CN1993819B - 形成导热性改善的应变硅材料的方法 - Google Patents

形成导热性改善的应变硅材料的方法 Download PDF

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Publication number
CN1993819B
CN1993819B CN2005800260741A CN200580026074A CN1993819B CN 1993819 B CN1993819 B CN 1993819B CN 2005800260741 A CN2005800260741 A CN 2005800260741A CN 200580026074 A CN200580026074 A CN 200580026074A CN 1993819 B CN1993819 B CN 1993819B
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China
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layer
sige
substrate
alloy
thermal conductivity
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Expired - Fee Related
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CN2005800260741A
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English (en)
Chinese (zh)
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CN1993819A (zh
Inventor
斯蒂芬·W.·贝戴尔
陈华杰
基思·福格尔
赖安·M.·米切尔
德温德拉·K.·萨达纳
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Recrystallisation Techniques (AREA)
CN2005800260741A 2004-08-05 2005-08-04 形成导热性改善的应变硅材料的方法 Expired - Fee Related CN1993819B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/710,826 2004-08-05
US10/710,826 US7247546B2 (en) 2004-08-05 2004-08-05 Method of forming strained silicon materials with improved thermal conductivity
PCT/US2005/027691 WO2006017640A1 (en) 2004-08-05 2005-08-04 Method of forming strained silicon materials with improved thermal conductivity

Publications (2)

Publication Number Publication Date
CN1993819A CN1993819A (zh) 2007-07-04
CN1993819B true CN1993819B (zh) 2011-07-20

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CN2005800260741A Expired - Fee Related CN1993819B (zh) 2004-08-05 2005-08-04 形成导热性改善的应变硅材料的方法

Country Status (7)

Country Link
US (1) US7247546B2 (https=)
EP (1) EP1790003A4 (https=)
JP (1) JP5039920B2 (https=)
KR (1) KR101063698B1 (https=)
CN (1) CN1993819B (https=)
TW (1) TWI377603B (https=)
WO (1) WO2006017640A1 (https=)

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US7586116B2 (en) 2003-06-26 2009-09-08 Mears Technologies, Inc. Semiconductor device having a semiconductor-on-insulator configuration and a superlattice
CA2650489A1 (en) * 2006-05-05 2007-11-15 Mears Technologies, Inc. Semiconductor device having a semiconductor-on-insulator configuration and a superlattice and associated methods
JP5004072B2 (ja) * 2006-05-17 2012-08-22 学校法人慶應義塾 イオン照射効果評価方法、プロセスシミュレータ及びデバイスシミュレータ
US7442599B2 (en) * 2006-09-15 2008-10-28 Sharp Laboratories Of America, Inc. Silicon/germanium superlattice thermal sensor
DE102007002744B4 (de) * 2007-01-18 2011-11-17 Infineon Technologies Austria Ag Halbleiterbauelement
US20090166770A1 (en) * 2008-01-02 2009-07-02 International Business Machines Corporation Method of fabricating gate electrode for gate of mosfet and structure thereof
US8779383B2 (en) * 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI386983B (zh) 2010-02-26 2013-02-21 尖端科技材料股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
CN102254954A (zh) * 2011-08-19 2011-11-23 中国科学院上海微系统与信息技术研究所 含有数字合金位错隔离层的大失配外延缓冲层结构及制备
CN102347267B (zh) * 2011-10-24 2013-06-19 中国科学院上海微系统与信息技术研究所 一种利用超晶格结构材料制备的高质量sgoi及其制备方法
US8518807B1 (en) 2012-06-22 2013-08-27 International Business Machines Corporation Radiation hardened SOI structure and method of making same
US20140220771A1 (en) * 2013-02-05 2014-08-07 National Tsing Hua University Worm memory device and process of manufacturing the same
US8993457B1 (en) * 2014-02-06 2015-03-31 Cypress Semiconductor Corporation Method of fabricating a charge-trapping gate stack using a CMOS process flow
US10168459B2 (en) * 2016-11-30 2019-01-01 Viavi Solutions Inc. Silicon-germanium based optical filter
US10322873B2 (en) * 2016-12-28 2019-06-18 Omachron Intellectual Property Inc. Dust and allergen control for surface cleaning apparatus
CN109950153B (zh) * 2019-03-08 2022-03-04 中国科学院微电子研究所 半导体结构与其制作方法
CN120958981A (zh) * 2023-04-11 2025-11-14 三菱电机株式会社 半导体受光元件以及半导体受光元件的制造方法

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US6043517A (en) * 1997-04-05 2000-03-28 Daimler-Benz Ag SiGe photodetector with high efficiency
US20040004271A1 (en) * 2002-07-01 2004-01-08 Fujitsu Limited Semiconductor substrate and method for fabricating the same
CN1492476A (zh) * 2002-07-16 2004-04-28 �Ҵ���˾ 制造绝缘体上硅锗衬底材料的方法以及该衬底
US20040140531A1 (en) * 2002-11-29 2004-07-22 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V., A German Corporation Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure

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US6043517A (en) * 1997-04-05 2000-03-28 Daimler-Benz Ag SiGe photodetector with high efficiency
US20040004271A1 (en) * 2002-07-01 2004-01-08 Fujitsu Limited Semiconductor substrate and method for fabricating the same
CN1492476A (zh) * 2002-07-16 2004-04-28 �Ҵ���˾ 制造绝缘体上硅锗衬底材料的方法以及该衬底
US20040140531A1 (en) * 2002-11-29 2004-07-22 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V., A German Corporation Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure

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A C CHURCHILL.Optical Etalon Effectsand Electronic StructureinSilicon-Germanium 4 Monolayer: 4 Monolayer Strained Layer.Semicond.Sci.Technol6 1.1991,6(1),18-26. *
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Publication number Publication date
US20060027808A1 (en) 2006-02-09
JP2008509562A (ja) 2008-03-27
CN1993819A (zh) 2007-07-04
WO2006017640A1 (en) 2006-02-16
EP1790003A1 (en) 2007-05-30
KR101063698B1 (ko) 2011-09-07
JP5039920B2 (ja) 2012-10-03
TWI377603B (en) 2012-11-21
EP1790003A4 (en) 2011-01-12
WO2006017640B1 (en) 2006-04-27
US7247546B2 (en) 2007-07-24
TW200607007A (en) 2006-02-16
KR20070042987A (ko) 2007-04-24

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Granted publication date: 20110720