Priority to CN200910146244XA priority patent/CN101615570B/zh
Publication of JP2010010302A publication Critical patent/JP2010010302A/ja
Application granted granted Critical
Publication of JP5062057B2 publication Critical patent/JP5062057B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2008166403A 2008-06-25 2008-06-25 真空処理装置 Expired - Fee Related JP5062057B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008166403A JP5062057B2 (ja) 2008-06-25 2008-06-25 真空処理装置
TW098121206A TW201009979A (en) 2008-06-25 2009-06-24 Vacuum processing apparatus
KR1020090056585A KR101059365B1 (ko) 2008-06-25 2009-06-24 진공 처리 장치
CN200910146244XA CN101615570B (zh) 2008-06-25 2009-06-24 真空处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008166403A JP5062057B2 (ja) 2008-06-25 2008-06-25 真空処理装置

Publications (2)

Publication Number Publication Date
JP2010010302A JP2010010302A (ja) 2010-01-14
JP5062057B2 true JP5062057B2 (ja) 2012-10-31

Family

ID=41495135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008166403A Expired - Fee Related JP5062057B2 (ja) 2008-06-25 2008-06-25 真空処理装置

Country Status (4)

Country Link
JP (1) JP5062057B2 (zh)
KR (1) KR101059365B1 (zh)
CN (1) CN101615570B (zh)
TW (1) TW201009979A (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8562742B2 (en) * 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof
JP5647336B2 (ja) 2011-04-04 2014-12-24 キヤノンアネルバ株式会社 プラズマ処理装置
KR102028913B1 (ko) * 2013-05-31 2019-11-08 엘지디스플레이 주식회사 기판 탈착 장치 및 이를 이용한 평판표시장치의 제조방법
TWI600853B (zh) * 2015-06-05 2017-10-01 Hirata Spinning Chamber device and processing system
US10043689B2 (en) 2015-06-05 2018-08-07 Hirata Corporation Chamber apparatus and processing system
KR102434800B1 (ko) 2015-08-13 2022-08-22 코웨이 주식회사 태블릿형 재생제를 이용한 재생통 및 이를 이용한 재생수 생성 방법
KR102447481B1 (ko) 2015-08-13 2022-09-26 코웨이 주식회사 승하강식 통과부재를 구비한 재생통 및 이를 포함하는 연수기
KR101816120B1 (ko) 2015-08-13 2018-01-08 코웨이 주식회사 반자동 수압식 연수기
JP6774368B2 (ja) * 2017-04-21 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置のメンテナンス方法
CN107610997A (zh) * 2017-07-20 2018-01-19 江苏鲁汶仪器有限公司 一种具有晶圆位置检测装置的气相腐蚀腔体
KR102400583B1 (ko) * 2017-09-22 2022-05-20 삼성전자주식회사 초임계 처리용 공정챔버 및 이를 구비하는 기판처리 장치
JP6956696B2 (ja) * 2017-10-06 2021-11-02 東京エレクトロン株式会社 パーティクル発生抑制方法及び真空装置
JP7169786B2 (ja) * 2018-06-25 2022-11-11 東京エレクトロン株式会社 メンテナンス装置
JP6818001B2 (ja) * 2018-12-12 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス 処理チャンバおよび基板処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63179522A (ja) * 1987-01-21 1988-07-23 Tokyo Electron Ltd アツシング装置
JPH01206625A (ja) * 1988-02-15 1989-08-18 Tokyo Electron Ltd アッシング方法
JPH06151365A (ja) * 1992-11-13 1994-05-31 Hitachi Ltd プラズマ処理装置
JP2828066B2 (ja) * 1996-09-27 1998-11-25 松下電器産業株式会社 基板のプラズマクリーニング装置
JP3451894B2 (ja) * 1997-07-29 2003-09-29 松下電器産業株式会社 電子部品のプラズマ処理装置及びプラズマ処理方法
JPH1154484A (ja) * 1997-08-06 1999-02-26 Matsushita Electric Ind Co Ltd 電子部品のプラズマ処理装置およびプラズマ処理方法
JP4767574B2 (ja) 2005-03-31 2011-09-07 東京エレクトロン株式会社 処理チャンバおよび処理装置

Also Published As

Publication number Publication date
CN101615570A (zh) 2009-12-30
KR101059365B1 (ko) 2011-08-24
KR20100002175A (ko) 2010-01-06
CN101615570B (zh) 2011-11-30
TW201009979A (en) 2010-03-01
JP2010010302A (ja) 2010-01-14

Similar Documents

Publication Publication Date Title
JP5062057B2 (ja) 真空処理装置
KR101923765B1 (ko) 실리콘막의 성막 방법 및 성막 장치
JP4985183B2 (ja) 基板処理装置及び基板処理方法並びに記憶媒体
JP2008192642A (ja) 基板処理装置
KR101447349B1 (ko) 반도체 제조 툴을 위한 밸브 퍼지 어셈블리
TW202343572A (zh) 電漿處理裝置
JP2007095856A (ja) 真空処理装置
US7622393B2 (en) Method and apparatus for manufacturing a semiconductor device, control program thereof and computer-readable storage medium storing the control program
JP7101628B2 (ja) プラズマ処理装置および電極構造体
JP7378357B2 (ja) 基板処理装置およびガス供給配管のパージ方法
TWI445076B (zh) Vacuum processing device
TWI831956B (zh) 清潔處理方法及電漿處理裝置
JP4830995B2 (ja) 基板処理装置及び基板処理方法並びに記憶媒体
JP2004186419A (ja) 減圧乾燥装置、塗布膜形成装置及び減圧乾燥方法
JP2003332213A (ja) 液処理装置および液処理方法
JPH10303099A (ja) 基板処理装置
US10504741B2 (en) Semiconductor manufacturing method and plasma processing apparatus
KR100761771B1 (ko) 공정 챔버
JPWO2005055298A1 (ja) プラズマ処理装置及びマルチチャンバシステム
KR20180124730A (ko) 게이트 밸브 장치 및 기판 처리 시스템
JP2948290B2 (ja) 基板処理装置
KR100489638B1 (ko) 반도체장치제조설비의건식식각설비
JP2009260022A (ja) 基板処理ユニットおよび基板処理装置
WO2011142274A1 (ja) ドライエッチング装置
JP2664216B2 (ja) 真空処理装置の制御方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110607

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120411

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120417

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120618

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120710

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120723

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150817

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees