JP5040977B2 - 窒化物半導体基板、半導体装置およびそれらの製造方法 - Google Patents

窒化物半導体基板、半導体装置およびそれらの製造方法 Download PDF

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JP5040977B2
JP5040977B2 JP2009218890A JP2009218890A JP5040977B2 JP 5040977 B2 JP5040977 B2 JP 5040977B2 JP 2009218890 A JP2009218890 A JP 2009218890A JP 2009218890 A JP2009218890 A JP 2009218890A JP 5040977 B2 JP5040977 B2 JP 5040977B2
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nitride semiconductor
semiconductor substrate
plane
main surface
chamfered portion
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JP2011071180A (ja
JP2011071180A5 (https=
Inventor
さゆり 山口
直樹 松本
英則 三上
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2009218890A priority Critical patent/JP5040977B2/ja
Priority to TW099121576A priority patent/TWI550903B/zh
Priority to EP20100168041 priority patent/EP2302113A1/en
Priority to US12/833,145 priority patent/US8471365B2/en
Priority to CN2010102329617A priority patent/CN102034853A/zh
Publication of JP2011071180A publication Critical patent/JP2011071180A/ja
Publication of JP2011071180A5 publication Critical patent/JP2011071180A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP2009218890A 2009-09-24 2009-09-24 窒化物半導体基板、半導体装置およびそれらの製造方法 Active JP5040977B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009218890A JP5040977B2 (ja) 2009-09-24 2009-09-24 窒化物半導体基板、半導体装置およびそれらの製造方法
TW099121576A TWI550903B (zh) 2009-09-24 2010-06-30 氮化物半導體基板、半導體裝置及彼等之製造方法
EP20100168041 EP2302113A1 (en) 2009-09-24 2010-07-01 Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device
US12/833,145 US8471365B2 (en) 2009-09-24 2010-07-09 Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device
CN2010102329617A CN102034853A (zh) 2009-09-24 2010-07-16 氮化物半导体衬底、半导体器件及其制造方法
US13/895,924 US20130252401A1 (en) 2009-09-24 2013-05-16 Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009218890A JP5040977B2 (ja) 2009-09-24 2009-09-24 窒化物半導体基板、半導体装置およびそれらの製造方法

Publications (3)

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JP2011071180A JP2011071180A (ja) 2011-04-07
JP2011071180A5 JP2011071180A5 (https=) 2012-05-24
JP5040977B2 true JP5040977B2 (ja) 2012-10-03

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US (2) US8471365B2 (https=)
EP (1) EP2302113A1 (https=)
JP (1) JP5040977B2 (https=)
CN (1) CN102034853A (https=)
TW (1) TWI550903B (https=)

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JP5381581B2 (ja) * 2009-09-30 2014-01-08 住友電気工業株式会社 窒化ガリウム基板
JP6031733B2 (ja) * 2010-09-27 2016-11-24 住友電気工業株式会社 ＧａＮ結晶の製造方法
JP5808208B2 (ja) * 2011-09-15 2015-11-10 株式会社サイオクス 窒化物半導体基板の製造方法
US8471366B2 (en) * 2011-11-30 2013-06-25 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate
JP5451724B2 (ja) * 2011-12-08 2014-03-26 ソニー株式会社 半導体レーザ素子の製造方法
JP5982971B2 (ja) 2012-04-10 2016-08-31 住友電気工業株式会社 炭化珪素単結晶基板
CN103374754A (zh) * 2012-04-17 2013-10-30 鑫晶钻科技股份有限公司 蓝宝石材料及其制造方法
US9040421B2 (en) * 2013-05-03 2015-05-26 GlobalFoundries, Inc. Methods for fabricating integrated circuits with improved contact structures
JP5950070B1 (ja) * 2014-12-16 2016-07-13 三菱化学株式会社 ＧａＮ基板
TWI697941B (zh) * 2016-04-20 2020-07-01 晶元光電股份有限公司 基板晶圓以及ⅲ族氮化物半導體元件之製造方法
JP6851017B2 (ja) * 2016-05-18 2021-03-31 パナソニックＩｐマネジメント株式会社 デバイス及びその製造方法
CN107623028B (zh) * 2016-07-13 2021-02-19 环球晶圆股份有限公司 半导体基板及其加工方法
TWI626340B (zh) * 2016-07-13 2018-06-11 環球晶圓股份有限公司 半導體基板及其加工方法
JP6149988B2 (ja) * 2016-08-01 2017-06-21 住友電気工業株式会社 炭化珪素単結晶基板
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
TWI636165B (zh) * 2017-08-04 2018-09-21 財團法人工業技術研究院 磊晶晶圓
EP3474338B1 (en) * 2017-08-24 2020-12-23 Soko Kagaku Co., Ltd. Method for manufacturing nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element
JP7276644B2 (ja) * 2017-08-31 2023-05-18 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板
EP3943644A1 (en) * 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same
JP6978641B1 (ja) * 2020-09-17 2021-12-08 日本碍子株式会社 Ｉｉｉ族元素窒化物半導体基板
CN112820633B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 氮化镓层及其同质外延生长方法
US12224344B2 (en) * 2021-04-08 2025-02-11 Semiconductor Components Industries, Llc Method and system for control of sidewall orientation in vertical gallium nitride field effect transistors
WO2023276036A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 窒化ガリウム単結晶基板の製造方法および周期表第１３族元素窒化物単結晶基板の製造方法
DE112023000548T5 (de) * 2022-03-14 2024-10-31 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III und laminiertes Substrat
JP2023181727A (ja) * 2022-06-13 2023-12-25 株式会社ディスコ ウェーハの製造方法

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US5018574A (en) * 1989-11-15 1991-05-28 Atlantic Richfield Company Tubing conveyed wellbore fluid flow measurement apparatus
JPH04333820A (ja) 1991-05-10 1992-11-20 Sony Corp 二次元表示素子の特性評価装置および二次元表示素子の製造方法
JP4595198B2 (ja) * 2000-12-15 2010-12-08 ソニー株式会社 半導体発光素子及び半導体発光素子の製造方法
JP2002222746A (ja) * 2001-01-23 2002-08-09 Matsushita Electric Ind Co Ltd 窒化物半導体ウェーハ及びその製造方法
JP2002356398A (ja) * 2001-06-01 2002-12-13 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
JP2003077847A (ja) * 2001-09-06 2003-03-14 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
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JP3534115B1 (ja) 2003-04-02 2004-06-07 住友電気工業株式会社 エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
JP4232605B2 (ja) * 2003-10-30 2009-03-04 住友電気工業株式会社 窒化物半導体基板の製造方法と窒化物半導体基板
CN101043121A (zh) * 2006-03-22 2007-09-26 三洋电机株式会社 氮化物类半导体发光元件及其制造方法
US20070221932A1 (en) * 2006-03-22 2007-09-27 Sanyo Electric Co., Ltd. Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device
JP4928874B2 (ja) * 2006-08-31 2012-05-09 三洋電機株式会社 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子
JP4395812B2 (ja) * 2008-02-27 2010-01-13 住友電気工業株式会社 窒化物半導体ウエハ−加工方法
JP4333820B1 (ja) * 2009-01-19 2009-09-16 住友電気工業株式会社 化合物半導体基板

Also Published As

Publication number Publication date
EP2302113A1 (en) 2011-03-30
US20130252401A1 (en) 2013-09-26
US8471365B2 (en) 2013-06-25
US20110068434A1 (en) 2011-03-24
JP2011071180A (ja) 2011-04-07
TW201121096A (en) 2011-06-16
CN102034853A (zh) 2011-04-27
TWI550903B (zh) 2016-09-21

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