HK142996A - Quantum well structures - Google Patents

Quantum well structures

Info

Publication number
HK142996A
HK142996A HK142996A HK142996A HK142996A HK 142996 A HK142996 A HK 142996A HK 142996 A HK142996 A HK 142996A HK 142996 A HK142996 A HK 142996A HK 142996 A HK142996 A HK 142996A
Authority
HK
Hong Kong
Prior art keywords
qws
quantum well
well structures
built
structures
Prior art date
Application number
HK142996A
Other languages
English (en)
Inventor
Michael Graham Burt
Original Assignee
British Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB898919933A external-priority patent/GB8919933D0/en
Priority claimed from GB898919989A external-priority patent/GB8919989D0/en
Application filed by British Telecomm filed Critical British Telecomm
Publication of HK142996A publication Critical patent/HK142996A/xx

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G02F1/0158—Blue-shift of the absorption band
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells
    • G02F1/01758—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells with an asymmetric well profile, e.g. asymmetrically stepped quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3556—Semiconductor materials, e.g. quantum wells

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Supply And Distribution Of Alternating Current (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Led Devices (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Non-Flushing Toilets (AREA)
HK142996A 1989-09-04 1996-08-01 Quantum well structures HK142996A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB898919933A GB8919933D0 (en) 1989-09-04 1989-09-04 Quantum well structures
GB898919989A GB8919989D0 (en) 1989-09-05 1989-09-05 Quantum well structures

Publications (1)

Publication Number Publication Date
HK142996A true HK142996A (en) 1996-08-09

Family

ID=26295862

Family Applications (1)

Application Number Title Priority Date Filing Date
HK142996A HK142996A (en) 1989-09-04 1996-08-01 Quantum well structures

Country Status (11)

Country Link
US (1) US5481397A (de)
EP (1) EP0416879B1 (de)
JP (1) JP2968335B2 (de)
KR (1) KR100192926B1 (de)
AT (1) ATE131289T1 (de)
AU (1) AU636396B2 (de)
CA (1) CA2065247C (de)
DE (1) DE69023994T2 (de)
ES (1) ES2080123T3 (de)
HK (1) HK142996A (de)
WO (1) WO1991003758A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2231969B (en) * 1989-05-12 1993-11-03 Stc Plc Optical modulator
JPH0713110A (ja) * 1993-06-25 1995-01-17 Mitsubishi Electric Corp 半導体光変調器
DE19580250D2 (de) * 1994-03-25 1997-11-27 Fraunhofer Ges Forschung Quantenschichtstruktur
GB9415643D0 (en) * 1994-08-03 1994-09-21 Northern Telecom Ltd Polarisation-insensitive optical modulators
JPH08316588A (ja) * 1995-05-23 1996-11-29 Furukawa Electric Co Ltd:The 歪量子井戸構造を有する半導体光素子
US5594750A (en) * 1995-06-06 1997-01-14 Hughes Aircraft Company Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates
CN100393005C (zh) 1996-07-19 2008-06-04 内克斯特格网络公司 同时接收和调制光信号的电信系统
US6593589B1 (en) 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
JP2002148575A (ja) * 2000-11-15 2002-05-22 Mitsubishi Electric Corp 光変調器および光変調器集積型レーザーダイオード
US7064740B2 (en) * 2001-11-09 2006-06-20 Sharp Laboratories Of America, Inc. Backlit display with improved dynamic range
CA2495309C (en) 2002-08-13 2011-11-08 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
US7180066B2 (en) * 2004-11-24 2007-02-20 Chang-Hua Qiu Infrared detector composed of group III-V nitrides
US7180648B2 (en) * 2005-06-13 2007-02-20 Massachusetts Institute Of Technology Electro-absorption modulator device and methods for fabricating the same
US7394094B2 (en) * 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
US9733497B2 (en) * 2015-04-09 2017-08-15 Mitsubishi Electric Corporation Semiconductor optical modulator and optical module
CA3198832A1 (en) * 2020-10-14 2022-04-21 Excelitas Technologies Corp. Tunable vcsel with strain compensated semiconductor dbr

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103630A (ja) * 1981-07-01 1989-04-20 Kuraray Co Ltd 水性高分子分散液
GB8331298D0 (en) * 1983-11-23 1983-12-29 British Telecomm Optical devices
US4686550A (en) * 1984-12-04 1987-08-11 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction semiconductor devices having a doping interface dipole
JP2666844B2 (ja) * 1987-09-17 1997-10-22 日本電気株式会社 波長多重弁別型半導体受光素子
JP2584811B2 (ja) * 1988-01-14 1997-02-26 キヤノン株式会社 非線形光学素子
US5121181A (en) * 1989-01-31 1992-06-09 International Business Machines Corporation Resonant tunneling photodetector for long wavelength applications
US5008717A (en) * 1989-03-03 1991-04-16 At&T Bell Laboratories Semiconductor device including cascaded modulation-doped quantum well heterostructures

Also Published As

Publication number Publication date
WO1991003758A1 (en) 1991-03-21
ATE131289T1 (de) 1995-12-15
EP0416879B1 (de) 1995-12-06
DE69023994T2 (de) 1996-08-01
CA2065247C (en) 1998-12-01
AU636396B2 (en) 1993-04-29
JP2968335B2 (ja) 1999-10-25
CA2065247A1 (en) 1991-03-05
EP0416879A1 (de) 1991-03-13
AU6408390A (en) 1991-04-08
KR927004182A (ko) 1992-12-19
DE69023994D1 (de) 1996-01-18
KR100192926B1 (ko) 1999-06-15
ES2080123T3 (es) 1996-02-01
JPH05502112A (ja) 1993-04-15
US5481397A (en) 1996-01-02

Similar Documents

Publication Publication Date Title
HK142996A (en) Quantum well structures
EP0382122A3 (de) Sonnenschutzvorrichtung
AU7019991A (en) A black manganese/iron oxide pigment, a process for its production and its use
AU543578B2 (en) Magnetically coupled rotary pump
AU522653B2 (en) Pigment grade iron oxides
AU1845192A (en) A temperature-resistant black pigment, a process for its production and its use
AU517967B2 (en) Iron oxide red pigments
EP0372335A3 (en) Black pigment, process for preparing it and its use
AU517395B2 (en) Tumor antigen
CA2026535A1 (en) Microwave-absorbing material
GB2017415A (en) Omnidirectional multiple-band antenna
AU497806B2 (en) Iron oxide based pigment
USD242863S (en) Four element indoor television antenna
JPS5376183A (en) Production of pigment-attached fluorescent substance
JPS525856A (en) Process for dispersing a pigment in a synthetic resin
AU499591B2 (en) Producing graphitic agglomerates
JPS5356393A (en) Preparation of soy sauce
AU1901476A (en) Papermakers fabric
JPS5229838A (en) Method for manufacturing a fire- retardant synthetic resin containing surface-treated dowsonite as fillers
JPS52135582A (en) Red lamp
ZA805664B (en) Manufacture of 4-amino-5-chloro-1-phenylpyridaz-6-one
JPS51148486A (en) Rotary sample-base
SU634026A1 (ru) Пружинный крестообразный шарнир
JPS5335795A (en) Preparation of polyester
JPS5617354A (en) Reticle frame for semiconductor device

Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20090904