SG11202108622PA - Textured silicon semiconductor processing chamber components - Google Patents

Textured silicon semiconductor processing chamber components

Info

Publication number
SG11202108622PA
SG11202108622PA SG11202108622PA SG11202108622PA SG11202108622PA SG 11202108622P A SG11202108622P A SG 11202108622PA SG 11202108622P A SG11202108622P A SG 11202108622PA SG 11202108622P A SG11202108622P A SG 11202108622PA SG 11202108622P A SG11202108622P A SG 11202108622PA
Authority
SG
Singapore
Prior art keywords
processing chamber
semiconductor processing
silicon semiconductor
chamber components
textured silicon
Prior art date
Application number
SG11202108622PA
Inventor
Lin Xu
Satish Srinivasan
Robin KOSHY
Amir A Yasseri
Justin Tang
Jie Zhang
David Joseph Wetzel
Original Assignee
Lam Res Corp
Silfex Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Silfex Inc filed Critical Lam Res Corp
Publication of SG11202108622PA publication Critical patent/SG11202108622PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Plasma Technology (AREA)
SG11202108622PA 2019-02-06 2020-02-05 Textured silicon semiconductor processing chamber components SG11202108622PA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962801804P 2019-02-06 2019-02-06
US201962835907P 2019-04-18 2019-04-18
US201962886100P 2019-08-13 2019-08-13
PCT/US2020/016710 WO2020163427A1 (en) 2019-02-06 2020-02-05 Textured silicon semiconductor processing chamber components

Publications (1)

Publication Number Publication Date
SG11202108622PA true SG11202108622PA (en) 2021-09-29

Family

ID=71947163

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202108622PA SG11202108622PA (en) 2019-02-06 2020-02-05 Textured silicon semiconductor processing chamber components

Country Status (7)

Country Link
US (1) US20220093370A1 (en)
JP (1) JP2022520744A (en)
KR (1) KR20210113692A (en)
CN (1) CN113661559A (en)
SG (1) SG11202108622PA (en)
TW (1) TW202105504A (en)
WO (1) WO2020163427A1 (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5054874B2 (en) * 1999-12-02 2012-10-24 ティーガル コーポレイション How to etch platinum in the reactor
US7618769B2 (en) * 2004-06-07 2009-11-17 Applied Materials, Inc. Textured chamber surface
FR2960562B1 (en) * 2010-05-31 2012-05-25 Saint Gobain Cristaux Et Detecteurs MONOCRYSTAL TEXTURE
US20120258280A1 (en) * 2011-04-11 2012-10-11 Applied Materials, Inc. Extended life textured chamber components and method for fabricating same
US8893702B2 (en) * 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses
US9437397B2 (en) * 2013-06-27 2016-09-06 Varian Semiconductor Equipment Associates, Inc. Textured silicon liners in substrate processing systems
TWI648427B (en) * 2013-07-17 2019-01-21 應用材料股份有限公司 Structure for improved gas activation for cross-flow type thermal cvd chamber
US10544519B2 (en) * 2017-08-25 2020-01-28 Aixtron Se Method and apparatus for surface preparation prior to epitaxial deposition

Also Published As

Publication number Publication date
JP2022520744A (en) 2022-04-01
KR20210113692A (en) 2021-09-16
CN113661559A (en) 2021-11-16
TW202105504A (en) 2021-02-01
WO2020163427A1 (en) 2020-08-13
US20220093370A1 (en) 2022-03-24

Similar Documents

Publication Publication Date Title
SG11202112225QA (en) Process chamber and semiconductor processing device
SG10201905294RA (en) Wafer processing method
SG10201904699RA (en) Wafer processing method
SG11202112769WA (en) Substrate processing chamber
SG11202103979UA (en) In situ protective coating of chamber components for semiconductor processing
SG10201907085QA (en) Semiconductor substrate processing method
SG10201905935VA (en) Wafer processing method
SG10202006736YA (en) Wafer processing method
SG10202000576QA (en) Wafer processing method
IL283688B (en) Wafer level shim processing
SG10202004876YA (en) Wafer processing method
SG10201911116YA (en) Wafer processing method
SG10201912832SA (en) Wafer processing method
SG10201909522RA (en) Wafer processing method
SG10201906678TA (en) Wafer processing method
SG10201905936RA (en) Wafer processing method
SG10201904719TA (en) Wafer processing method
SG10202003482RA (en) Wafer processing method
SG10202002647RA (en) Wafer processing method
SG10202000574XA (en) Wafer processing method
SG10201910165QA (en) Wafer processing method
SG10201910032WA (en) Wafer processing method
GB201913356D0 (en) Wafer processing system
SG10201906896QA (en) Wafer processing method
SG10201906897SA (en) Wafer processing method