TWI377603B - Method of forming strained silicon materials with improved thermal conductivity - Google Patents

Method of forming strained silicon materials with improved thermal conductivity Download PDF

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Publication number
TWI377603B
TWI377603B TW094126263A TW94126263A TWI377603B TW I377603 B TWI377603 B TW I377603B TW 094126263 A TW094126263 A TW 094126263A TW 94126263 A TW94126263 A TW 94126263A TW I377603 B TWI377603 B TW I377603B
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TW
Taiwan
Prior art keywords
layer
sige
layers
substrate
digital alloy
Prior art date
Application number
TW094126263A
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English (en)
Chinese (zh)
Other versions
TW200607007A (en
Inventor
Stephen W Bedell
Huajie Chen
Keith Fogel
Ryan M Mitchell
Devendra K Sadana
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Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200607007A publication Critical patent/TW200607007A/zh
Application granted granted Critical
Publication of TWI377603B publication Critical patent/TWI377603B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Recrystallisation Techniques (AREA)
TW094126263A 2004-08-05 2005-08-02 Method of forming strained silicon materials with improved thermal conductivity TWI377603B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/710,826 US7247546B2 (en) 2004-08-05 2004-08-05 Method of forming strained silicon materials with improved thermal conductivity

Publications (2)

Publication Number Publication Date
TW200607007A TW200607007A (en) 2006-02-16
TWI377603B true TWI377603B (en) 2012-11-21

Family

ID=35756559

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126263A TWI377603B (en) 2004-08-05 2005-08-02 Method of forming strained silicon materials with improved thermal conductivity

Country Status (7)

Country Link
US (1) US7247546B2 (https=)
EP (1) EP1790003A4 (https=)
JP (1) JP5039920B2 (https=)
KR (1) KR101063698B1 (https=)
CN (1) CN1993819B (https=)
TW (1) TWI377603B (https=)
WO (1) WO2006017640A1 (https=)

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* Cited by examiner, † Cited by third party
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US7586116B2 (en) 2003-06-26 2009-09-08 Mears Technologies, Inc. Semiconductor device having a semiconductor-on-insulator configuration and a superlattice
CA2650489A1 (en) * 2006-05-05 2007-11-15 Mears Technologies, Inc. Semiconductor device having a semiconductor-on-insulator configuration and a superlattice and associated methods
JP5004072B2 (ja) * 2006-05-17 2012-08-22 学校法人慶應義塾 イオン照射効果評価方法、プロセスシミュレータ及びデバイスシミュレータ
US7442599B2 (en) * 2006-09-15 2008-10-28 Sharp Laboratories Of America, Inc. Silicon/germanium superlattice thermal sensor
DE102007002744B4 (de) * 2007-01-18 2011-11-17 Infineon Technologies Austria Ag Halbleiterbauelement
US20090166770A1 (en) * 2008-01-02 2009-07-02 International Business Machines Corporation Method of fabricating gate electrode for gate of mosfet and structure thereof
US8779383B2 (en) * 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI386983B (zh) 2010-02-26 2013-02-21 尖端科技材料股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
CN102254954A (zh) * 2011-08-19 2011-11-23 中国科学院上海微系统与信息技术研究所 含有数字合金位错隔离层的大失配外延缓冲层结构及制备
CN102347267B (zh) * 2011-10-24 2013-06-19 中国科学院上海微系统与信息技术研究所 一种利用超晶格结构材料制备的高质量sgoi及其制备方法
US8518807B1 (en) 2012-06-22 2013-08-27 International Business Machines Corporation Radiation hardened SOI structure and method of making same
US20140220771A1 (en) * 2013-02-05 2014-08-07 National Tsing Hua University Worm memory device and process of manufacturing the same
US8993457B1 (en) * 2014-02-06 2015-03-31 Cypress Semiconductor Corporation Method of fabricating a charge-trapping gate stack using a CMOS process flow
US10168459B2 (en) * 2016-11-30 2019-01-01 Viavi Solutions Inc. Silicon-germanium based optical filter
US10322873B2 (en) * 2016-12-28 2019-06-18 Omachron Intellectual Property Inc. Dust and allergen control for surface cleaning apparatus
CN109950153B (zh) * 2019-03-08 2022-03-04 中国科学院微电子研究所 半导体结构与其制作方法
CN120958981A (zh) * 2023-04-11 2025-11-14 三菱电机株式会社 半导体受光元件以及半导体受光元件的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319211A (ja) * 1989-06-15 1991-01-28 Fujitsu Ltd 化学気相成長装置
JPH04335519A (ja) * 1991-05-13 1992-11-24 Fujitsu Ltd 半導体結晶の製造方法
CA2062134C (en) * 1991-05-31 1997-03-25 Ibm Low Defect Densiry/Arbitrary Lattice Constant Heteroepitaxial Layers
KR0168348B1 (ko) * 1995-05-11 1999-02-01 김광호 Soi 기판의 제조방법
DE19714054A1 (de) * 1997-04-05 1998-10-08 Daimler Benz Ag SiGe-Photodetektor mit hohem Wirkungsgrad
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
US6940089B2 (en) * 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
US6867459B2 (en) * 2001-07-05 2005-03-15 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
JP2004039735A (ja) 2002-07-01 2004-02-05 Fujitsu Ltd 半導体基板及びその製造方法
US6841457B2 (en) * 2002-07-16 2005-01-11 International Business Machines Corporation Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion
ATE365382T1 (de) * 2002-11-29 2007-07-15 Max Planck Gesellschaft Halbleiterstruktur für infrarotbereich und herstellungsverfahren

Also Published As

Publication number Publication date
US20060027808A1 (en) 2006-02-09
JP2008509562A (ja) 2008-03-27
CN1993819A (zh) 2007-07-04
WO2006017640A1 (en) 2006-02-16
EP1790003A1 (en) 2007-05-30
KR101063698B1 (ko) 2011-09-07
JP5039920B2 (ja) 2012-10-03
EP1790003A4 (en) 2011-01-12
WO2006017640B1 (en) 2006-04-27
CN1993819B (zh) 2011-07-20
US7247546B2 (en) 2007-07-24
TW200607007A (en) 2006-02-16
KR20070042987A (ko) 2007-04-24

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