TWI397780B - 曝光設備、曝光方法、和裝置製造方法 - Google Patents

曝光設備、曝光方法、和裝置製造方法 Download PDF

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Publication number
TWI397780B
TWI397780B TW096143203A TW96143203A TWI397780B TW I397780 B TWI397780 B TW I397780B TW 096143203 A TW096143203 A TW 096143203A TW 96143203 A TW96143203 A TW 96143203A TW I397780 B TWI397780 B TW I397780B
Authority
TW
Taiwan
Prior art keywords
optical system
light
exposure
projection optical
amount
Prior art date
Application number
TW096143203A
Other languages
English (en)
Chinese (zh)
Other versions
TW200837504A (en
Inventor
森堅一郎
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW200837504A publication Critical patent/TW200837504A/zh
Application granted granted Critical
Publication of TWI397780B publication Critical patent/TWI397780B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096143203A 2006-11-29 2007-11-15 曝光設備、曝光方法、和裝置製造方法 TWI397780B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006322526A JP5025236B2 (ja) 2006-11-29 2006-11-29 露光装置及び方法、並びに、デバイス製造方法

Publications (2)

Publication Number Publication Date
TW200837504A TW200837504A (en) 2008-09-16
TWI397780B true TWI397780B (zh) 2013-06-01

Family

ID=39463333

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143203A TWI397780B (zh) 2006-11-29 2007-11-15 曝光設備、曝光方法、和裝置製造方法

Country Status (4)

Country Link
US (1) US7936442B2 (https=)
JP (1) JP5025236B2 (https=)
KR (1) KR100913271B1 (https=)
TW (1) TWI397780B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456356B (zh) * 2009-04-09 2014-10-11 Nsk Technology Co Ltd 曝光裝置用之光照射裝置及其點亮控制方法、曝光裝置及基板
JP6506670B2 (ja) * 2015-10-07 2019-04-24 キヤノン株式会社 露光装置及びデバイス製造方法
US10274836B2 (en) * 2017-06-23 2019-04-30 International Business Machines Corporation Determination of lithography effective dose uniformity

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233402A (ja) * 1998-02-09 1999-08-27 Nikon Corp 光学素子光洗浄方法および投影露光装置
JPH11288870A (ja) * 1998-04-03 1999-10-19 Nikon Corp 露光装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0225016A (ja) 1988-07-13 1990-01-26 Nec Corp 露光装置
JP2842879B2 (ja) * 1989-01-06 1999-01-06 株式会社日立製作所 表面分析方法および装置
US5389555A (en) * 1989-12-21 1995-02-14 Olympus Optical Co., Ltd. Particle pattern judging method
US5172421A (en) * 1991-03-27 1992-12-15 Hughes Aircraft Company Automated method of classifying optical fiber flaws
JP3314440B2 (ja) * 1993-02-26 2002-08-12 株式会社日立製作所 欠陥検査装置およびその方法
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
JP2002289515A (ja) * 2000-12-28 2002-10-04 Nikon Corp 製品の製造方法、露光装置の製造方法、露光装置、及びデバイス製造方法
JP2004335575A (ja) * 2003-05-01 2004-11-25 Canon Inc 露光装置
JP4878108B2 (ja) * 2004-07-14 2012-02-15 キヤノン株式会社 露光装置、デバイス製造方法、および測定装置
US7659976B2 (en) * 2005-12-12 2010-02-09 Carl Zeiss Smt Ag Devices and methods for inspecting optical elements with a view to contamination

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233402A (ja) * 1998-02-09 1999-08-27 Nikon Corp 光学素子光洗浄方法および投影露光装置
JPH11288870A (ja) * 1998-04-03 1999-10-19 Nikon Corp 露光装置

Also Published As

Publication number Publication date
JP2008140795A (ja) 2008-06-19
US7936442B2 (en) 2011-05-03
US20080123068A1 (en) 2008-05-29
KR20080048966A (ko) 2008-06-03
JP5025236B2 (ja) 2012-09-12
TW200837504A (en) 2008-09-16
KR100913271B1 (ko) 2009-08-21

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