ATE448572T1 - Halbleiter-heterostruktur - Google Patents

Halbleiter-heterostruktur

Info

Publication number
ATE448572T1
ATE448572T1 AT07075739T AT07075739T ATE448572T1 AT E448572 T1 ATE448572 T1 AT E448572T1 AT 07075739 T AT07075739 T AT 07075739T AT 07075739 T AT07075739 T AT 07075739T AT E448572 T1 ATE448572 T1 AT E448572T1
Authority
AT
Austria
Prior art keywords
layer
emitter layer
emitter
electrons
holes
Prior art date
Application number
AT07075739T
Other languages
English (en)
Inventor
Maxim Odnoblyudov
Vladislav Bougrov
Original Assignee
Optogan Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optogan Oy filed Critical Optogan Oy
Application granted granted Critical
Publication of ATE448572T1 publication Critical patent/ATE448572T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Semiconductor Lasers (AREA)
AT07075739T 2004-09-17 2005-09-19 Halbleiter-heterostruktur ATE448572T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20041213A FI20041213A0 (fi) 2004-09-17 2004-09-17 Puolijohdeheterorakenne

Publications (1)

Publication Number Publication Date
ATE448572T1 true ATE448572T1 (de) 2009-11-15

Family

ID=33041546

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07075739T ATE448572T1 (de) 2004-09-17 2005-09-19 Halbleiter-heterostruktur

Country Status (12)

Country Link
US (1) US8053755B2 (de)
EP (2) EP1794815B1 (de)
JP (1) JP4961346B2 (de)
KR (1) KR101225675B1 (de)
CN (1) CN100470858C (de)
AT (1) ATE448572T1 (de)
DE (1) DE602005017676D1 (de)
FI (2) FI20041213A0 (de)
HK (1) HK1110147A1 (de)
RU (2) RU2376680C2 (de)
TW (1) TWI429153B (de)
WO (1) WO2006030064A1 (de)

Families Citing this family (13)

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KR100862497B1 (ko) * 2006-12-26 2008-10-08 삼성전기주식회사 질화물 반도체 소자
US8421058B2 (en) 2008-11-21 2013-04-16 Agency For Science, Technology And Research Light emitting diode structure having superlattice with reduced electron kinetic energy therein
FR2959657B1 (fr) * 2010-05-06 2012-06-22 Commissariat Energie Atomique Transducteur de variation temporelle de température, puce électronique incorporant ce transducteur et procédé de fabrication de cette puce
US8907322B2 (en) 2010-06-18 2014-12-09 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US9806226B2 (en) 2010-06-18 2017-10-31 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US8927959B2 (en) 2010-06-18 2015-01-06 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US8618575B2 (en) 2010-09-21 2013-12-31 Quantum Electro Opto Systems Sdn. Bhd. Light emitting and lasing semiconductor methods and devices
KR101836122B1 (ko) * 2011-08-24 2018-04-19 엘지이노텍 주식회사 발광소자
US8754397B2 (en) * 2011-12-07 2014-06-17 Nano-Electronic And Photonic Devices And Circuits, Llc CNT-based electronic and photonic devices
FR3009894B1 (fr) * 2013-08-22 2016-12-30 Commissariat Energie Atomique Diode electroluminescente dont une zone active comporte des couches d'inn
RU2558264C1 (ru) * 2014-03-26 2015-07-27 Общество с ограниченной ответственностью "Солар Дотс" Полупроводниковая структура для фотопреобразующего и светоизлучающего устройств
CN107578768B (zh) * 2017-08-31 2020-06-16 广东科学技术职业学院 基于声子晶体异质结的声波二极管
US11264238B2 (en) 2017-12-05 2022-03-01 King Abdullah University Of Science And Technology Forming III nitride alloys

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US4122407A (en) * 1976-04-06 1978-10-24 International Business Machines Corporation Heterostructure junction light emitting or responding or modulating devices
JPH02211686A (ja) * 1989-02-13 1990-08-22 Mitsubishi Electric Corp 半導体レーザ
JP2539268B2 (ja) * 1989-07-12 1996-10-02 富士通株式会社 半導体装置
US5224114A (en) * 1990-11-11 1993-06-29 Canon Kabushiki Kaisha Semiconductor laser devices with a plurality of light emitting layers having different bands gaps and methods for driving the same
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
JP3425185B2 (ja) 1993-03-26 2003-07-07 日本オプネクスト株式会社 半導体素子
DE69636088T2 (de) * 1995-11-06 2006-11-23 Nichia Corp., Anan Halbleitervorrichtung aus einer Nitridverbindung
JPH1022524A (ja) * 1996-07-02 1998-01-23 Omron Corp 半導体発光素子
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3375042B2 (ja) 1997-08-27 2003-02-10 日亜化学工業株式会社 窒化物半導体レーザ素子
JP3955367B2 (ja) * 1997-09-30 2007-08-08 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 光半導体素子およびその製造方法
JP4045639B2 (ja) * 1997-10-24 2008-02-13 住友電気工業株式会社 半導体レーザおよび半導体発光素子
US5877509A (en) * 1997-11-14 1999-03-02 Stanford University Quantum well exciton-polariton light emitting diode
GB9912583D0 (en) * 1999-05-28 1999-07-28 Arima Optoelectronics Corp A light emitting diode having a two well system with asymmetric tunneling
JP2001102690A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 窒化物系半導体レーザ装置
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
US6504171B1 (en) 2000-01-24 2003-01-07 Lumileds Lighting, U.S., Llc Chirped multi-well active region LED
US6764888B2 (en) * 2000-09-27 2004-07-20 Sensor Electronic Technology, Inc. Method of producing nitride-based heterostructure devices
US6534797B1 (en) * 2000-11-03 2003-03-18 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
US6955933B2 (en) * 2001-07-24 2005-10-18 Lumileds Lighting U.S., Llc Light emitting diodes with graded composition active regions
TW550839B (en) 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof
CN1236535C (zh) * 2001-11-05 2006-01-11 日亚化学工业株式会社 氮化物半导体元件
JP3569807B2 (ja) * 2002-01-21 2004-09-29 松下電器産業株式会社 窒化物半導体素子の製造方法
US6987286B2 (en) * 2002-08-02 2006-01-17 Massachusetts Institute Of Technology Yellow-green epitaxial transparent substrate-LEDs and lasers based on a strained-InGaP quantum well grown on an indirect bandgap substrate
US6859477B2 (en) * 2003-01-07 2005-02-22 University Of Texas Optoelectronic and electronic devices based on quantum dots having proximity-placed acceptor impurities, and methods therefor
US6878970B2 (en) * 2003-04-17 2005-04-12 Agilent Technologies, Inc. Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells
US6995389B2 (en) * 2003-06-18 2006-02-07 Lumileds Lighting, U.S., Llc Heterostructures for III-nitride light emitting devices
US7224041B1 (en) * 2003-09-30 2007-05-29 The Regents Of The University Of California Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate
US6943381B2 (en) * 2004-01-30 2005-09-13 Lumileds Lighting U.S., Llc III-nitride light-emitting devices with improved high-current efficiency

Also Published As

Publication number Publication date
KR20070062556A (ko) 2007-06-15
CN100470858C (zh) 2009-03-18
CN101057343A (zh) 2007-10-17
RU2007112506A (ru) 2008-10-27
RU2376680C2 (ru) 2009-12-20
KR101225675B1 (ko) 2013-01-23
RU2431218C2 (ru) 2011-10-10
JP4961346B2 (ja) 2012-06-27
EP1794815A4 (de) 2011-06-08
EP1903619A1 (de) 2008-03-26
FI20045387A0 (fi) 2004-10-13
EP1903619B1 (de) 2009-11-11
FI117529B (fi) 2006-11-15
US20080283818A1 (en) 2008-11-20
FI20041213A0 (fi) 2004-09-17
WO2006030064A1 (en) 2006-03-23
EP1794815B1 (de) 2012-05-30
TW200618430A (en) 2006-06-01
DE602005017676D1 (de) 2009-12-24
JP2008513987A (ja) 2008-05-01
TWI429153B (zh) 2014-03-01
FI20045387A (fi) 2006-03-18
EP1794815A1 (de) 2007-06-13
HK1110147A1 (en) 2008-07-04
RU2007132477A (ru) 2009-03-10
US8053755B2 (en) 2011-11-08

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