HK1110147A1 - Semiconductor heterostructure and light emitting diode comprising the semiconductor heterostructure - Google Patents

Semiconductor heterostructure and light emitting diode comprising the semiconductor heterostructure

Info

Publication number
HK1110147A1
HK1110147A1 HK08104331.2A HK08104331A HK1110147A1 HK 1110147 A1 HK1110147 A1 HK 1110147A1 HK 08104331 A HK08104331 A HK 08104331A HK 1110147 A1 HK1110147 A1 HK 1110147A1
Authority
HK
Hong Kong
Prior art keywords
layer
emitter layer
semiconductor heterostructure
emitter
light emitting
Prior art date
Application number
HK08104331.2A
Other languages
English (en)
Inventor
Maxim Odnoblyudov
Vladislav Bougrov
Original Assignee
Optogan Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optogan Oy filed Critical Optogan Oy
Publication of HK1110147A1 publication Critical patent/HK1110147A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Semiconductor Lasers (AREA)
HK08104331.2A 2004-09-17 2008-04-17 Semiconductor heterostructure and light emitting diode comprising the semiconductor heterostructure HK1110147A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20041213A FI20041213A0 (fi) 2004-09-17 2004-09-17 Puolijohdeheterorakenne
PCT/FI2005/000394 WO2006030064A1 (en) 2004-09-17 2005-09-19 Semiconductor heterostructure

Publications (1)

Publication Number Publication Date
HK1110147A1 true HK1110147A1 (en) 2008-07-04

Family

ID=33041546

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08104331.2A HK1110147A1 (en) 2004-09-17 2008-04-17 Semiconductor heterostructure and light emitting diode comprising the semiconductor heterostructure

Country Status (12)

Country Link
US (1) US8053755B2 (xx)
EP (2) EP1794815B1 (xx)
JP (1) JP4961346B2 (xx)
KR (1) KR101225675B1 (xx)
CN (1) CN100470858C (xx)
AT (1) ATE448572T1 (xx)
DE (1) DE602005017676D1 (xx)
FI (2) FI20041213A0 (xx)
HK (1) HK1110147A1 (xx)
RU (2) RU2376680C2 (xx)
TW (1) TWI429153B (xx)
WO (1) WO2006030064A1 (xx)

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US8421058B2 (en) 2008-11-21 2013-04-16 Agency For Science, Technology And Research Light emitting diode structure having superlattice with reduced electron kinetic energy therein
FR2959657B1 (fr) * 2010-05-06 2012-06-22 Commissariat Energie Atomique Transducteur de variation temporelle de température, puce électronique incorporant ce transducteur et procédé de fabrication de cette puce
US8927959B2 (en) 2010-06-18 2015-01-06 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US8907322B2 (en) 2010-06-18 2014-12-09 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US9806226B2 (en) 2010-06-18 2017-10-31 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US8618575B2 (en) 2010-09-21 2013-12-31 Quantum Electro Opto Systems Sdn. Bhd. Light emitting and lasing semiconductor methods and devices
KR101836122B1 (ko) * 2011-08-24 2018-04-19 엘지이노텍 주식회사 발광소자
US8754397B2 (en) * 2011-12-07 2014-06-17 Nano-Electronic And Photonic Devices And Circuits, Llc CNT-based electronic and photonic devices
FR3009894B1 (fr) 2013-08-22 2016-12-30 Commissariat Energie Atomique Diode electroluminescente dont une zone active comporte des couches d'inn
RU2558264C1 (ru) * 2014-03-26 2015-07-27 Общество с ограниченной ответственностью "Солар Дотс" Полупроводниковая структура для фотопреобразующего и светоизлучающего устройств
CN107578768B (zh) * 2017-08-31 2020-06-16 广东科学技术职业学院 基于声子晶体异质结的声波二极管
JP7039705B2 (ja) * 2017-12-05 2022-03-22 キング・アブドゥッラー・ユニバーシティ・オブ・サイエンス・アンド・テクノロジー Ｉｉｉ族窒化物合金の形成

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WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
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US5877509A (en) * 1997-11-14 1999-03-02 Stanford University Quantum well exciton-polariton light emitting diode
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Also Published As

Publication number Publication date
RU2376680C2 (ru) 2009-12-20
FI20045387A0 (fi) 2004-10-13
JP2008513987A (ja) 2008-05-01
ATE448572T1 (de) 2009-11-15
TW200618430A (en) 2006-06-01
CN101057343A (zh) 2007-10-17
FI117529B (fi) 2006-11-15
RU2007112506A (ru) 2008-10-27
US20080283818A1 (en) 2008-11-20
EP1794815B1 (en) 2012-05-30
EP1794815A1 (en) 2007-06-13
TWI429153B (zh) 2014-03-01
EP1794815A4 (en) 2011-06-08
FI20041213A0 (fi) 2004-09-17
KR20070062556A (ko) 2007-06-15
CN100470858C (zh) 2009-03-18
EP1903619B1 (en) 2009-11-11
EP1903619A1 (en) 2008-03-26
FI20045387A (fi) 2006-03-18
JP4961346B2 (ja) 2012-06-27
DE602005017676D1 (de) 2009-12-24
RU2431218C2 (ru) 2011-10-10
RU2007132477A (ru) 2009-03-10
WO2006030064A1 (en) 2006-03-23
KR101225675B1 (ko) 2013-01-23
US8053755B2 (en) 2011-11-08

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20130919