JP5025236B2 - 露光装置及び方法、並びに、デバイス製造方法 - Google Patents

露光装置及び方法、並びに、デバイス製造方法 Download PDF

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Publication number
JP5025236B2
JP5025236B2 JP2006322526A JP2006322526A JP5025236B2 JP 5025236 B2 JP5025236 B2 JP 5025236B2 JP 2006322526 A JP2006322526 A JP 2006322526A JP 2006322526 A JP2006322526 A JP 2006322526A JP 5025236 B2 JP5025236 B2 JP 5025236B2
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JP
Japan
Prior art keywords
light
exposure
optical system
light amount
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006322526A
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English (en)
Japanese (ja)
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JP2008140795A (ja
JP2008140795A5 (https=
Inventor
堅一郎 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006322526A priority Critical patent/JP5025236B2/ja
Priority to TW096143203A priority patent/TWI397780B/zh
Priority to US11/943,885 priority patent/US7936442B2/en
Priority to KR1020070122385A priority patent/KR100913271B1/ko
Publication of JP2008140795A publication Critical patent/JP2008140795A/ja
Publication of JP2008140795A5 publication Critical patent/JP2008140795A5/ja
Application granted granted Critical
Publication of JP5025236B2 publication Critical patent/JP5025236B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006322526A 2006-11-29 2006-11-29 露光装置及び方法、並びに、デバイス製造方法 Expired - Fee Related JP5025236B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006322526A JP5025236B2 (ja) 2006-11-29 2006-11-29 露光装置及び方法、並びに、デバイス製造方法
TW096143203A TWI397780B (zh) 2006-11-29 2007-11-15 曝光設備、曝光方法、和裝置製造方法
US11/943,885 US7936442B2 (en) 2006-11-29 2007-11-21 Exposure apparatus, exposure method, and device fabrication method
KR1020070122385A KR100913271B1 (ko) 2006-11-29 2007-11-29 노광장치, 노광방법, 및 디바이스의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006322526A JP5025236B2 (ja) 2006-11-29 2006-11-29 露光装置及び方法、並びに、デバイス製造方法

Publications (3)

Publication Number Publication Date
JP2008140795A JP2008140795A (ja) 2008-06-19
JP2008140795A5 JP2008140795A5 (https=) 2010-01-21
JP5025236B2 true JP5025236B2 (ja) 2012-09-12

Family

ID=39463333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006322526A Expired - Fee Related JP5025236B2 (ja) 2006-11-29 2006-11-29 露光装置及び方法、並びに、デバイス製造方法

Country Status (4)

Country Link
US (1) US7936442B2 (https=)
JP (1) JP5025236B2 (https=)
KR (1) KR100913271B1 (https=)
TW (1) TWI397780B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456356B (zh) * 2009-04-09 2014-10-11 Nsk Technology Co Ltd 曝光裝置用之光照射裝置及其點亮控制方法、曝光裝置及基板
JP6506670B2 (ja) * 2015-10-07 2019-04-24 キヤノン株式会社 露光装置及びデバイス製造方法
US10274836B2 (en) * 2017-06-23 2019-04-30 International Business Machines Corporation Determination of lithography effective dose uniformity

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0225016A (ja) 1988-07-13 1990-01-26 Nec Corp 露光装置
JP2842879B2 (ja) * 1989-01-06 1999-01-06 株式会社日立製作所 表面分析方法および装置
US5389555A (en) * 1989-12-21 1995-02-14 Olympus Optical Co., Ltd. Particle pattern judging method
US5172421A (en) * 1991-03-27 1992-12-15 Hughes Aircraft Company Automated method of classifying optical fiber flaws
JP3314440B2 (ja) * 1993-02-26 2002-08-12 株式会社日立製作所 欠陥検査装置およびその方法
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
JP4066083B2 (ja) * 1998-02-09 2008-03-26 株式会社ニコン 光学素子光洗浄方法および投影露光装置
JPH11288870A (ja) * 1998-04-03 1999-10-19 Nikon Corp 露光装置
JP2002289515A (ja) * 2000-12-28 2002-10-04 Nikon Corp 製品の製造方法、露光装置の製造方法、露光装置、及びデバイス製造方法
JP2004335575A (ja) * 2003-05-01 2004-11-25 Canon Inc 露光装置
JP4878108B2 (ja) * 2004-07-14 2012-02-15 キヤノン株式会社 露光装置、デバイス製造方法、および測定装置
US7659976B2 (en) * 2005-12-12 2010-02-09 Carl Zeiss Smt Ag Devices and methods for inspecting optical elements with a view to contamination

Also Published As

Publication number Publication date
JP2008140795A (ja) 2008-06-19
US7936442B2 (en) 2011-05-03
US20080123068A1 (en) 2008-05-29
KR20080048966A (ko) 2008-06-03
TWI397780B (zh) 2013-06-01
TW200837504A (en) 2008-09-16
KR100913271B1 (ko) 2009-08-21

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