JP5054874B2 - リアクタ内でプラチナエッチングを行う方法 - Google Patents

リアクタ内でプラチナエッチングを行う方法 Download PDF

Info

Publication number
JP5054874B2
JP5054874B2 JP2001542603A JP2001542603A JP5054874B2 JP 5054874 B2 JP5054874 B2 JP 5054874B2 JP 2001542603 A JP2001542603 A JP 2001542603A JP 2001542603 A JP2001542603 A JP 2001542603A JP 5054874 B2 JP5054874 B2 JP 5054874B2
Authority
JP
Japan
Prior art keywords
upper electrode
platinum
heater
reactor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001542603A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003515960A5 (enExample
JP2003515960A (ja
Inventor
スティーブン ピー デオーネラス
レスリー ジー ジャード
カート エイ オルソン
Original Assignee
ティーガル コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ティーガル コーポレイション filed Critical ティーガル コーポレイション
Publication of JP2003515960A publication Critical patent/JP2003515960A/ja
Publication of JP2003515960A5 publication Critical patent/JP2003515960A5/ja
Application granted granted Critical
Publication of JP5054874B2 publication Critical patent/JP5054874B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2001542603A 1999-12-02 2000-11-21 リアクタ内でプラチナエッチングを行う方法 Expired - Fee Related JP5054874B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45384299A 1999-12-02 1999-12-02
US09/453,842 1999-12-02
PCT/US2000/031987 WO2001040540A1 (en) 1999-12-02 2000-11-21 Improved reactor with heated and textured electrodes and surfaces

Publications (3)

Publication Number Publication Date
JP2003515960A JP2003515960A (ja) 2003-05-07
JP2003515960A5 JP2003515960A5 (enExample) 2008-02-07
JP5054874B2 true JP5054874B2 (ja) 2012-10-24

Family

ID=23802291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001542603A Expired - Fee Related JP5054874B2 (ja) 1999-12-02 2000-11-21 リアクタ内でプラチナエッチングを行う方法

Country Status (5)

Country Link
US (2) US7439188B2 (enExample)
EP (1) EP1252359B1 (enExample)
JP (1) JP5054874B2 (enExample)
AU (1) AU1786301A (enExample)
WO (1) WO2001040540A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60139868D1 (de) * 2000-06-16 2009-10-22 Ati Properties Inc Verfahren zum spritzformen, zerstäuben und wärmeaustausch
US6496529B1 (en) 2000-11-15 2002-12-17 Ati Properties, Inc. Refining and casting apparatus and method
US8891583B2 (en) 2000-11-15 2014-11-18 Ati Properties, Inc. Refining and casting apparatus and method
JP3963431B2 (ja) * 2002-03-04 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
US6812471B2 (en) 2002-03-13 2004-11-02 Applied Materials, Inc. Method of surface texturizing
US6933508B2 (en) * 2002-03-13 2005-08-23 Applied Materials, Inc. Method of surface texturizing
US20040173314A1 (en) * 2003-03-05 2004-09-09 Ryoji Nishio Plasma processing apparatus and method
TWI342582B (en) * 2003-07-17 2011-05-21 Applied Materials Inc Method of surface texturizing
JP4594070B2 (ja) * 2004-04-06 2010-12-08 三菱電機株式会社 半導体レーザ素子及びその製造方法
US7119032B2 (en) * 2004-08-23 2006-10-10 Air Products And Chemicals, Inc. Method to protect internal components of semiconductor processing equipment using layered superlattice materials
US7578960B2 (en) * 2005-09-22 2009-08-25 Ati Properties, Inc. Apparatus and method for clean, rapidly solidified alloys
US7803211B2 (en) 2005-09-22 2010-09-28 Ati Properties, Inc. Method and apparatus for producing large diameter superalloy ingots
US7803212B2 (en) 2005-09-22 2010-09-28 Ati Properties, Inc. Apparatus and method for clean, rapidly solidified alloys
JP4887910B2 (ja) * 2006-05-30 2012-02-29 パナソニック株式会社 プラズマ処理装置
US8748773B2 (en) * 2007-03-30 2014-06-10 Ati Properties, Inc. Ion plasma electron emitters for a melting furnace
ES2608863T3 (es) 2007-03-30 2017-04-17 Ati Properties Llc Horno de fusión que incluye un emisor de electrones de plasma iónico por descarga de hilo
JP5474291B2 (ja) 2007-11-05 2014-04-16 株式会社アルバック アッシング装置
US7798199B2 (en) 2007-12-04 2010-09-21 Ati Properties, Inc. Casting apparatus and method
US8747956B2 (en) 2011-08-11 2014-06-10 Ati Properties, Inc. Processes, systems, and apparatus for forming products from atomized metals and alloys
DE102015101343A1 (de) * 2015-01-29 2016-08-18 Aixtron Se CVD-Reaktor mit dreidimensional strukturierter Prozesskammerdecke
US10896950B2 (en) * 2017-02-27 2021-01-19 Nxp Usa, Inc. Method and apparatus for a thin film dielectric stack
US10923286B2 (en) 2018-02-21 2021-02-16 Nxp Usa, Inc. Method and apparatus for compensating for high thermal expansion coefficient mismatch of a stacked device
US20190276932A1 (en) * 2018-03-08 2019-09-12 Shimadzu Corporation Film forming apparatus and film forming method
SG11202108622PA (en) * 2019-02-06 2021-09-29 Lam Res Corp Textured silicon semiconductor processing chamber components
GB201919220D0 (en) 2019-12-23 2020-02-05 Spts Technologies Ltd Method of plasma etching
GB201919215D0 (en) 2019-12-23 2020-02-05 Spts Technologies Ltd Method and apparatus for plasma etching

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514391A (en) 1967-05-05 1970-05-26 Nat Res Corp Sputtering apparatus with finned anode
US4033287A (en) 1976-01-22 1977-07-05 Bell Telephone Laboratories, Incorporated Radial flow reactor including glow discharge limiting shield
US4208241A (en) 1978-07-31 1980-06-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4680061A (en) 1979-12-21 1987-07-14 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4743570A (en) 1979-12-21 1988-05-10 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4512391A (en) 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4508161A (en) 1982-05-25 1985-04-02 Varian Associates, Inc. Method for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
US4457359A (en) 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
US4542298A (en) 1983-06-09 1985-09-17 Varian Associates, Inc. Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer
US4535834A (en) 1984-05-02 1985-08-20 Varian Associates, Inc. Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置
US5031571A (en) * 1988-02-01 1991-07-16 Mitsui Toatsu Chemicals, Inc. Apparatus for forming a thin film on a substrate
JPH02267289A (ja) * 1989-04-08 1990-11-01 Seiko Epson Corp ドライ・エッチング法
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5252194A (en) * 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
JP2755471B2 (ja) * 1990-06-29 1998-05-20 日立電線株式会社 希土類元素添加光導波路及びその製造方法
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JPH04316327A (ja) * 1991-04-15 1992-11-06 Toshiba Corp ドライエッチング装置及びチャンバの洗浄方法
US5119460A (en) * 1991-04-25 1992-06-02 At&T Bell Laboratories Erbium-doped planar optical device
US5107538A (en) * 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
US5277751A (en) 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
JP3214910B2 (ja) * 1992-08-18 2001-10-02 富士通株式会社 平面導波路型光増幅器の製造方法
US5800618A (en) * 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
JP3242166B2 (ja) 1992-11-19 2001-12-25 株式会社日立製作所 エッチング装置
US6001432A (en) * 1992-11-19 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Apparatus for forming films on a substrate
JP3381076B2 (ja) 1992-11-24 2003-02-24 ソニー株式会社 ドライエッチング方法
JPH06188108A (ja) 1992-12-21 1994-07-08 Canon Inc 薄膜抵抗器の製造方法、成膜装置用防着板及び成膜装置
US5303319A (en) * 1992-12-28 1994-04-12 Honeywell Inc. Ion-beam deposited multilayer waveguides and resonators
US5718813A (en) * 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5427669A (en) * 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
US5613995A (en) * 1993-04-23 1997-03-25 Lucent Technologies Inc. Method for making planar optical waveguides
JPH0718423A (ja) 1993-07-06 1995-01-20 Japan Energy Corp 薄膜形成装置
JP2972506B2 (ja) 1993-11-02 1999-11-08 日本電気株式会社 Ｐｔを主成分とする合金のエッチング方法
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US5475528A (en) * 1994-03-25 1995-12-12 Corning Incorporated Optical signal amplifier glasses
US5628869A (en) * 1994-05-09 1997-05-13 Lsi Logic Corporation Plasma enhanced chemical vapor reactor with shaped electrodes
JP3107971B2 (ja) * 1994-05-17 2000-11-13 株式会社半導体エネルギー研究所 気相反応装置
WO1996000996A1 (en) * 1994-06-30 1996-01-11 The Whitaker Corporation Planar hybrid optical amplifier
US5483613A (en) * 1994-08-16 1996-01-09 At&T Corp. Optical device with substrate and waveguide structure having thermal matching interfaces
JPH0874028A (ja) * 1994-09-01 1996-03-19 Matsushita Electric Ind Co Ltd 薄膜形成装置および薄膜形成方法
US5555342A (en) * 1995-01-17 1996-09-10 Lucent Technologies Inc. Planar waveguide and a process for its fabrication
US5772770A (en) * 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JPH08259386A (ja) * 1995-03-20 1996-10-08 Matsushita Electric Ind Co Ltd 酸化物薄膜の製造方法及びそれに用いる化学蒸着装置
US5874704A (en) 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
US5563979A (en) * 1995-08-31 1996-10-08 Lucent Technologies Inc. Erbium-doped planar optical device
US5719976A (en) * 1995-10-24 1998-02-17 Lucent Technologies, Inc. Optimized waveguide structure
JP3220631B2 (ja) * 1995-12-07 2001-10-22 松下電器産業株式会社 プラズマ処理方法及び装置
US6214740B1 (en) * 1996-01-26 2001-04-10 Matsushita Electronics Corporation Semiconductor manufacturing apparatus
US5702770A (en) 1996-01-30 1997-12-30 Becton, Dickinson And Company Method for plasma processing
US5753566A (en) 1996-05-23 1998-05-19 Taiwan Semiconductor Manufactured Company, Ltd. Method of spin-on-glass etchback using hot backside helium
US5800619A (en) 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
US5855744A (en) * 1996-07-19 1999-01-05 Applied Komatsu Technology, Inc. Non-planar magnet tracking during magnetron sputtering
US5708557A (en) 1996-08-22 1998-01-13 Packard Hughes Interconnect Company Puncture-resistant electrostatic chuck with flat surface and method of making the same
US5661093A (en) 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US6007673A (en) * 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device
US5904487A (en) * 1996-10-08 1999-05-18 Advanced Micro Devices, Inc. Electrode reshaping in a semiconductor etching device
US5841931A (en) * 1996-11-26 1998-11-24 Massachusetts Institute Of Technology Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby
US5814154A (en) 1997-01-23 1998-09-29 Gasonics International Short-coupled-path extender for plasma source
US5847865A (en) * 1997-02-18 1998-12-08 Regents Of The University Of Minnesota Waveguide optical amplifier
JP2943101B2 (ja) * 1997-05-07 1999-08-30 株式会社ミヤコシ ターンバー装置
US5831262A (en) * 1997-06-27 1998-11-03 Lucent Technologies Inc. Article comprising an optical fiber attached to a micromechanical device
US6046116A (en) * 1997-11-19 2000-04-04 Tegal Corporation Method for minimizing the critical dimension growth of a feature on a semiconductor wafer
US6041734A (en) * 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US6071573A (en) * 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US6157765A (en) * 1998-11-03 2000-12-05 Lucent Technologies Planar waveguide optical amplifier
US6143078A (en) * 1998-11-13 2000-11-07 Applied Materials, Inc. Gas distribution system for a CVD processing chamber

Also Published As

Publication number Publication date
US20020036064A1 (en) 2002-03-28
EP1252359A1 (en) 2002-10-30
EP1252359B1 (en) 2020-03-11
US7439188B2 (en) 2008-10-21
JP2003515960A (ja) 2003-05-07
AU1786301A (en) 2001-06-12
US20080318432A1 (en) 2008-12-25
EP1252359A4 (en) 2011-01-26
WO2001040540A1 (en) 2001-06-07

Similar Documents

Publication Publication Date Title
JP5054874B2 (ja) リアクタ内でプラチナエッチングを行う方法
KR100861678B1 (ko) 금속전극을 형성하기 위한 방법
JP5632280B2 (ja) 異なるアスペクト比の構成を誘電層内にエッチングするための方法、及びその方法によって作成される半導体デバイス、並びにそのための装置
TWI524417B (zh) 用以處理斜角緣部的方法與設備
TWI716452B (zh) 以ｐｅａｌｄ於溝槽中沉積介電膜的方法
CN100378911C (zh) 氮化钛去除方法
JP4421609B2 (ja) 基板処理装置および半導体装置の製造方法、エッチング装置
EP1071834A1 (en) Method of passivating a cvd chamber
JPH1096082A (ja) 基板処理システム構成部材の寿命を延ばす炭素ベース膜の使用
TWI895499B (zh) 蝕刻方法及電漿處理裝置
US6492280B1 (en) Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls
US5496437A (en) Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films
WO2007105432A1 (ja) Ｔｉ系膜の成膜方法および記憶媒体
KR100628607B1 (ko) 클리닝방법,성막장치및성막방법
KR101234492B1 (ko) 기판 처리 방법
CA1143259A (en) Method of cleaning a reactor
JP2001308077A (ja) 半導体製造装置
Menk et al. Dry etching issues in the integration of ferroelectric thin film capacitors
US7141512B2 (en) Method of cleaning semiconductor device fabrication apparatus
TWI877526B (zh) 具多層塗層之半導體腔室組件
JP7254437B2 (ja) シリコン部品を調整するための方法
US6200516B1 (en) Production of corrosion-resistant ceramic members
US6186154B1 (en) Find end point of CLF3 clean by pressure change
CN103789747B (zh) 一种气体喷淋头及制作该气体喷淋头的方法
Maa et al. Effect of temperature on etch rate of iridium and platinum in CF 4/O 2

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071205

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101008

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101014

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110114

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110414

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111201

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120301

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120308

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120530

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120628

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120730

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150803

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150803

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150803

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees