JP5039920B2 - 改善された熱伝導率をもつ歪みシリコン材料を形成するための方法 - Google Patents

改善された熱伝導率をもつ歪みシリコン材料を形成するための方法 Download PDF

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JP5039920B2
JP5039920B2 JP2007524976A JP2007524976A JP5039920B2 JP 5039920 B2 JP5039920 B2 JP 5039920B2 JP 2007524976 A JP2007524976 A JP 2007524976A JP 2007524976 A JP2007524976 A JP 2007524976A JP 5039920 B2 JP5039920 B2 JP 5039920B2
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layer
sige
substrate
alloy
composite
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Japanese (ja)
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JP2008509562A (ja
JP2008509562A5 (https=
Inventor
ベデル、ステファン、ダブリュー
チェン、ホワジー
フォーゲル、キース
ミッチェル、ライアン・エム
サダナ、デベンドラ・ケー
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Recrystallisation Techniques (AREA)
JP2007524976A 2004-08-05 2005-08-04 改善された熱伝導率をもつ歪みシリコン材料を形成するための方法 Expired - Fee Related JP5039920B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/710,826 2004-08-05
US10/710,826 US7247546B2 (en) 2004-08-05 2004-08-05 Method of forming strained silicon materials with improved thermal conductivity
PCT/US2005/027691 WO2006017640A1 (en) 2004-08-05 2005-08-04 Method of forming strained silicon materials with improved thermal conductivity

Publications (3)

Publication Number Publication Date
JP2008509562A JP2008509562A (ja) 2008-03-27
JP2008509562A5 JP2008509562A5 (https=) 2008-07-17
JP5039920B2 true JP5039920B2 (ja) 2012-10-03

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JP2007524976A Expired - Fee Related JP5039920B2 (ja) 2004-08-05 2005-08-04 改善された熱伝導率をもつ歪みシリコン材料を形成するための方法

Country Status (7)

Country Link
US (1) US7247546B2 (https=)
EP (1) EP1790003A4 (https=)
JP (1) JP5039920B2 (https=)
KR (1) KR101063698B1 (https=)
CN (1) CN1993819B (https=)
TW (1) TWI377603B (https=)
WO (1) WO2006017640A1 (https=)

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US7586116B2 (en) 2003-06-26 2009-09-08 Mears Technologies, Inc. Semiconductor device having a semiconductor-on-insulator configuration and a superlattice
CA2650489A1 (en) * 2006-05-05 2007-11-15 Mears Technologies, Inc. Semiconductor device having a semiconductor-on-insulator configuration and a superlattice and associated methods
JP5004072B2 (ja) * 2006-05-17 2012-08-22 学校法人慶應義塾 イオン照射効果評価方法、プロセスシミュレータ及びデバイスシミュレータ
US7442599B2 (en) * 2006-09-15 2008-10-28 Sharp Laboratories Of America, Inc. Silicon/germanium superlattice thermal sensor
DE102007002744B4 (de) * 2007-01-18 2011-11-17 Infineon Technologies Austria Ag Halbleiterbauelement
US20090166770A1 (en) * 2008-01-02 2009-07-02 International Business Machines Corporation Method of fabricating gate electrode for gate of mosfet and structure thereof
US8779383B2 (en) * 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI386983B (zh) 2010-02-26 2013-02-21 尖端科技材料股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
CN102254954A (zh) * 2011-08-19 2011-11-23 中国科学院上海微系统与信息技术研究所 含有数字合金位错隔离层的大失配外延缓冲层结构及制备
CN102347267B (zh) * 2011-10-24 2013-06-19 中国科学院上海微系统与信息技术研究所 一种利用超晶格结构材料制备的高质量sgoi及其制备方法
US8518807B1 (en) 2012-06-22 2013-08-27 International Business Machines Corporation Radiation hardened SOI structure and method of making same
US20140220771A1 (en) * 2013-02-05 2014-08-07 National Tsing Hua University Worm memory device and process of manufacturing the same
US8993457B1 (en) * 2014-02-06 2015-03-31 Cypress Semiconductor Corporation Method of fabricating a charge-trapping gate stack using a CMOS process flow
US10168459B2 (en) * 2016-11-30 2019-01-01 Viavi Solutions Inc. Silicon-germanium based optical filter
US10322873B2 (en) * 2016-12-28 2019-06-18 Omachron Intellectual Property Inc. Dust and allergen control for surface cleaning apparatus
CN109950153B (zh) * 2019-03-08 2022-03-04 中国科学院微电子研究所 半导体结构与其制作方法
CN120958981A (zh) * 2023-04-11 2025-11-14 三菱电机株式会社 半导体受光元件以及半导体受光元件的制造方法

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JPH0319211A (ja) * 1989-06-15 1991-01-28 Fujitsu Ltd 化学気相成長装置
JPH04335519A (ja) * 1991-05-13 1992-11-24 Fujitsu Ltd 半導体結晶の製造方法
CA2062134C (en) * 1991-05-31 1997-03-25 Ibm Low Defect Densiry/Arbitrary Lattice Constant Heteroepitaxial Layers
KR0168348B1 (ko) * 1995-05-11 1999-02-01 김광호 Soi 기판의 제조방법
DE19714054A1 (de) * 1997-04-05 1998-10-08 Daimler Benz Ag SiGe-Photodetektor mit hohem Wirkungsgrad
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
US6940089B2 (en) * 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
US6867459B2 (en) * 2001-07-05 2005-03-15 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
JP2004039735A (ja) 2002-07-01 2004-02-05 Fujitsu Ltd 半導体基板及びその製造方法
US6841457B2 (en) * 2002-07-16 2005-01-11 International Business Machines Corporation Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion
ATE365382T1 (de) * 2002-11-29 2007-07-15 Max Planck Gesellschaft Halbleiterstruktur für infrarotbereich und herstellungsverfahren

Also Published As

Publication number Publication date
US20060027808A1 (en) 2006-02-09
JP2008509562A (ja) 2008-03-27
CN1993819A (zh) 2007-07-04
WO2006017640A1 (en) 2006-02-16
EP1790003A1 (en) 2007-05-30
KR101063698B1 (ko) 2011-09-07
TWI377603B (en) 2012-11-21
EP1790003A4 (en) 2011-01-12
WO2006017640B1 (en) 2006-04-27
CN1993819B (zh) 2011-07-20
US7247546B2 (en) 2007-07-24
TW200607007A (en) 2006-02-16
KR20070042987A (ko) 2007-04-24

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