JP5060296B2 - 移動度を半導体素子において増加させる方法及び装置 - Google Patents

移動度を半導体素子において増加させる方法及び装置 Download PDF

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JP5060296B2
JP5060296B2 JP2007529871A JP2007529871A JP5060296B2 JP 5060296 B2 JP5060296 B2 JP 5060296B2 JP 2007529871 A JP2007529871 A JP 2007529871A JP 2007529871 A JP2007529871 A JP 2007529871A JP 5060296 B2 JP5060296 B2 JP 5060296B2
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JP2008511173A (ja
JP2008511173A5 (enExample
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ケイ． オーロウスキー、マリウス
ベンカテサン、サレシュ
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/795—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in lateral device isolation regions, e.g. STI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2007529871A 2004-08-24 2005-07-27 移動度を半導体素子において増加させる方法及び装置 Expired - Lifetime JP5060296B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/925,108 2004-08-24
US10/925,108 US7288448B2 (en) 2004-08-24 2004-08-24 Method and apparatus for mobility enhancement in a semiconductor device
PCT/US2005/026543 WO2006023219A2 (en) 2004-08-24 2005-07-27 Method and apparatus for mobility enhancement in a semiconductor device

Publications (3)

Publication Number Publication Date
JP2008511173A JP2008511173A (ja) 2008-04-10
JP2008511173A5 JP2008511173A5 (enExample) 2008-09-18
JP5060296B2 true JP5060296B2 (ja) 2012-10-31

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JP2007529871A Expired - Lifetime JP5060296B2 (ja) 2004-08-24 2005-07-27 移動度を半導体素子において増加させる方法及び装置

Country Status (7)

Country Link
US (2) US7288448B2 (enExample)
EP (1) EP1784854A2 (enExample)
JP (1) JP5060296B2 (enExample)
KR (1) KR101218841B1 (enExample)
CN (1) CN100533690C (enExample)
TW (1) TWI423342B (enExample)
WO (1) WO2006023219A2 (enExample)

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US8035141B2 (en) * 2009-10-28 2011-10-11 International Business Machines Corporation Bi-layer nFET embedded stressor element and integration to enhance drive current
KR101576529B1 (ko) * 2010-02-12 2015-12-11 삼성전자주식회사 습식 식각을 이용한 실리콘 파셋트를 갖는 반도체 장치 및 제조방법
US8659054B2 (en) * 2010-10-15 2014-02-25 International Business Machines Corporation Method and structure for pFET junction profile with SiGe channel
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CN103367430B (zh) * 2012-03-29 2016-11-02 中芯国际集成电路制造(上海)有限公司 晶体管以及形成方法
KR20150020845A (ko) * 2013-08-19 2015-02-27 에스케이하이닉스 주식회사 수직 채널을 갖는 반도체 장치, 그를 포함하는 저항 변화 메모리 장치 및 그 제조방법
FR3011119B1 (fr) * 2013-09-23 2017-09-29 Commissariat Energie Atomique Procede de realisation d'un transistor
FR3023411B1 (fr) * 2014-07-07 2017-12-22 Commissariat Energie Atomique Generation localisee de contrainte dans un substrat soi
CN105244281A (zh) * 2015-10-14 2016-01-13 上海华力微电子有限公司 一种半导体器件的制备方法
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Also Published As

Publication number Publication date
US7872311B2 (en) 2011-01-18
TW200629419A (en) 2006-08-16
JP2008511173A (ja) 2008-04-10
KR101218841B1 (ko) 2013-01-21
CN100533690C (zh) 2009-08-26
US7288448B2 (en) 2007-10-30
EP1784854A2 (en) 2007-05-16
TWI423342B (zh) 2014-01-11
US20080006880A1 (en) 2008-01-10
CN1989602A (zh) 2007-06-27
US20060046366A1 (en) 2006-03-02
WO2006023219A3 (en) 2006-09-28
KR20070046139A (ko) 2007-05-02
WO2006023219A2 (en) 2006-03-02

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