DE60335001D1 - Halbleiter-nanokristallheterostrukturen - Google Patents

Halbleiter-nanokristallheterostrukturen

Info

Publication number
DE60335001D1
DE60335001D1 DE60335001T DE60335001T DE60335001D1 DE 60335001 D1 DE60335001 D1 DE 60335001D1 DE 60335001 T DE60335001 T DE 60335001T DE 60335001 T DE60335001 T DE 60335001T DE 60335001 D1 DE60335001 D1 DE 60335001D1
Authority
DE
Germany
Prior art keywords
heteroflexible
structures
nano crystal
semiconductor nano
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335001T
Other languages
English (en)
Inventor
Sungjee Kim
Moungi G Bawendi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Application granted granted Critical
Publication of DE60335001D1 publication Critical patent/DE60335001D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/58Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances
    • G01N33/588Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances with semiconductor nanocrystal label, e.g. quantum dots
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881Chalcogenides
    • C09K11/883Chalcogenides with zinc or cadmium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605Products containing multiple oriented crystallites, e.g. columnar crystallites
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/024Group 12/16 materials
    • H01L21/02409Selenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/024Group 12/16 materials
    • H01L21/02411Tellurides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/0256Selenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02562Tellurides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • H01L21/02601Nanoparticles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669Nanowires or nanotubes
    • H01L29/0673Nanowires or nanotubes oriented parallel to a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/221Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
    • H01L29/225Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/773Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/773Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/773Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775Nanosized powder or flake, e.g. nanosized catalyst
    • Y10S977/777Metallic powder or flake
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/811Of specified metal oxide composition, e.g. conducting or semiconducting compositions such as ITO, ZnOx
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12014All metal or with adjacent metals having metal particles
    • Y10T428/12021All metal or with adjacent metals having metal particles having composition or density gradient or differential porosity
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12986Adjacent functionally defined components
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913Rod, strand, filament or fiber
    • Y10T428/2933Coated or with bond, impregnation or core
    • Y10T428/294Coated or with bond, impregnation or core including metal or compound thereof [excluding glass, ceramic and asbestos]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991Coated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31Surface property or characteristic of web, sheet or block
    • Y10T428/315Surface modified glass [e.g., tempered, strengthened, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Molecular Biology (AREA)
  • Biomedical Technology (AREA)
  • Hematology (AREA)
  • General Health & Medical Sciences (AREA)
  • Urology & Nephrology (AREA)
  • Immunology (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biotechnology (AREA)
  • Microbiology (AREA)
  • Mathematical Physics (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Biophysics (AREA)
  • Cell Biology (AREA)
  • Composite Materials (AREA)
  • Electromagnetism (AREA)
  • Luminescent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60335001T 2002-08-13 2003-08-12 Halbleiter-nanokristallheterostrukturen Expired - Lifetime DE60335001D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40272602P 2002-08-13 2002-08-13
PCT/US2003/025174 WO2004053929A2 (en) 2002-08-13 2003-08-12 Semiconductor nanocrystal heterostructures

Publications (1)

Publication Number Publication Date
DE60335001D1 true DE60335001D1 (de) 2010-12-30

Family

ID=32507577

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335001T Expired - Lifetime DE60335001D1 (de) 2002-08-13 2003-08-12 Halbleiter-nanokristallheterostrukturen

Country Status (8)

Country Link
US (4) US7390568B2 (de)
EP (2) EP2336409B1 (de)
JP (2) JP4931348B2 (de)
AT (1) ATE488625T1 (de)
AU (1) AU2003302316A1 (de)
CA (1) CA2495309C (de)
DE (1) DE60335001D1 (de)
WO (1) WO2004053929A2 (de)

Families Citing this family (124)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4931348B2 (ja) * 2002-08-13 2012-05-16 マサチューセッツ インスティテュート オブ テクノロジー 半導体ナノクリスタルヘテロ構造体
ATE512115T1 (de) * 2003-01-22 2011-06-15 Univ Arkansas Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür
US7229497B2 (en) * 2003-08-26 2007-06-12 Massachusetts Institute Of Technology Method of preparing nanocrystals
US7303628B2 (en) * 2004-03-23 2007-12-04 The Regents Of The University Of California Nanocrystals with linear and branched topology
WO2005101530A1 (en) 2004-04-19 2005-10-27 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7746681B2 (en) 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7742322B2 (en) * 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
GB0409877D0 (en) * 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
US20070045777A1 (en) * 2004-07-08 2007-03-01 Jennifer Gillies Micronized semiconductor nanocrystal complexes and methods of making and using same
US7316967B2 (en) * 2004-09-24 2008-01-08 Massachusetts Institute Of Technology Flow method and reactor for manufacturing noncrystals
US20060196375A1 (en) * 2004-10-22 2006-09-07 Seth Coe-Sullivan Method and system for transferring a patterned material
WO2007001438A2 (en) * 2004-10-29 2007-01-04 Molecular Probes, Inc. Functionalized fluorescent nanocrystals, and methods for their preparation and use
US9637682B2 (en) 2004-11-11 2017-05-02 Samsung Electronics Co., Ltd. Interfused nanocrystals and method of preparing the same
EP2292718A3 (de) * 2004-11-11 2011-06-22 Samsung Electronics Co., Ltd Zusammengewachsene Nanokristalle und Verfahren zu ihrer Herstellung
JP4565153B2 (ja) * 2004-11-19 2010-10-20 独立行政法人産業技術総合研究所 ナノ粒子の低温合成法
JP4538646B2 (ja) * 2004-11-22 2010-09-08 独立行政法人産業技術総合研究所 高効率蛍光体の製造方法
US8891575B2 (en) * 2004-11-30 2014-11-18 Massachusetts Institute Of Technology Optical feedback structures and methods of making
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
US8134175B2 (en) * 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
US7632428B2 (en) * 2005-04-25 2009-12-15 The Board Of Trustees Of The University Of Arkansas Doped semiconductor nanocrystals and methods of making same
US8845927B2 (en) * 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
US9297092B2 (en) 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
GB2429838B (en) * 2005-08-12 2011-03-09 Nanoco Technologies Ltd Nanoparticles
KR101159853B1 (ko) * 2005-09-12 2012-06-25 삼성전기주식회사 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정
GB0522027D0 (en) * 2005-10-28 2005-12-07 Nanoco Technologies Ltd Controlled preparation of nanoparticle materials
US7414294B2 (en) 2005-12-16 2008-08-19 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix
US7394094B2 (en) * 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
TWI273719B (en) * 2005-12-30 2007-02-11 Ind Tech Res Inst Nanocrystal and photovoltaics applying the same
US20090236563A1 (en) * 2006-01-27 2009-09-24 Konica Minolta Medical & Graphic, Inc. Nanosized Semiconductor Particle Having Core/Shell Structure and Manufacturing Method Thereof
JP5169222B2 (ja) * 2006-01-30 2013-03-27 コニカミノルタエムジー株式会社 三層型半導体ナノ粒子および三層型半導体ナノロッド
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
US20100132770A1 (en) * 2006-02-09 2010-06-03 Beatty Paul H J Device including semiconductor nanocrystals and a layer including a doped organic material and methods
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
EP2041478B1 (de) 2006-03-07 2014-08-06 QD Vision, Inc. Halbleiternanokristalle enthaltender artikel
WO2007112088A2 (en) * 2006-03-24 2007-10-04 Qd Vision, Inc. Hyperspectral imaging device
US20080038558A1 (en) * 2006-04-05 2008-02-14 Evident Technologies, Inc. I-iii-vi semiconductor nanocrystals, i-iii-vi water stable semiconductor nanocrystals, and methods of making same
WO2007117672A2 (en) 2006-04-07 2007-10-18 Qd Vision, Inc. Methods of depositing nanomaterial & methods of making a device
US8941299B2 (en) * 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US9212056B2 (en) 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
WO2007143227A2 (en) * 2006-06-10 2007-12-13 Qd Vision, Inc. Materials,thin films,optical filters, and devices including same
WO2008111947A1 (en) 2006-06-24 2008-09-18 Qd Vision, Inc. Methods and articles including nanomaterial
WO2008105792A2 (en) * 2006-06-24 2008-09-04 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
WO2008108798A2 (en) 2006-06-24 2008-09-12 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices
US8643058B2 (en) * 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
DE102006043119A1 (de) * 2006-09-08 2008-03-27 Bundesdruckerei Gmbh Sicherheits- und/oder Wertdokument mit einem Typ II Halbleiterkontaktsystem
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
WO2008085210A2 (en) * 2006-09-12 2008-07-17 Qd Vision, Inc. Electroluminescent display useful for displaying a predetermined pattern
JP5131195B2 (ja) * 2006-09-15 2013-01-30 コニカミノルタエムジー株式会社 半導体ナノ粒子とその製造方法
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008133660A2 (en) * 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US8563348B2 (en) * 2007-04-18 2013-10-22 Nanoco Technologies Ltd. Fabrication of electrically active films based on multiple layers
US20080264479A1 (en) 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
WO2008150352A2 (en) * 2007-05-17 2008-12-11 Los Alamos National Security, Llc Single exciton nanocrystal laser
WO2009014590A2 (en) 2007-06-25 2009-01-29 Qd Vision, Inc. Compositions and methods including depositing nanomaterial
WO2009002551A1 (en) * 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
JP2011508793A (ja) 2007-06-26 2011-03-17 マサチューセッツ インスティテュート オブ テクノロジー 半導体ナノクリスタルの制御された修飾
WO2009082523A2 (en) * 2007-09-26 2009-07-02 Massachusetts Institute Of Technology High-resolution 3d imaging of single semiconductor nanocrystals
US8784701B2 (en) 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
US9748422B2 (en) 2008-01-23 2017-08-29 Massachusetts Institute Of Technology Semiconductor nanocrystals
JP5749495B2 (ja) * 2008-02-25 2015-07-15 ナノコ テクノロジーズ リミテッド 半導体ナノ粒子キャッピング剤
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
KR101995371B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
US8865477B2 (en) * 2008-04-22 2014-10-21 Drexel University Water soluble nanocrystalline quantum dots capable of near infrared emissions
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
EP2297762B1 (de) 2008-05-06 2017-03-15 Samsung Electronics Co., Ltd. Halbleiter-beleuchtungsanordnungen mit quanteneingeschlossenen halbleiternanopartikeln
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US8765223B2 (en) * 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US8507040B2 (en) 2008-05-08 2013-08-13 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
CN102105554A (zh) * 2008-06-10 2011-06-22 阿肯色大学托管委员会 砷化铟纳米晶体及其制备方法
GB0813273D0 (en) * 2008-07-19 2008-08-27 Nanoco Technologies Ltd Method for producing aqueous compatible nanoparticles
GB0814458D0 (en) * 2008-08-07 2008-09-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
BRPI0918595A2 (pt) * 2008-09-03 2017-03-21 Univ Emory pontos quânticos, métodos de fabricação de pontos quânticos, e métodos de utilização pontos quânticos
US20110226995A1 (en) * 2008-10-03 2011-09-22 Life Technologies Corporation Compositions and methods for functionalizing or crosslinking ligands on nanoparticle surfaces
GB0820101D0 (en) * 2008-11-04 2008-12-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
GB0821122D0 (en) * 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
GB0901857D0 (en) * 2009-02-05 2009-03-11 Nanoco Technologies Ltd Encapsulated nanoparticles
US10173454B2 (en) * 2009-02-17 2019-01-08 Bundesdruckerei Gmbh Security and/or value document having a type II semiconductor contact system
WO2010129350A2 (en) 2009-04-28 2010-11-11 Qd Vision, Inc. Optical materials, optical, components, devices, and methods
CN105713599B (zh) 2009-08-14 2018-09-11 三星电子株式会社 发光器件、用于发光器件的光学元件、以及方法
GB0916700D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
GB0916699D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
EP3561514A1 (de) 2009-09-23 2019-10-30 Crystalplex Corporation Passivierte ii-vi halbleiternanopartikel
WO2011047385A1 (en) 2009-10-17 2011-04-21 Qd Vision, Inc. An optical, component, products including same, and methods for making same
CN102762690A (zh) 2009-11-16 2012-10-31 爱默蕾大学 晶格失配的核壳型量子点
US10202546B2 (en) 2010-03-23 2019-02-12 Massachusetts Institute Of Technology Ligands for semiconductor nanocrystals
US9759727B2 (en) * 2010-03-23 2017-09-12 Massachusetts Institute Of Technology Ligands for semiconductor nanocrystals
JP2013529372A (ja) * 2010-03-29 2013-07-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光変換器
GB201005601D0 (en) 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
CN102985359A (zh) * 2010-04-23 2013-03-20 普度研究基金会 基于超薄纳米线和基于纳米级异质结构的热电转换结构及其制备方法
US10174243B2 (en) 2010-08-24 2019-01-08 Massachusetts Institute Of Technology Highly luminescent semiconductor nanocrystals
US8399939B2 (en) 2010-12-03 2013-03-19 Massachusetts Institute Of Technology Color selective photodetector and methods of making
CN102104079B (zh) * 2010-12-21 2012-05-23 中国科学院理化技术研究所 一维ZnO/ZnS核壳结构纳米阵列以及单晶ZnS纳米管阵列的制备方法
CN102104078B (zh) * 2010-12-21 2012-03-28 中国科学院理化技术研究所 ZnO/ZnS核壳结构一维纳米材料以及单晶ZnS纳米管的制备方法
WO2012126062A1 (en) * 2011-03-22 2012-09-27 Monash University Catalysts and methods of use
WO2012177761A1 (en) * 2011-06-20 2012-12-27 Crystalplex Corporation Stabilized nanocrystals
CN102263036A (zh) * 2011-07-01 2011-11-30 新疆大学 一种制备CdS/ZnS纳米线异质结的方法
US20130240026A1 (en) * 2011-09-02 2013-09-19 The California Institute Of Technology Photovoltaic semiconductive materials
FR2981790A1 (fr) * 2011-10-19 2013-04-26 Solarwell Procede de croissance en epaisseur de feuillets colloidaux et materiaux composes de feuillets
FR2981791A1 (fr) * 2011-10-19 2013-04-26 Solarwell Procede de croissance en epaisseur couche par couche de feuillets colloidaux et materiaux composes de feuillets
US10008631B2 (en) * 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
WO2013078247A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
US8937373B2 (en) * 2012-01-11 2015-01-20 Massachusetts Institute Of Technology Highly luminescent II-V semiconductor nanocrystals
CN104205368B (zh) 2012-02-05 2018-08-07 三星电子株式会社 半导体纳米晶体、其制备方法、组合物、以及产品
CN102800747A (zh) * 2012-07-11 2012-11-28 上海大学 一种ZnS包覆的ZnO纳米阵列核壳结构的制备方法
US20140060639A1 (en) 2012-08-31 2014-03-06 OneSun, LLC Copper oxide core/shell nanocrystals for use in photovoltaic cells
WO2014039472A1 (en) * 2012-09-04 2014-03-13 Massachusetts Institute Of Technology Solid-state cloaking for electrical charge carrier mobility control
US20150243837A1 (en) * 2013-03-15 2015-08-27 Moonsub Shim Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US9123638B2 (en) 2013-03-15 2015-09-01 Rohm And Haas Electronic Materials, Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US8937294B2 (en) 2013-03-15 2015-01-20 Rohm And Haas Electronic Materials Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
EP3971262B1 (de) 2014-05-29 2024-04-24 Tectus Corporation Dispergiersystem für quantenpunkte
KR102480086B1 (ko) * 2016-01-11 2022-12-23 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조방법
CA3024847A1 (en) 2016-05-19 2017-11-23 Crystalplex Corporation Cadmium-free quantum dots, tunable quantum dots, quantum dot containing polymer, articles, films, and 3d structure containing them and methods of making and using them
KR102556011B1 (ko) * 2018-01-23 2023-07-14 삼성디스플레이 주식회사 반도체 나노 결정과, 이를 포함하는 표시 장치 및 유기발광 표시 장치
CN109979643B (zh) * 2018-02-28 2020-05-08 华南师范大学 ZnO/ZnSe/CdSe/MoS2核壳结构薄膜电极的制备方法和应用
US10954440B2 (en) * 2018-03-09 2021-03-23 Samsung Electronics Co., Ltd. Quantum dots and devices including the same
US10456776B1 (en) * 2019-02-21 2019-10-29 King Saud University Method of fabricating a photocatalyst for water splitting
US11387423B2 (en) 2020-03-25 2022-07-12 Henan University Non-blinking quantum dot, preparation method thereof, and quantum dot-based light-emitting diode

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
JPS63178194A (ja) * 1987-01-19 1988-07-22 Tosoh Corp マイクロカプセル化アルカリ土類硫化物蛍光体
ATE131289T1 (de) * 1989-09-04 1995-12-15 British Telecomm Quantumfilm-strukturen.
US5021360A (en) * 1989-09-25 1991-06-04 Gte Laboratories Incorporated Method of farbicating highly lattice mismatched quantum well structures
US5081511A (en) * 1990-09-06 1992-01-14 Motorola, Inc. Heterojunction field effect transistor with monolayers in channel region
US5262357A (en) * 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
EP0613585A4 (de) * 1991-11-22 1995-06-21 Univ California Halbleitende nanokristalle, die durch selbstzusammengesetzte einzelschichten mit festen anorganischen oberflüchen verbunden sind.
US5515393A (en) * 1992-01-29 1996-05-07 Sony Corporation Semiconductor laser with ZnMgSSe cladding layers
JPH0817231B2 (ja) * 1992-01-29 1996-02-21 東京工業大学長 組織ドープ構造半導体装置
DE69328929T2 (de) * 1992-05-22 2000-11-02 Minnesota Mining & Mfg Ii-vi laserdioden mit durch atomlagen- und migrationsverstaerkte epitaxie aufgewachsenen quantum wells
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US6048616A (en) * 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
JPH0750448A (ja) 1993-08-04 1995-02-21 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
US5492080A (en) * 1993-12-27 1996-02-20 Matsushita Electric Industrial Co., Ltd. Crystal-growth method and semiconductor device production method using the crystal-growth method
US5422489A (en) * 1994-01-24 1995-06-06 Bhargava; Rameshwar N. Light emitting device
US5448582A (en) * 1994-03-18 1995-09-05 Brown University Research Foundation Optical sources having a strongly scattering gain medium providing laser-like action
US5881886A (en) 1994-03-18 1999-03-16 Brown University Research Foundation Optically-based methods and apparatus for sorting garments and other textiles
US5434878A (en) * 1994-03-18 1995-07-18 Brown University Research Foundation Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers
GB2318666B (en) 1994-04-25 1998-07-15 Univ Hertfordshire Coded items for labelling objects
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US5449260A (en) * 1994-06-10 1995-09-12 Whittle; Weldon M. Tamper-evident bolt
US5677545A (en) * 1994-09-12 1997-10-14 Motorola Organic light emitting diodes with molecular alignment and method of fabrication
WO1996014206A1 (en) * 1994-11-08 1996-05-17 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
US5541948A (en) * 1994-11-28 1996-07-30 The Regents Of The University Of California Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers
US5985353A (en) * 1994-12-01 1999-11-16 University Of Massachusetts Lowell Biomolecular synthesis of quantum dot composites
US5585640A (en) * 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
GB9518910D0 (en) * 1995-09-15 1995-11-15 Imperial College Process
US6323989B1 (en) * 1996-07-19 2001-11-27 E Ink Corporation Electrophoretic displays using nanoparticles
EP1818417B1 (de) 1996-07-29 2014-02-12 Nanosphere, Inc. Nanopartikel mit angehängten Oligonukleotiden und ihre Verwendungen
US5908608A (en) 1996-11-08 1999-06-01 Spectra Science Corporation Synthesis of metal chalcogenide quantum
US5939021A (en) 1997-01-23 1999-08-17 Hansen; W. Peter Homogeneous binding assay
WO1998036376A1 (en) 1997-02-18 1998-08-20 Spectra Science Corporation Field activated security thread including polymer dispersed liquid crystal
AUPP004497A0 (en) * 1997-10-28 1997-11-20 University Of Melbourne, The Stabilized particles
US6607829B1 (en) * 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6322901B1 (en) * 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US5985173A (en) * 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
US5990479A (en) * 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6139585A (en) * 1998-03-11 2000-10-31 Depuy Orthopaedics, Inc. Bioactive ceramic coating and method
US6251303B1 (en) * 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
JP2000104058A (ja) * 1998-09-28 2000-04-11 Sony Corp 発光体の製造方法
US6332901B1 (en) * 1998-10-12 2001-12-25 Toyota Jidosha Kabushiki Kaisha Carbon monoxide reducing device for reducing carbon monoxide in a reformate gas
US6114038A (en) * 1998-11-10 2000-09-05 Biocrystal Ltd. Functionalized nanocrystals and their use in detection systems
WO2000028598A1 (en) * 1998-11-10 2000-05-18 Biocrystal Limited Methods for identification and verification
US6592842B2 (en) * 1999-10-01 2003-07-15 Battelle Memorial Institute Nanocrystalline heterojunction materials
JP2003531477A (ja) * 2000-03-14 2003-10-21 マサチューセッツ インスティテュート オブ テクノロジー 光学増幅器およびレーザー
JP2002020740A (ja) * 2000-05-01 2002-01-23 Mitsubishi Chemicals Corp 超分岐構造配位子を有する半導体結晶超微粒子
IL138471A0 (en) * 2000-09-14 2001-10-31 Yissum Res Dev Co Novel semiconductor materials and their uses
ATE491230T1 (de) 2000-10-04 2010-12-15 Univ Arkansas Synthese von kolloidalen metall chalcogenide nanokristallen
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
EP2273552A3 (de) * 2001-03-30 2013-04-10 The Regents of the University of California Verfahren zur herstellung nanostrukturen und nanodrähten und durch diese verfahren hergestellte anordnungen
CA2453450A1 (en) * 2001-07-20 2003-11-06 Quantum Dot Corporation Luminescent nanoparticles and methods for their preparation
JP4931348B2 (ja) * 2002-08-13 2012-05-16 マサチューセッツ インスティテュート オブ テクノロジー 半導体ナノクリスタルヘテロ構造体
US7253452B2 (en) * 2004-03-08 2007-08-07 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystal materials
US7394094B2 (en) * 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
US7807265B2 (en) * 2006-05-12 2010-10-05 University Of Central Florida Research Foundation, Inc. Partially passivated quantum dots, process for making, and sensors therefrom

Also Published As

Publication number Publication date
WO2004053929A2 (en) 2004-06-24
US20110012061A1 (en) 2011-01-20
JP4931348B2 (ja) 2012-05-16
US8277942B2 (en) 2012-10-02
EP2336409A3 (de) 2011-11-02
JP2012102011A (ja) 2012-05-31
US20040110002A1 (en) 2004-06-10
EP2336409A2 (de) 2011-06-22
US9410959B2 (en) 2016-08-09
CA2495309C (en) 2011-11-08
US20090301564A1 (en) 2009-12-10
ATE488625T1 (de) 2010-12-15
EP1537263A2 (de) 2005-06-08
US20120319054A1 (en) 2012-12-20
EP2336409B1 (de) 2023-05-10
WO2004053929A3 (en) 2005-01-27
JP2006508012A (ja) 2006-03-09
US7825405B2 (en) 2010-11-02
CA2495309A1 (en) 2004-06-24
EP1537263A4 (de) 2008-07-02
US7390568B2 (en) 2008-06-24
AU2003302316A8 (en) 2004-06-30
AU2003302316A1 (en) 2004-06-30
EP1537263B1 (de) 2010-11-17

Similar Documents

Publication Publication Date Title
DE60335001D1 (de) Halbleiter-nanokristallheterostrukturen
WO2008063658A3 (en) Semiconductor nanocrystals and compositions and devices including same
SG131773A1 (en) Method of dividing a non-metal substrate
ATE529237T1 (de) Kapillarbedrucktechnik
ATE512465T1 (de) Verspannte halbleiter-einrichtungsstrukturen mit granularem halbleitermaterial
WO2007120255A3 (en) Semiconductor nanocrystal heterostructures
DE50210313D1 (de) Amphotere sterole und deren verwendung
DE60328407D1 (de) Wässrige siliciumdioxiddispersion
WO2006099171A3 (en) NOVEL GeSiSn-BASED COMPOUNDS, TEMPLATES, AND SEMICONDUCTOR STRUCTURES
ID21598A (id) Substrat semikonduktor dan piranti semikonduktor dengan film tipis, metoda pembuatannya, dan peralatan oksidasi anoda
ATE341101T1 (de) Phasenwechselspeicher und dessen herstellungsverfahren
WO2005017951A3 (en) Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods
DE60227840D1 (de) Nanokristlallstrukturen
WO2005104744A3 (en) Method for forming structures using an encapsulated adhesive material
ATE489730T1 (de) Elektronisches bauteil
WO2007047523A3 (en) System and method for positioning and synthesizing of nanostructures
WO2006001001A3 (en) An electroluminescent device for the production of ultra-violet light
ATE398534T1 (de) Sicherheitsmerkmal für aufzeichnungsmaterialien
DE602004031701D1 (de) Sprühbares Klebematerial zur Lasermarkierung von Halbleiterscheiben, Chips und Vorrichtungen
ATE325438T1 (de) Mehrfachstrahlantenne mit photonischem bandlückenmaterial
TW200520216A (en) Heterostructure resistor and method of forming the same
ATE390697T1 (de) Magnetische vorrichtungen unter verwendung von zusammengesetzten magnetischen elemente
DE60119538D1 (de) Herstellungsverfahren eines magnetkopfes mit planarer wicklung
ATE536263T1 (de) Verfahren zur plasmaverstärkten verbindung und durch plasmaverstärkte verbindung erzeugte verbundstrukturen
NO20053607D0 (no) Tekstilunderlag og pute laget av samme, samt ftmgangsmate for fremstilling av en pute