KR100913271B1 - 노광장치, 노광방법, 및 디바이스의 제조방법 - Google Patents
노광장치, 노광방법, 및 디바이스의 제조방법 Download PDFInfo
- Publication number
- KR100913271B1 KR100913271B1 KR1020070122385A KR20070122385A KR100913271B1 KR 100913271 B1 KR100913271 B1 KR 100913271B1 KR 1020070122385 A KR1020070122385 A KR 1020070122385A KR 20070122385 A KR20070122385 A KR 20070122385A KR 100913271 B1 KR100913271 B1 KR 100913271B1
- Authority
- KR
- South Korea
- Prior art keywords
- light
- optical system
- exposure
- amount
- reticle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006322526A JP5025236B2 (ja) | 2006-11-29 | 2006-11-29 | 露光装置及び方法、並びに、デバイス製造方法 |
| JPJP-P-2006-00322526 | 2006-11-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080048966A KR20080048966A (ko) | 2008-06-03 |
| KR100913271B1 true KR100913271B1 (ko) | 2009-08-21 |
Family
ID=39463333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070122385A Expired - Fee Related KR100913271B1 (ko) | 2006-11-29 | 2007-11-29 | 노광장치, 노광방법, 및 디바이스의 제조방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7936442B2 (https=) |
| JP (1) | JP5025236B2 (https=) |
| KR (1) | KR100913271B1 (https=) |
| TW (1) | TWI397780B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI456356B (zh) * | 2009-04-09 | 2014-10-11 | Nsk Technology Co Ltd | 曝光裝置用之光照射裝置及其點亮控制方法、曝光裝置及基板 |
| JP6506670B2 (ja) * | 2015-10-07 | 2019-04-24 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US10274836B2 (en) * | 2017-06-23 | 2019-04-30 | International Business Machines Corporation | Determination of lithography effective dose uniformity |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11288870A (ja) | 1998-04-03 | 1999-10-19 | Nikon Corp | 露光装置 |
| KR20070062416A (ko) * | 2005-12-12 | 2007-06-15 | 칼 짜이스 에스엠테 아게 | 오염을 고려한 광학 소자 검사기구 및 검사방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0225016A (ja) | 1988-07-13 | 1990-01-26 | Nec Corp | 露光装置 |
| JP2842879B2 (ja) * | 1989-01-06 | 1999-01-06 | 株式会社日立製作所 | 表面分析方法および装置 |
| US5389555A (en) * | 1989-12-21 | 1995-02-14 | Olympus Optical Co., Ltd. | Particle pattern judging method |
| US5172421A (en) * | 1991-03-27 | 1992-12-15 | Hughes Aircraft Company | Automated method of classifying optical fiber flaws |
| JP3314440B2 (ja) * | 1993-02-26 | 2002-08-12 | 株式会社日立製作所 | 欠陥検査装置およびその方法 |
| AU1175799A (en) * | 1997-11-21 | 1999-06-15 | Nikon Corporation | Projection aligner and projection exposure method |
| JP4066083B2 (ja) * | 1998-02-09 | 2008-03-26 | 株式会社ニコン | 光学素子光洗浄方法および投影露光装置 |
| JP2002289515A (ja) * | 2000-12-28 | 2002-10-04 | Nikon Corp | 製品の製造方法、露光装置の製造方法、露光装置、及びデバイス製造方法 |
| JP2004335575A (ja) * | 2003-05-01 | 2004-11-25 | Canon Inc | 露光装置 |
| JP4878108B2 (ja) * | 2004-07-14 | 2012-02-15 | キヤノン株式会社 | 露光装置、デバイス製造方法、および測定装置 |
-
2006
- 2006-11-29 JP JP2006322526A patent/JP5025236B2/ja not_active Expired - Fee Related
-
2007
- 2007-11-15 TW TW096143203A patent/TWI397780B/zh not_active IP Right Cessation
- 2007-11-21 US US11/943,885 patent/US7936442B2/en not_active Expired - Fee Related
- 2007-11-29 KR KR1020070122385A patent/KR100913271B1/ko not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11288870A (ja) | 1998-04-03 | 1999-10-19 | Nikon Corp | 露光装置 |
| KR20070062416A (ko) * | 2005-12-12 | 2007-06-15 | 칼 짜이스 에스엠테 아게 | 오염을 고려한 광학 소자 검사기구 및 검사방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008140795A (ja) | 2008-06-19 |
| US7936442B2 (en) | 2011-05-03 |
| US20080123068A1 (en) | 2008-05-29 |
| KR20080048966A (ko) | 2008-06-03 |
| TWI397780B (zh) | 2013-06-01 |
| JP5025236B2 (ja) | 2012-09-12 |
| TW200837504A (en) | 2008-09-16 |
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