JP5017332B2 - インバータ - Google Patents

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Publication number
JP5017332B2
JP5017332B2 JP2009192710A JP2009192710A JP5017332B2 JP 5017332 B2 JP5017332 B2 JP 5017332B2 JP 2009192710 A JP2009192710 A JP 2009192710A JP 2009192710 A JP2009192710 A JP 2009192710A JP 5017332 B2 JP5017332 B2 JP 5017332B2
Authority
JP
Japan
Prior art keywords
wiring
power
power module
cooling body
external
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2009192710A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009278134A5 (enrdf_load_stackoverflow
JP2009278134A (ja
Inventor
一二 山田
敏夫 小川
典孝 神村
卓義 中村
光幸 本部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2009192710A priority Critical patent/JP5017332B2/ja
Publication of JP2009278134A publication Critical patent/JP2009278134A/ja
Publication of JP2009278134A5 publication Critical patent/JP2009278134A5/ja
Application granted granted Critical
Publication of JP5017332B2 publication Critical patent/JP5017332B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
JP2009192710A 2009-08-24 2009-08-24 インバータ Expired - Lifetime JP5017332B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009192710A JP5017332B2 (ja) 2009-08-24 2009-08-24 インバータ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009192710A JP5017332B2 (ja) 2009-08-24 2009-08-24 インバータ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006299816A Division JP4403166B2 (ja) 2006-11-06 2006-11-06 パワーモジュールおよび電力変換装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2011114278A Division JP5202685B2 (ja) 2011-05-23 2011-05-23 インバータ
JP2011114279A Division JP5188602B2 (ja) 2011-05-23 2011-05-23 インバータ

Publications (3)

Publication Number Publication Date
JP2009278134A JP2009278134A (ja) 2009-11-26
JP2009278134A5 JP2009278134A5 (enrdf_load_stackoverflow) 2011-07-07
JP5017332B2 true JP5017332B2 (ja) 2012-09-05

Family

ID=41443198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009192710A Expired - Lifetime JP5017332B2 (ja) 2009-08-24 2009-08-24 インバータ

Country Status (1)

Country Link
JP (1) JP5017332B2 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2951375B2 (ja) * 1990-07-31 1999-09-20 古河電気工業株式会社 低風騒音低コロナ騒音架空電線
JP5327646B2 (ja) 2009-06-24 2013-10-30 株式会社デンソー 電子回路内蔵型モータ
EP2637285B1 (en) * 2010-11-02 2020-04-01 Mitsubishi Electric Corporation Electric power steering power module and electric power steering drive control device employing same
CN103229295B (zh) * 2010-11-29 2016-01-06 丰田自动车株式会社 动力模块
WO2012108048A1 (ja) * 2011-02-10 2012-08-16 三菱電機株式会社 電力変換装置
JP2013232445A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体装置
DE102015104990B4 (de) 2015-03-31 2020-06-04 Infineon Technologies Austria Ag Verbindungshalbleitervorrichtung mit einem Abtastlead
JP6308978B2 (ja) * 2015-06-16 2018-04-11 三菱電機株式会社 半導体装置
KR101663558B1 (ko) * 2016-05-23 2016-10-07 제엠제코(주) 패키지 파괴 방지 구조를 갖는 반도체 칩 패키지
WO2018198957A1 (ja) * 2017-04-24 2018-11-01 ローム株式会社 半導体装置
JP7484156B2 (ja) * 2019-12-18 2024-05-16 富士電機株式会社 半導体装置
JP7026861B1 (ja) * 2021-05-11 2022-02-28 三菱電機株式会社 半導体装置及び電力変換装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2667510B2 (ja) * 1989-05-20 1997-10-27 株式会社日立製作所 半導体装置およびこれを用いた電子装置
JPH03191553A (ja) * 1989-12-20 1991-08-21 Hitachi Ltd 半導体装置およびその製造方法
JPH07231071A (ja) * 1994-02-16 1995-08-29 Toshiba Corp 半導体モジュール
JP3879150B2 (ja) * 1996-08-12 2007-02-07 株式会社デンソー 半導体装置
JP3550970B2 (ja) * 1997-09-19 2004-08-04 株式会社日立製作所 電力変換装置並びに多層積層導体と電気部品接続体
JP3903681B2 (ja) * 1999-03-11 2007-04-11 三菱マテリアル株式会社 半導体装置
JP4100483B2 (ja) * 1999-08-25 2008-06-11 日本インター株式会社 複合半導体装置及びその製造方法
JP3529675B2 (ja) * 1999-09-03 2004-05-24 株式会社東芝 半導体装置及びインバータ装置
JP3525832B2 (ja) * 1999-11-24 2004-05-10 株式会社デンソー 半導体装置

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Publication number Publication date
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