WO2005017951A3 - Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods - Google Patents

Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods

Info

Publication number
WO2005017951A3
WO2005017951A3 PCT/US2003/024245 US0324245W WO2005017951A3 WO 2005017951 A3 WO2005017951 A3 WO 2005017951A3 US 0324245 W US0324245 W US 0324245W WO 2005017951 A3 WO2005017951 A3 WO 2005017951A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
quantum
dots
dot
methods
fabrication
Prior art date
Application number
PCT/US2003/024245
Other languages
French (fr)
Other versions
WO2005017951A2 (en )
Inventor
Howard Wing Hoon Lee
Alan Hap Chin
William Matthew Pfenninger
Majid Keshavarz
Original Assignee
Ultradots Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/1225Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/3515All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/355Non-linear optics characterised by the materials used
    • G02F1/3556Semiconductor materials, e.g. quantum wells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122Single quantum well structures
    • H01L29/127Quantum box structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1602Diamond
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12097Ridge, rib or the like
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12145Switch
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12147Coupler
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12159Interferometer
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166Manufacturing methods
    • G02B2006/12195Tapering
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/3515All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G02F1/3517All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using an interferometer
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/3515All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G02F1/3521All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using a directional coupler
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/365Non-linear optics in an optical waveguide structure
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F2001/01791Quantum box or dot
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/21Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
    • G02F2001/217Multi mode interference type
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G02F2002/006All-optical wavelength conversion
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/32Photonic crystals
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/36Micro- or nanomaterials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • H01L21/02601Nanoparticles
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/34Materials of the light emitting region containing only elements of group IV of the periodic system

Abstract

The invention relates to quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods. In one embodiment, a quantum dot (104) comprises a core (106) including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell (108) surrounding the core. The quantum dot is substantially defect free such that the quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent.
PCT/US2003/024245 2001-08-02 2003-08-01 Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods WO2005017951A3 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US10/212,005 2002-08-02
US10/212,001 2002-08-02
US10212004 US6794265B2 (en) 2001-08-02 2002-08-02 Methods of forming quantum dots of Group IV semiconductor materials
US10212001 US20030066998A1 (en) 2001-08-02 2002-08-02 Quantum dots of Group IV semiconductor materials
US10212005 US6710366B1 (en) 2001-08-02 2002-08-02 Nanocomposite materials with engineered properties
US10/211,991 2002-08-02
US10/212,004 2002-08-02
US10211991 US6819845B2 (en) 2001-08-02 2002-08-02 Optical devices with engineered nonlinear nanocomposite materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005507867A JP2006513458A (en) 2002-08-02 2003-08-01 Nanocomposite materials with quantum dots, the quantum dots, the optical device having a quantum dot, and associated manufacturing method
EP20030816720 EP1547153A4 (en) 2002-08-02 2003-08-01 Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods

Publications (2)

Publication Number Publication Date
WO2005017951A2 true WO2005017951A2 (en) 2005-02-24
WO2005017951A3 true true WO2005017951A3 (en) 2005-04-21

Family

ID=34199210

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/024245 WO2005017951A3 (en) 2001-08-02 2003-08-01 Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods

Country Status (3)

Country Link
EP (1) EP1547153A4 (en)
JP (1) JP2006513458A (en)
WO (1) WO2005017951A3 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100485511C (en) 2006-09-21 2009-05-06 上海大学 Evanescent wave optical fiber amplifier for quantum spot semiconductor nano-materials and manufacture method thereof
US8071359B2 (en) 1997-11-25 2011-12-06 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US9441156B2 (en) 1997-11-13 2016-09-13 Massachusetts Institute Of Technology Highly luminescent color-selective nanocrystalline materials

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2557139A3 (en) 2002-03-29 2014-04-09 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US7160613B2 (en) 2002-08-15 2007-01-09 Massachusetts Institute Of Technology Stabilized semiconductor nanocrystals
US7332211B1 (en) 2002-11-07 2008-02-19 Massachusetts Institute Of Technology Layered materials including nanoparticles
KR20070020183A (en) 2003-10-06 2007-02-20 매사추세츠 인스티튜트 오브 테크놀로지 Non-volatile memory device
US7645397B2 (en) * 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
WO2006137924A3 (en) 2004-11-03 2009-04-09 Massachusetts Inst Technology Light emitting device
US7799422B2 (en) 2004-11-03 2010-09-21 Massachusetts Institute Of Technology Absorbing film
US8891575B2 (en) 2004-11-30 2014-11-18 Massachusetts Institute Of Technology Optical feedback structures and methods of making
WO2007035657A1 (en) * 2005-09-16 2007-03-29 The Board Of Trustees Of The Leland Stanford Junior University Microresonator optical switch
JP2007197382A (en) * 2006-01-27 2007-08-09 Konica Minolta Medical & Graphic Inc Semiconductor nanoparticle
US8941299B2 (en) 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US8643058B2 (en) 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
KR100853087B1 (en) * 2007-04-26 2008-08-19 삼성전자주식회사 Nanocrystal, preparation method thereof and electronic devices comprising the same
KR101463011B1 (en) * 2007-05-31 2014-11-18 더 어드미니스트레이터즈 오브 더 튜래인 어듀케이셔널 훤드 Method of forming stable functionalized nanoparticles
KR101560846B1 (en) * 2007-06-25 2015-10-15 큐디 비젼, 인크. Compositions, optical component, system including an optical component, devices, and other products
DE102008035559A1 (en) 2008-07-30 2010-02-11 Rupert Goihl Light or voltage source has one or more luminophores in combination with electro-conductive particles, where light is generated from light source by electrically stimulated luminescence of luminophores
JP5495038B2 (en) * 2009-04-02 2014-05-21 独立行政法人物質・材料研究機構 Method for producing a fluorescing silicon nanoparticles
JP2010248325A (en) * 2009-04-14 2010-11-04 National Institute For Materials Science Sheet-like illuminant
JP5326767B2 (en) * 2009-04-20 2013-10-30 大日本印刷株式会社 The optical functional layer fine particles, an optical member and antiglare function layer for display
GB0916700D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
JP2011187646A (en) * 2010-03-08 2011-09-22 Seiko Epson Corp Optical converter and electronic apparatus including the same
KR101683270B1 (en) 2010-03-31 2016-12-21 삼성전자 주식회사 liquid crystal display Device including white light emitting diode
US8702277B2 (en) 2010-07-12 2014-04-22 Samsung Electronics Co., Ltd. White light emitting diode and liquid crystal display including the same
JP5830777B2 (en) * 2010-07-29 2015-12-09 国立大学法人九州工業大学 The resonator polarization element
JP5558395B2 (en) * 2011-03-24 2014-07-23 公益財団法人電磁材料研究所 Semiconductor nanocomposite structure thin film material and the manufacturing method thereof
WO2013028598A1 (en) * 2011-08-19 2013-02-28 William Marsh Rice University Anode battery materials and methods of making the same
JP2013095850A (en) * 2011-11-01 2013-05-20 National Institute For Materials Science Germanium nanoparticle fluorescent substance and method for producing the same
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
JP6039215B2 (en) * 2012-03-30 2016-12-07 京セラ株式会社 Solar cells
JP6055910B2 (en) * 2012-04-26 2016-12-27 キング アブドゥラー ユニバーシティ オブ サイエンス アンド テクノロジー Colloidal photoluminescence amorphous porous silicon, the method of manufacturing the colloidal photoluminescent amorphous porous silicon, and methods of using colloidal photoluminescence amorphous porous silicon
US20140079912A1 (en) 2012-09-17 2014-03-20 The Boeing Company Ir absorbing coatings comprisiing fluorinated nanoparticles
WO2014103609A1 (en) * 2012-12-26 2014-07-03 富士フイルム株式会社 Semiconductor film, production method for semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device
JP6136313B2 (en) * 2013-02-01 2017-05-31 国立研究開発法人物質・材料研究機構 Green-emitting germanium nanoparticles and a method of manufacturing the same
JP6270135B2 (en) * 2013-03-22 2018-01-31 国立研究開発法人物質・材料研究機構 High efficiency light emitting nanoparticles and optical amplifier using the same laser medium
JP6229228B2 (en) * 2013-08-09 2017-11-15 国立大学法人横浜国立大学 Optical control device and the quantum device using the same

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444143B1 (en) *
US5113473A (en) * 1989-11-24 1992-05-12 Matsushita Electric Industrial Co., Ltd. Nonlinear, optical thin-films and manufacturing method thereof
US5452123A (en) * 1992-12-30 1995-09-19 University Of Pittsburgh Of The Commonwealth System Of Higher Education Method of making an optically nonlinear switched optical device and related devices
US5474591A (en) * 1994-01-31 1995-12-12 Duke University Method of synthesizing III-V semiconductor nanocrystals
US5508829A (en) * 1992-12-18 1996-04-16 International Business Machines Corporation LTG AlGaAs non-linear optical material and devices fabricated therefrom
US5737102A (en) * 1992-12-30 1998-04-07 University Of Pittsburgh Of The Commonwealth System Of Higher Education Method of making an optically nonlinear switched optical device and related devices
US5909614A (en) * 1997-12-08 1999-06-01 Krivoshlykov; Sergei G. Method of improving performance of semiconductor light emitting device
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US6444143B2 (en) * 1998-09-18 2002-09-03 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US6585947B1 (en) * 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444143B1 (en) *
US5113473A (en) * 1989-11-24 1992-05-12 Matsushita Electric Industrial Co., Ltd. Nonlinear, optical thin-films and manufacturing method thereof
US5508829A (en) * 1992-12-18 1996-04-16 International Business Machines Corporation LTG AlGaAs non-linear optical material and devices fabricated therefrom
US5452123A (en) * 1992-12-30 1995-09-19 University Of Pittsburgh Of The Commonwealth System Of Higher Education Method of making an optically nonlinear switched optical device and related devices
US5737102A (en) * 1992-12-30 1998-04-07 University Of Pittsburgh Of The Commonwealth System Of Higher Education Method of making an optically nonlinear switched optical device and related devices
US5474591A (en) * 1994-01-31 1995-12-12 Duke University Method of synthesizing III-V semiconductor nanocrystals
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US5909614A (en) * 1997-12-08 1999-06-01 Krivoshlykov; Sergei G. Method of improving performance of semiconductor light emitting device
US6444143B2 (en) * 1998-09-18 2002-09-03 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US6585947B1 (en) * 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
LIU F. ET AL.: 'Enhancement of third-order nonlinearity of nanocrystalline GaSb embedded in silica films' MATERIALS SCIENCE AND ENGINEERING vol. B76, 2000, pages 161 - 164, XP004205040 *
RAKOVICH Y.P. ET AL.: 'Third-order optical nonlinearities in thin films of CdS nanocrystals' PHYS. STAT. SOL.(B) vol. 1, 2001, pages 319 - 324, XP008044812 *
See also references of EP1547153A2 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9441156B2 (en) 1997-11-13 2016-09-13 Massachusetts Institute Of Technology Highly luminescent color-selective nanocrystalline materials
US8071359B2 (en) 1997-11-25 2011-12-06 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US9530928B2 (en) 1997-11-25 2016-12-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
CN100485511C (en) 2006-09-21 2009-05-06 上海大学 Evanescent wave optical fiber amplifier for quantum spot semiconductor nano-materials and manufacture method thereof

Also Published As

Publication number Publication date Type
EP1547153A2 (en) 2005-06-29 application
WO2005017951A2 (en) 2005-02-24 application
EP1547153A4 (en) 2010-12-01 application
JP2006513458A (en) 2006-04-20 application

Similar Documents

Publication Publication Date Title
US20100283072A1 (en) Quantum dot-based light sheets useful for solid-state lighting
US20070012940A1 (en) Wavelength-convertible light emitting diode package
WO2003019681A1 (en) Thermoelectric transducing material, method for preparation thereof and thermoelectric transducer
JPH04197182A (en) Dna coding alkaline protease ya enzyme and production of alkaline protease ya using the dna
WO2003034508A1 (en) Light emitting device and method for manufacture thereof
USD465257S1 (en) Biofilm carrier element
JPH04236478A (en) Semiconductor light emitting element
WO2004022714A3 (en) Organic species that facilitate charge transfer to or from nanostructures
WO2008153130A1 (en) Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor
WO2003058726A1 (en) Semiconductor light-emitting device, light-emitting display, method for manufacturing semiconductor light-emitting device, and method for manufacturing light-emitting display
USD468198S1 (en) Front surface of package
JPH04313224A (en) Silicon-wafer abrasives
USD417820S (en) Drinking glass
Xia et al. Quantum confinement effect in silicon quantum-well layers
JPH0465314A (en) Long-shape silica sol and its production
JPH04234184A (en) Semiconductor laser
USD463725S1 (en) Hammer
Hayashi et al. Excitons in ZnSe-ZnS strained-layer superlattices
JP2012119481A (en) Semiconductor light-emitting device and manufacturing method thereof
USD489773S1 (en) Craft kit construction component—amorphous, asymmetric fin form
JPH04273491A (en) Superlattice structure, structure for confining holes or electrons using it and semiconductor light emitting element
USD478837S1 (en) Diamond
US8268699B2 (en) Wafer structures and wafer bonding methods
JPH0465828A (en) Carrier for drawing/drying pure water
WO2006108191A8 (en) Seventy five millimeter silicon carbide wafer with low warp, bow, and ttv

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2005507867

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2003816720

Country of ref document: EP

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 2003823291X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWP Wipo information: published in national office

Ref document number: 2003816720

Country of ref document: EP

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)