ATE131289T1 - Quantumfilm-strukturen. - Google Patents

Quantumfilm-strukturen.

Info

Publication number
ATE131289T1
ATE131289T1 AT90309677T AT90309677T ATE131289T1 AT E131289 T1 ATE131289 T1 AT E131289T1 AT 90309677 T AT90309677 T AT 90309677T AT 90309677 T AT90309677 T AT 90309677T AT E131289 T1 ATE131289 T1 AT E131289T1
Authority
AT
Austria
Prior art keywords
qws
film structures
built
quantum film
structures
Prior art date
Application number
AT90309677T
Other languages
English (en)
Inventor
Michael Graham Burt
Original Assignee
British Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB898919933A external-priority patent/GB8919933D0/en
Priority claimed from GB898919989A external-priority patent/GB8919989D0/en
Application filed by British Telecomm filed Critical British Telecomm
Application granted granted Critical
Publication of ATE131289T1 publication Critical patent/ATE131289T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G02F1/0158—Blue-shift of the absorption band
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells
    • G02F1/01758—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells with an asymmetric well profile, e.g. asymmetrically stepped quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3556—Semiconductor materials, e.g. quantum wells
AT90309677T 1989-09-04 1990-09-04 Quantumfilm-strukturen. ATE131289T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB898919933A GB8919933D0 (en) 1989-09-04 1989-09-04 Quantum well structures
GB898919989A GB8919989D0 (en) 1989-09-05 1989-09-05 Quantum well structures

Publications (1)

Publication Number Publication Date
ATE131289T1 true ATE131289T1 (de) 1995-12-15

Family

ID=26295862

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90309677T ATE131289T1 (de) 1989-09-04 1990-09-04 Quantumfilm-strukturen.

Country Status (11)

Country Link
US (1) US5481397A (de)
EP (1) EP0416879B1 (de)
JP (1) JP2968335B2 (de)
KR (1) KR100192926B1 (de)
AT (1) ATE131289T1 (de)
AU (1) AU636396B2 (de)
CA (1) CA2065247C (de)
DE (1) DE69023994T2 (de)
ES (1) ES2080123T3 (de)
HK (1) HK142996A (de)
WO (1) WO1991003758A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2231969B (en) * 1989-05-12 1993-11-03 Stc Plc Optical modulator
JPH0713110A (ja) * 1993-06-25 1995-01-17 Mitsubishi Electric Corp 半導体光変調器
DE59502831D1 (de) * 1994-03-25 1998-08-20 Fraunhofer Ges Forschung Quantenschichtstruktur
GB9415643D0 (en) * 1994-08-03 1994-09-21 Northern Telecom Ltd Polarisation-insensitive optical modulators
JPH08316588A (ja) * 1995-05-23 1996-11-29 Furukawa Electric Co Ltd:The 歪量子井戸構造を有する半導体光素子
US5594750A (en) * 1995-06-06 1997-01-14 Hughes Aircraft Company Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates
GB2327164B (en) 1996-07-19 2000-09-06 British Telecomm Telecommunications System
US6593589B1 (en) 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
JP2002148575A (ja) * 2000-11-15 2002-05-22 Mitsubishi Electric Corp 光変調器および光変調器集積型レーザーダイオード
US7064740B2 (en) * 2001-11-09 2006-06-20 Sharp Laboratories Of America, Inc. Backlit display with improved dynamic range
ATE488625T1 (de) * 2002-08-13 2010-12-15 Massachusetts Inst Technology Halbleiter-nanokristallheterostrukturen
US7180066B2 (en) * 2004-11-24 2007-02-20 Chang-Hua Qiu Infrared detector composed of group III-V nitrides
US7180648B2 (en) * 2005-06-13 2007-02-20 Massachusetts Institute Of Technology Electro-absorption modulator device and methods for fabricating the same
US7394094B2 (en) * 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
US9733497B2 (en) * 2015-04-09 2017-08-15 Mitsubishi Electric Corporation Semiconductor optical modulator and optical module
US20220115838A1 (en) * 2020-10-14 2022-04-14 Excelitas Technologies Corp. Tunable VCSEL with Strain Compensated Semiconductor DBR

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103630A (ja) * 1981-07-01 1989-04-20 Kuraray Co Ltd 水性高分子分散液
GB8331298D0 (en) * 1983-11-23 1983-12-29 British Telecomm Optical devices
US4686550A (en) * 1984-12-04 1987-08-11 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction semiconductor devices having a doping interface dipole
JP2666844B2 (ja) * 1987-09-17 1997-10-22 日本電気株式会社 波長多重弁別型半導体受光素子
JP2584811B2 (ja) * 1988-01-14 1997-02-26 キヤノン株式会社 非線形光学素子
US5121181A (en) * 1989-01-31 1992-06-09 International Business Machines Corporation Resonant tunneling photodetector for long wavelength applications
US5008717A (en) * 1989-03-03 1991-04-16 At&T Bell Laboratories Semiconductor device including cascaded modulation-doped quantum well heterostructures

Also Published As

Publication number Publication date
KR100192926B1 (ko) 1999-06-15
US5481397A (en) 1996-01-02
CA2065247A1 (en) 1991-03-05
AU636396B2 (en) 1993-04-29
DE69023994T2 (de) 1996-08-01
ES2080123T3 (es) 1996-02-01
HK142996A (en) 1996-08-09
EP0416879A1 (de) 1991-03-13
WO1991003758A1 (en) 1991-03-21
JP2968335B2 (ja) 1999-10-25
AU6408390A (en) 1991-04-08
CA2065247C (en) 1998-12-01
KR927004182A (ko) 1992-12-19
JPH05502112A (ja) 1993-04-15
EP0416879B1 (de) 1995-12-06
DE69023994D1 (de) 1996-01-18

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