TWI550903B - 氮化物半導體基板、半導體裝置及彼等之製造方法 - Google Patents

氮化物半導體基板、半導體裝置及彼等之製造方法 Download PDF

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Publication number
TWI550903B
TWI550903B TW099121576A TW99121576A TWI550903B TW I550903 B TWI550903 B TW I550903B TW 099121576 A TW099121576 A TW 099121576A TW 99121576 A TW99121576 A TW 99121576A TW I550903 B TWI550903 B TW I550903B
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TW
Taiwan
Prior art keywords
nitride semiconductor
semiconductor substrate
substrate
plane
chamfered portion
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TW099121576A
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English (en)
Chinese (zh)
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TW201121096A (en
Inventor
山口小百合
松本直樹
三上英則
Original Assignee
住友電氣工業股份有限公司
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Publication of TW201121096A publication Critical patent/TW201121096A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
TW099121576A 2009-09-24 2010-06-30 氮化物半導體基板、半導體裝置及彼等之製造方法 TWI550903B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009218890A JP5040977B2 (ja) 2009-09-24 2009-09-24 窒化物半導体基板、半導体装置およびそれらの製造方法

Publications (2)

Publication Number Publication Date
TW201121096A TW201121096A (en) 2011-06-16
TWI550903B true TWI550903B (zh) 2016-09-21

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Family Applications (1)

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TW099121576A TWI550903B (zh) 2009-09-24 2010-06-30 氮化物半導體基板、半導體裝置及彼等之製造方法

Country Status (5)

Country Link
US (2) US8471365B2 (https=)
EP (1) EP2302113A1 (https=)
JP (1) JP5040977B2 (https=)
CN (1) CN102034853A (https=)
TW (1) TWI550903B (https=)

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JP5808208B2 (ja) * 2011-09-15 2015-11-10 株式会社サイオクス 窒化物半導体基板の製造方法
US8471366B2 (en) * 2011-11-30 2013-06-25 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate
JP5451724B2 (ja) * 2011-12-08 2014-03-26 ソニー株式会社 半導体レーザ素子の製造方法
JP5982971B2 (ja) 2012-04-10 2016-08-31 住友電気工業株式会社 炭化珪素単結晶基板
CN103374754A (zh) * 2012-04-17 2013-10-30 鑫晶钻科技股份有限公司 蓝宝石材料及其制造方法
US9040421B2 (en) * 2013-05-03 2015-05-26 GlobalFoundries, Inc. Methods for fabricating integrated circuits with improved contact structures
JP5950070B1 (ja) * 2014-12-16 2016-07-13 三菱化学株式会社 ＧａＮ基板
TWI697941B (zh) * 2016-04-20 2020-07-01 晶元光電股份有限公司 基板晶圓以及ⅲ族氮化物半導體元件之製造方法
JP6851017B2 (ja) * 2016-05-18 2021-03-31 パナソニックＩｐマネジメント株式会社 デバイス及びその製造方法
CN107623028B (zh) * 2016-07-13 2021-02-19 环球晶圆股份有限公司 半导体基板及其加工方法
TWI626340B (zh) * 2016-07-13 2018-06-11 環球晶圓股份有限公司 半導體基板及其加工方法
JP6149988B2 (ja) * 2016-08-01 2017-06-21 住友電気工業株式会社 炭化珪素単結晶基板
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
TWI636165B (zh) * 2017-08-04 2018-09-21 財團法人工業技術研究院 磊晶晶圓
EP3474338B1 (en) * 2017-08-24 2020-12-23 Soko Kagaku Co., Ltd. Method for manufacturing nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element
JP7276644B2 (ja) * 2017-08-31 2023-05-18 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板
EP3943644A1 (en) * 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same
JP6978641B1 (ja) * 2020-09-17 2021-12-08 日本碍子株式会社 Ｉｉｉ族元素窒化物半導体基板
CN112820633B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 氮化镓层及其同质外延生长方法
US12224344B2 (en) * 2021-04-08 2025-02-11 Semiconductor Components Industries, Llc Method and system for control of sidewall orientation in vertical gallium nitride field effect transistors
WO2023276036A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 窒化ガリウム単結晶基板の製造方法および周期表第１３族元素窒化物単結晶基板の製造方法
DE112023000548T5 (de) * 2022-03-14 2024-10-31 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III und laminiertes Substrat
JP2023181727A (ja) * 2022-06-13 2023-12-25 株式会社ディスコ ウェーハの製造方法

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JP4333820B1 (ja) * 2009-01-19 2009-09-16 住友電気工業株式会社 化合物半導体基板

Also Published As

Publication number Publication date
EP2302113A1 (en) 2011-03-30
US20130252401A1 (en) 2013-09-26
US8471365B2 (en) 2013-06-25
US20110068434A1 (en) 2011-03-24
JP2011071180A (ja) 2011-04-07
TW201121096A (en) 2011-06-16
JP5040977B2 (ja) 2012-10-03
CN102034853A (zh) 2011-04-27

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