ATE365382T1 - Halbleiterstruktur für infrarotbereich und herstellungsverfahren - Google Patents
Halbleiterstruktur für infrarotbereich und herstellungsverfahrenInfo
- Publication number
- ATE365382T1 ATE365382T1 AT02026698T AT02026698T ATE365382T1 AT E365382 T1 ATE365382 T1 AT E365382T1 AT 02026698 T AT02026698 T AT 02026698T AT 02026698 T AT02026698 T AT 02026698T AT E365382 T1 ATE365382 T1 AT E365382T1
- Authority
- AT
- Austria
- Prior art keywords
- active zone
- base layer
- semiconductor structure
- production process
- conductivity type
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000005253 cladding Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02026698A EP1424736B1 (de) | 2002-11-29 | 2002-11-29 | Halbleiterstruktur für Infrarotbereich und Herstellungsverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE365382T1 true ATE365382T1 (de) | 2007-07-15 |
Family
ID=32241315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02026698T ATE365382T1 (de) | 2002-11-29 | 2002-11-29 | Halbleiterstruktur für infrarotbereich und herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US7119358B2 (de) |
EP (1) | EP1424736B1 (de) |
AT (1) | ATE365382T1 (de) |
DE (1) | DE60220803T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004001823B3 (de) * | 2004-01-08 | 2005-09-01 | Humboldt-Universität Zu Berlin | Licht emittierende Halbleitervorrichtungen mit veränderbarer Emissionswellenlänge |
US7247546B2 (en) * | 2004-08-05 | 2007-07-24 | International Business Machines Corporation | Method of forming strained silicon materials with improved thermal conductivity |
FR2874285B1 (fr) * | 2004-08-13 | 2006-10-13 | Commissariat Energie Atomique | Procede de realisation d'empilements d'ilots de materiau semi-conducteur encapsules dans un autre materiau semi-conducteur |
US20060043395A1 (en) * | 2004-08-26 | 2006-03-02 | National Inst Of Adv Industrial Science And Tech | Semiconductor light-emitting element and method of producing the same |
WO2006125272A1 (en) * | 2005-05-27 | 2006-11-30 | Newsouth Innovations Pty Limited | Resonant defect enhancement of current transport in semiconducting superlattices |
US20070154637A1 (en) * | 2005-12-19 | 2007-07-05 | Rohm And Haas Electronic Materials Llc | Organometallic composition |
DE112011101530B4 (de) | 2010-04-30 | 2021-03-25 | Trustees Of Boston University | Verfahren zur Herstellung einer optischen Vorrichtung |
KR20140032342A (ko) * | 2010-10-11 | 2014-03-14 | 유디 홀딩스, 엘엘씨 | 초격자 양자우물 적외선 감지기 |
US8879598B2 (en) | 2011-08-11 | 2014-11-04 | Sensor Electronic Technology, Inc. | Emitting device with compositional and doping inhomogeneities in semiconductor layers |
US10411156B2 (en) | 2011-08-11 | 2019-09-10 | Sensor Electronic Technology, Inc. | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer |
US9385271B2 (en) | 2011-08-11 | 2016-07-05 | Sensor Electronic Technology, Inc. | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer |
US8787418B2 (en) | 2011-08-11 | 2014-07-22 | Sensor Electronic Technology, Inc. | Emitting device with compositional and doping inhomogeneities in semiconductor layers |
US9595634B2 (en) | 2011-08-11 | 2017-03-14 | Sensor Electronic Technology, Inc. | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer |
US8723189B1 (en) * | 2012-01-06 | 2014-05-13 | Trustees Of Boston University | Ultraviolet light emitting diode structures and methods of manufacturing the same |
DE102015108402B4 (de) | 2015-05-28 | 2021-03-18 | Infineon Technologies Ag | Halbleiterbauelemente, ein Fluidsensor und ein Verfahren zum Bilden eines Halbleiterbauelements |
KR102553841B1 (ko) | 2017-07-19 | 2023-07-10 | 삼성전자주식회사 | 광전 변환 소자, 광 센서 |
KR102629160B1 (ko) * | 2018-01-29 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 광학 디바이스 향상을 위한 습윤 층들 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4679061A (en) * | 1985-06-14 | 1987-07-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Superlattice photoconductor |
DE3852180T2 (de) * | 1987-12-23 | 1995-04-06 | British Telecomm | Halbleiterheterostruktur. |
US5198682A (en) * | 1991-11-12 | 1993-03-30 | Hughes Aircraft Company | Multiple quantum well superlattice infrared detector with graded conductive band |
US5399880A (en) * | 1993-08-10 | 1995-03-21 | At&T Corp. | Phototransistor with quantum well base structure |
US5917195A (en) * | 1995-02-17 | 1999-06-29 | B.A. Painter, Iii | Phonon resonator and method for its production |
US6403975B1 (en) | 1996-04-09 | 2002-06-11 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev | Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates |
US6154475A (en) * | 1997-12-04 | 2000-11-28 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon-based strain-symmetrized GE-SI quantum lasers |
FR2812763B1 (fr) * | 2000-08-04 | 2002-11-01 | St Microelectronics Sa | Formation de boites quantiques |
DE10207952A1 (de) | 2002-02-25 | 2003-09-04 | Max Planck Gesellschaft | Verfahren zur Erzeugung von porösem Material mit periodischer Porenanordnung |
US6621841B1 (en) * | 2002-04-23 | 2003-09-16 | The United States Of America As Represented By The Secretary Of The Air Force | Phonon-pumped semiconductor lasers |
-
2002
- 2002-11-29 AT AT02026698T patent/ATE365382T1/de not_active IP Right Cessation
- 2002-11-29 DE DE60220803T patent/DE60220803T2/de not_active Expired - Lifetime
- 2002-11-29 EP EP02026698A patent/EP1424736B1/de not_active Expired - Lifetime
-
2003
- 2003-11-25 US US10/723,285 patent/US7119358B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040140531A1 (en) | 2004-07-22 |
EP1424736B1 (de) | 2007-06-20 |
US7119358B2 (en) | 2006-10-10 |
DE60220803D1 (de) | 2007-08-02 |
EP1424736A1 (de) | 2004-06-02 |
DE60220803T2 (de) | 2008-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |