JP5032986B2 - 材料にドーピングするための方法およびドーピングされた材料 - Google Patents
材料にドーピングするための方法およびドーピングされた材料 Download PDFInfo
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- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- C23C16/45523—Pulsed gas flow or change of composition over time
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Description
(発明の詳細な説明)
AlX3、このときXは、F、Cl、Br、またはIである;
X3Al、すなわち有機金属化合物、このときXは、H、CH3、CH3CH2、(CH3)2CH2などである;
AlX3、このときXは、酸素または窒素から配位したリガンド(たとえば、エトキシド、イソプロポキシド、2,2,6,6-テトラメチルヘプタンジオン、アセチルアセトナート、またはN,N-ジアルキルアセトアミドナート)である。
ErX3、このときXは、F、Cl、Br、I、またはニトラートである;
Er(X)3またはEr(X)3Z、このときXは、酸素を介して配位したリガンド、たとえば、2,2,6,6-テトラメチルオクタンジオン、2,2,6,6-テトラメチルヘプタンジオン、またはアセチルアセトナート等の1種以上であり、Zは、たとえば、テトラグライム、ピリジン-N-オキシド、2,2'-ビピリジル、1,10-フェナントロリン、または対応する中性リガンドである;
X3ErまたはX3ErZ、このときXは、C5Z5(Z=HもしくはR)、これらの誘導体、または対応するη1-配位リガンド、η5-配位リガンド、もしくはη8-配位リガンドであり、Zは中性リガンドである;
ErX3、このときXは、窒素を介して配位したリガンド(たとえば、アルキルシリルアミド、またはN,N-ジアルキルアセトアミデナート)である。
AlCl3/H2O(100〜660℃);
AlCl3/Al(OEt)3またはAl(OiPr)3(300〜400℃);
AlCl3、Al(OEt)3、Al(OPr)3/種々のアルコール(300〜500℃);
(CH3)2AlCl/H2O(125〜500℃);
(CH3)3Al/H2O(80〜600℃);
(CH3)3Al/H2O2(室温〜450℃);
(CH3CH2)3Al/H2O(600〜750℃);
(CH3)3Al/Al(OiPr)3(300℃);
(CH3)2(C2H5)N:AlH3/O2プラズマ(100〜125℃)。
ErX3、このときXは、F、Cl、Br、I、またはニトラートである;
Er(X)3またはEr(X)3Z、このときXは、酸素を介して配位したリガンド、たとえば、2,3,6,6-テトラメチルオクタンジオン、2,2,6,6-テトラメチルヘプタンジオン、またはアセチルアセトナート等の1種以上であり、Zは、たとえば、テトラグライム、ピリジン-N-オキシド、2,2'-ビピリジル、1,10-フェナントロリン、または対応する中性リガンドである;
X3ErまたはX3ErZ、このときXは、C5Z5(Z=HもしくはR)、これらの誘導体、または対応するη1-配位リガンド、η5-配位リガンド、もしくはη8-配位リガンドであり、Zは中性リガンドである;
ErX3、このときXは、窒素を介して配位したリガンド(たとえば、アルキルシリルアミノ、またはN,N-ジアルキルアセトアミデナート)である。
最初の予備成形物:
多孔度: 58%
すす層の厚さ: 29μm
温度: 300℃
パルス時間 TMA+水+Er(thd3)+O3: 全て5分
対応するフラッシング時間: 5分
圧力: 2ミリバール
得られた濃度: Er/(Er+Al+Si)=0.038(モル/モル) Er/Al=1.28
Claims (26)
- ドーピングしようとするガラス材料にドーピングするための方法であって、ドーピングしようとするガラス材料は基礎材料を有し、
少なくとも1つのドーパント堆積層もしくはドーパント堆積層の一部を、ドーピングしようとするガラス材料の表面上に、および/またはドーピングしようとするガラス材料の一部の表面上に、原子層堆積法(ALD法)を使用して堆積させ、ドープされたガラス材料を形成し、ここでドーパント堆積層はドーパントを含んでおり、
ドープされたガラス材料を、ドーパント堆積層の初期構造を変化させるか、あるいは少なくとも部分的に破壊し、これによりドーパント堆積層のドーパントと基礎材料とが一緒になって新たな化合物材料を形成するようさらに処理することを特徴とする前記方法。 - ドーピングしようとするガラス材料が、光ファイバーもしくは平面光導波管の製造において使用される多孔質ガラス材料またはガラスブランクであることを特徴とする、請求項1に記載の方法。
- 多孔質ガラス材料またはガラスブランクが、CVD(化学蒸着)法、OVD(外付け蒸着)法、VAD(軸付け蒸着)法、MCVD(内付け蒸着)法、PCVD(プラズマ活性化化学蒸着)法、DND(ナノ粒子直接堆積)法、およびゾルゲル法のうちの1つを使用して製造されることを特徴とする、請求項2に記載の方法。
- 多孔質ガラス材料が、石英ガラス、リンガラス、フッ化物ガラス、および/または硫化物ガラスであることを特徴とする、請求項2又は3に記載の方法。
- 多孔質ガラス材料が、ゲルマニウム、リン、フッ素、ホウ素、スズ、および/またはチタンを含めた1種以上の材料で部分的もしくは完全にドーピングされることを特徴とする、請求項2〜4のいずれか一項に記載の方法。
- 少なくとも1つのドーパント堆積層を、多孔質ガラスブランクの表面上および/または多孔質ガラスブランクの一部の表面上に、原子層堆積法(ALD法)を使用して堆積させる前に少なくとも1つの多孔質ガラス材料層をガラス管等の中空ガラスブランクの内側表面上に、実質的に同じ装置においてMCVD法を使用して、中空ガラスブランクの少なくとも幾らかの部分がALD法の反応器として機能するように堆積させることを特徴とする、請求項2〜5のいずれか一項に記載の方法。
- ドーピングしようとするガラス材料の比表面積が1m2/gより大きいことを特徴とする、請求項1〜6のいずれか一項に記載の方法。
- ドーパント堆積層の少なくとも幾つかを、異なったドーパントを組み込んで堆積させることを特徴とする、請求項1〜7のいずれか一項に記載の方法。
- ドーパントで被覆された材料のさらなる加工処理が、機械的処理、化学的処理、又は放射線であることを特徴とする、請求項1〜8のいずれか一項に記載の方法。
- ドーピングしようとするガラス材料を放射線で処理することによって、および/または、ドーピングしようとするガラス材料の表面と、ドーピングしようとするガラス材料の表面上に活性基を形成する適切なガスもしくは液体とを反応させることによって、ドーピングしようとするガラス材料の表面上に反応性基を加えることを特徴とする、請求項1〜9のいずれか一項に記載の方
法。 - ドーピングしようとするガラス材料中の反応性基の数を調整することによって、ドーピングしようとするガラス材料の表面上のドーパント量を調整することを特徴とする、請求項10に記載の方法。
- 前記方法が、原子層堆積法の使用による層の堆積処理間に、ドーピングしようとするガラス材料の表面を不活性ガスでフラッシングすることをさらに含むことを特徴とする、請求項1〜11のいずれか一項に記載の方法。
- ドーピングしようとするガラス材料が支持体の表面上に存在することを特徴とする、請求項1〜12のいずれか一項に記載の方法。
- さらなる加工処理時において、ドーパントを、ドーピングしようとするガラス材料と共に溶解、拡散、または部分的もしくは完全に混合することを特徴とする、請求項1〜13のいずれか一項に記載の方法。
- さらなる加工処理時において、ドーパントが、ドーピングしようとするガラス材料の中間相の一部として残存することを特徴とする、請求項1〜14のいずれか一項に記載の方法。
- ドーピングしようとするガラス材料が複合材料または組成物であり、さらなる加工処理時において、ALD法を使用してもたらされたドーパントが拡散して、ドーピングしようとするガラス材料の異なった箇所に複合相を形成することを特徴とする、請求項1〜15のいずれか一項に記載の方法。
- ドーピングしようとするガラス材料の特性が、ドーパントの拡散、溶解、混合、または反応によって変わることを特徴とする、請求項1〜16のいずれか一項に記載の方法。
- ドーピングしようとするガラス材料の新たな特性が、変化した屈折率、吸収能、導電率および/若しくは熱伝導率、色、機械的耐久性、又は化学的耐久性であることを特徴とする、請求項1〜17のいずれか一項に記載の方法。
- ドーパントが、添加剤、助剤、充填剤、着色剤、または組成物であることを特徴とする、請求項1〜18のいずれか一項に記載の方法。
- ドーパントが、熱伝導性、光伝導性、もしくは導電性を付与する助剤、補強剤、可塑剤、顔料、または焼結助剤であることを特徴とする、請求項19に記載の方法。
- ドーピングしようとする材料が多孔質のガラス材料であるとき、前記多孔質ガラス材料が、エルビウム、イッテルビウム、ネオジム、およびセリウム等の希土類金属;ホウ素やアルミニウム等のホウ素族の試剤;ゲルマニウム、スズ、およびケイ素等の炭素族の試剤;リン等の窒素族の試剤;フッ素等のフッ素族の試剤;および/または銀;を含む1種以上の試剤で部分的もしくは完全にドーピングされることを特徴とする、請求項2〜7のいずれか一項に記載の方法。
- ガラスブランクのクラッド、ガラスブランクのコア、光伝導体、表面ドーピングの構造体、または複合材料の構造体を製造する際に使用されることを特徴とする、請求項1〜21のいずれか一項に記載の方法。
- 原子層堆積法(ALD法)を使用することによって、ドーピングしようとするガラス材料の表面上および/またはドーピングしようとするガラス材料の一部の表面上に、少なくとも1つのドーパント堆積層もしくはその一部をもたらし、ドープされたガラス材料を形成するためのALD法用の手段を含む、ドーピングしようとするガラス材料にドーピングするための装置であって、ドーピングしようとするガラス材料は基礎材料を有しており、ドーパント堆積層はドーパントを含んでおり、ドープされたガラス材料を、ドーパント堆積層の初期構造を変化させるか、あるいは少なくとも部分的に破壊し、これによりドーパント堆積層のドーパントと基礎材料とが一緒になって新たな化合物材料を形成するようさらに処理するための手段を含むことを特徴とする前記装置。
- MCVD法のための手段をさらに含むことを特徴とする、請求項23に記載の装置。
- MCVD法とALD法のための手段が、少なくとも1つのドーパント堆積層を、ドーピングしようとする多孔質ガラスブランクの表面上および/または多孔質ガラスブランクの一部の表面上に、ALD法を使用して堆積させる前に、少なくとも1つの多孔質ガラス材料層をガラス管等の中空ガラスブランクの内側表面上に、MCVD法手段を使用して堆積させるように配置されていることを特徴とする、請求項24に記載の装置。
- 中空ガラスブランクの少なくとも幾らかの部分がALD法における反応器として機能することを特徴とする、請求項25に記載の装置。
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FI20045490A FI122699B (fi) | 2004-12-17 | 2004-12-17 | Menetelmä materiaalin seostamiseksi |
FI20045490 | 2004-12-17 | ||
FI20055166A FI119058B (fi) | 2004-08-02 | 2005-04-12 | Menetelmä lasimateriaalin valmistamiseksi |
FI20055166 | 2005-04-12 | ||
PCT/FI2005/050234 WO2006000643A1 (en) | 2004-06-24 | 2005-06-23 | Method for doping material and doped material |
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US7544398B1 (en) * | 2005-04-26 | 2009-06-09 | The Regents Of The Univesity Of California | Controlled nano-doping of ultra thin films |
US20100107693A1 (en) * | 2007-02-12 | 2010-05-06 | Beneq Oy | Method for doping glass |
JP2009023898A (ja) * | 2007-06-20 | 2009-02-05 | Asahi Glass Co Ltd | 合成石英ガラス体、その製造方法、光学素子および光学装置 |
FI122941B (fi) | 2008-06-12 | 2012-09-14 | Beneq Oy | Sovitelma ALD-reaktorin yhteydessä |
GB2467928A (en) * | 2009-02-19 | 2010-08-25 | Amit Kumar Roy | Inorganic Fibre Coating by Atomic Layer Deposition |
US8951615B2 (en) * | 2011-02-16 | 2015-02-10 | Uchicago Argonne, Llc | Doping control by ALD surface functionalization |
KR101489733B1 (ko) * | 2013-01-02 | 2015-02-06 | 인하대학교 산학협력단 | 은-알루미늄 복합 나노입자 및 이의 제조방법 |
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