JP5015135B2 - メモリアレイにブロック冗長性を組込むための方法および装置 - Google Patents

メモリアレイにブロック冗長性を組込むための方法および装置 Download PDF

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JP5015135B2
JP5015135B2 JP2008504454A JP2008504454A JP5015135B2 JP 5015135 B2 JP5015135 B2 JP 5015135B2 JP 2008504454 A JP2008504454 A JP 2008504454A JP 2008504454 A JP2008504454 A JP 2008504454A JP 5015135 B2 JP5015135 B2 JP 5015135B2
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memory
block
array
lines
spare
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JP2008535142A (ja
JP2008535142A5 (enExample
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ファソリ，ルカ・ジー
ショイアーライン，ロイ・イー
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SanDisk 3D LLC
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SanDisk 3D LLC
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/804—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout to prevent clustered faults
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
JP2008504454A 2005-03-31 2006-03-31 メモリアレイにブロック冗長性を組込むための方法および装置 Active JP5015135B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/095,907 2005-03-31
US11/095,907 US7142471B2 (en) 2005-03-31 2005-03-31 Method and apparatus for incorporating block redundancy in a memory array
PCT/US2006/012107 WO2006121529A2 (en) 2005-03-31 2006-03-31 Method and apparatus for incorporating block redundancy in a memory array

Publications (3)

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JP2008535142A JP2008535142A (ja) 2008-08-28
JP2008535142A5 JP2008535142A5 (enExample) 2009-04-09
JP5015135B2 true JP5015135B2 (ja) 2012-08-29

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US (1) US7142471B2 (enExample)
EP (1) EP1864291B1 (enExample)
JP (1) JP5015135B2 (enExample)
KR (1) KR101253217B1 (enExample)
CN (1) CN101167139B (enExample)
TW (1) TWI326880B (enExample)
WO (1) WO2006121529A2 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005267735A (ja) * 2004-03-18 2005-09-29 Oki Electric Ind Co Ltd 半導体メモリおよび半導体メモリのメモリセル選択方法
US7046560B2 (en) * 2004-09-02 2006-05-16 Micron Technology, Inc. Reduction of fusible links and associated circuitry on memory dies
KR100615575B1 (ko) * 2004-09-10 2006-08-25 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 배치 방법
US7272052B2 (en) * 2005-03-31 2007-09-18 Sandisk 3D Llc Decoding circuit for non-binary groups of memory line drivers
KR100694406B1 (ko) * 2005-04-21 2007-03-12 주식회사 하이닉스반도체 불량 셀 처리 회로를 포함하는 불휘발성 강유전체 메모리장치 및 제어 방법
US7388273B2 (en) 2005-06-14 2008-06-17 International Business Machines Corporation Reprogrammable fuse structure and method
DE102006025291B3 (de) * 2006-05-31 2007-12-13 Infineon Technologies Ag Integrierter elektrischer Baustein mit regulären und redundanten Elementen
US7486587B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Dual data-dependent busses for coupling read/write circuits to a memory array
US7554832B2 (en) * 2006-07-31 2009-06-30 Sandisk 3D Llc Passive element memory array incorporating reversible polarity word line and bit line decoders
US8279704B2 (en) 2006-07-31 2012-10-02 Sandisk 3D Llc Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same
US7570523B2 (en) * 2006-07-31 2009-08-04 Sandisk 3D Llc Method for using two data busses for memory array block selection
US7463536B2 (en) * 2006-07-31 2008-12-09 Sandisk 3D Llc Memory array incorporating two data busses for memory array block selection
US7542338B2 (en) * 2006-07-31 2009-06-02 Sandisk 3D Llc Method for reading a multi-level passive element memory cell array
US7633828B2 (en) * 2006-07-31 2009-12-15 Sandisk 3D Llc Hierarchical bit line bias bus for block selectable memory array
US7596050B2 (en) * 2006-07-31 2009-09-29 Sandisk 3D Llc Method for using a hierarchical bit line bias bus for block selectable memory array
US7463546B2 (en) * 2006-07-31 2008-12-09 Sandisk 3D Llc Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders
US7542337B2 (en) * 2006-07-31 2009-06-02 Sandisk 3D Llc Apparatus for reading a multi-level passive element memory cell array
US7499366B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc Method for using dual data-dependent busses for coupling read/write circuits to a memory array
US7525869B2 (en) * 2006-12-31 2009-04-28 Sandisk 3D Llc Method for using a reversible polarity decoder circuit
US7542370B2 (en) * 2006-12-31 2009-06-02 Sandisk 3D Llc Reversible polarity decoder circuit
US7870471B2 (en) * 2007-01-31 2011-01-11 Sandisk 3D Llc Methods and apparatus for employing redundant arrays to configure non-volatile memory
US7870472B2 (en) * 2007-01-31 2011-01-11 Sandisk 3D Llc Methods and apparatus for employing redundant arrays to configure non-volatile memory
US7554406B2 (en) 2007-03-31 2009-06-30 Sandisk 3D Llc Spatially distributed amplifier circuit
US7558140B2 (en) * 2007-03-31 2009-07-07 Sandisk 3D Llc Method for using a spatially distributed amplifier circuit
US7996710B2 (en) 2007-04-25 2011-08-09 Hewlett-Packard Development Company, L.P. Defect management for a semiconductor memory system
US7694093B2 (en) 2007-04-27 2010-04-06 Hewlett-Packard Development Company, L.P. Memory module and method for mirroring data by rank
US7966518B2 (en) * 2007-05-15 2011-06-21 Sandisk Corporation Method for repairing a neighborhood of rows in a memory array using a patch table
US7958390B2 (en) * 2007-05-15 2011-06-07 Sandisk Corporation Memory device for repairing a neighborhood of rows in a memory array using a patch table
WO2009013832A1 (ja) * 2007-07-26 2009-01-29 Advantest Corporation 予備ライン割当装置、メモリ救済装置、予備ライン割当方法、メモリ製造方法、およびプログラム
US7843746B2 (en) * 2007-12-31 2010-11-30 Qimonda Ag Method and device for redundancy replacement in semiconductor devices using a multiplexer
KR101373183B1 (ko) * 2008-01-15 2014-03-14 삼성전자주식회사 3차원 어레이 구조를 갖는 메모리 장치 및 그것의 리페어방법
JP5106151B2 (ja) * 2008-01-28 2012-12-26 株式会社東芝 積層型スタックｎａｎｄメモリ及び半導体装置
JP2009199695A (ja) * 2008-02-25 2009-09-03 Toshiba Corp 抵抗変化メモリ装置
US7864579B2 (en) * 2008-07-24 2011-01-04 Qimonda Ag Integrated circuits having a controller to control a read operation and methods for operating the same
US7996736B2 (en) * 2008-10-26 2011-08-09 Sandisk 3D Llc Bad page marking strategy for fast readout in memory
US8400854B2 (en) * 2009-09-11 2013-03-19 Sandisk Technologies Inc. Identifying at-risk data in non-volatile storage
US8223525B2 (en) * 2009-12-15 2012-07-17 Sandisk 3D Llc Page register outside array and sense amplifier interface
CN101833992B (zh) * 2010-05-11 2013-03-13 中国科学院上海微系统与信息技术研究所 具有冗余存储单元的相变随机存储器系统
KR101180408B1 (ko) * 2011-01-28 2012-09-10 에스케이하이닉스 주식회사 반도체 집적회로 및 그 제어 방법
US8699293B2 (en) 2011-04-27 2014-04-15 Sandisk 3D Llc Non-volatile storage system with dual block programming
US8947944B2 (en) 2013-03-15 2015-02-03 Sandisk 3D Llc Program cycle skip evaluation before write operations in non-volatile memory
US8947972B2 (en) 2013-03-15 2015-02-03 Sandisk 3D Llc Dynamic address grouping for parallel programming in non-volatile memory
US9001546B2 (en) * 2013-08-22 2015-04-07 Taiwan Semiconductor Manufacturing Company Limited 3D structure for advanced SRAM design to avoid half-selected issue
US9222983B2 (en) * 2013-09-16 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method for monolithic stacked integrated circuit testing
US9711225B2 (en) 2013-10-16 2017-07-18 Sandisk Technologies Llc Regrouping and skipping cycles in non-volatile memory
US9558791B2 (en) * 2013-12-05 2017-01-31 Taiwan Semiconductor Manufacturing Company Limited Three-dimensional static random access memory device structures
US10146619B2 (en) 2014-07-31 2018-12-04 Hewlett Packard Enterprise Development Lp Assigning redundancy in encoding data onto crossbar memory arrays
US9564215B2 (en) 2015-02-11 2017-02-07 Sandisk Technologies Llc Independent sense amplifier addressing and quota sharing in non-volatile memory
US9881697B2 (en) 2016-03-04 2018-01-30 Sandisk Technologies Llc Dynamic-shifting redundancy mapping for non-volatile data storage
US10146604B2 (en) * 2016-08-23 2018-12-04 Oracle International Corporation Bad block detection and predictive analytics in NAND flash storage devices
KR102490567B1 (ko) * 2018-03-27 2023-01-20 에스케이하이닉스 주식회사 디스터번스를 방지하는 반도체 메모리 장치
US10971247B2 (en) * 2018-03-29 2021-04-06 Samsung Electronics Co., Ltd. Semiconductor memory devices, memory systems, and methods of operating semiconductor memory devices
CN116072168B (zh) * 2021-10-29 2025-08-29 长鑫存储技术有限公司 存储器结构以及存储器
US12488858B2 (en) 2024-01-04 2025-12-02 Piecemakers Technology, Inc. Method and circuitry for handling defective memory cells and wordlines in memory module

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US528186A (en) * 1894-10-30 Max strakosch
JPS5837948A (ja) 1981-08-31 1983-03-05 Toshiba Corp 積層半導体記憶装置
US4602354A (en) 1983-01-10 1986-07-22 Ncr Corporation X-and-OR memory array
US4646266A (en) 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4868616A (en) 1986-12-11 1989-09-19 Energy Conversion Devices, Inc. Amorphous electronic matrix array for liquid crystal display
EP0395886A2 (en) 1989-04-03 1990-11-07 Olympus Optical Co., Ltd. Memory cell and multidimensinal memory device constituted by arranging the memory cells
JP2900944B2 (ja) * 1989-07-04 1999-06-02 富士通株式会社 半導体メモリ
JP2586187B2 (ja) 1990-07-16 1997-02-26 日本電気株式会社 半導体記憶装置
JP3109537B2 (ja) 1991-07-12 2000-11-20 日本電気株式会社 読み出し専用半導体記憶装置
US5281868A (en) * 1992-08-18 1994-01-25 Micron Technology, Inc. Memory redundancy addressing circuit for adjacent columns in a memory
US5715189A (en) 1993-04-13 1998-02-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having hierarchical bit line arrangement
JP3192861B2 (ja) 1994-03-14 2001-07-30 株式会社東芝 不揮発性半導体記憶装置
DE69412234T2 (de) * 1994-03-29 1999-06-17 Sgs-Thomson Microelectronics S.R.L., Agrate Brianza, Mailand/Milano Redundanzschaltung für eine Halbleiter-Speicheranordnung
GB9424598D0 (en) 1994-12-06 1995-01-25 Philips Electronics Uk Ltd Semiconductor memory with non-volatile memory transistor
US5572470A (en) * 1995-05-10 1996-11-05 Sgs-Thomson Microelectronics, Inc. Apparatus and method for mapping a redundant memory column to a defective memory column
JP3532300B2 (ja) * 1995-05-11 2004-05-31 株式会社日立製作所 半導体記憶装置
US5751012A (en) 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
WO1997015929A1 (en) 1995-10-25 1997-05-01 Nvx Corporation Semiconductor non-volatile memory device having a nand cell structure
US5969380A (en) 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory
KR100210846B1 (ko) 1996-06-07 1999-07-15 구본준 낸드셀 어레이
US5835396A (en) 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
JPH10149688A (ja) 1996-11-20 1998-06-02 Sony Corp 半導体不揮発性記憶装置およびそのデータプログラム方法
US6256224B1 (en) 2000-05-03 2001-07-03 Hewlett-Packard Co Write circuit for large MRAM arrays
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
US6005270A (en) 1997-11-10 1999-12-21 Sony Corporation Semiconductor nonvolatile memory device and method of production of same
US6130835A (en) 1997-12-02 2000-10-10 International Business Machines Corporation Voltage biasing for magnetic RAM with magnetic tunnel memory cells
US5991193A (en) 1997-12-02 1999-11-23 International Business Machines Corporation Voltage biasing for magnetic ram with magnetic tunnel memory cells
US5917744A (en) 1997-12-18 1999-06-29 Siemens Aktiengesellschaft Semiconductor memory having hierarchical bit line architecture with interleaved master bitlines
US6185121B1 (en) 1998-02-26 2001-02-06 Lucent Technologies Inc. Access structure for high density read only memory
JP2000076885A (ja) * 1998-08-27 2000-03-14 Texas Instr Japan Ltd 半導体メモリ装置
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385074B1 (en) 1998-11-16 2002-05-07 Matrix Semiconductor, Inc. Integrated circuit structure including three-dimensional memory array
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
JP2001028427A (ja) 1999-07-14 2001-01-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US6484271B1 (en) * 1999-09-16 2002-11-19 Koninklijke Philips Electronics N.V. Memory redundancy techniques
US6504246B2 (en) 1999-10-12 2003-01-07 Motorola, Inc. Integrated circuit having a balanced twist for differential signal lines
DE10010457A1 (de) 2000-03-03 2001-09-20 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt
US6567287B2 (en) 2001-03-21 2003-05-20 Matrix Semiconductor, Inc. Memory device with row and column decoder circuits arranged in a checkerboard pattern under a plurality of memory arrays
US6420215B1 (en) 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6856572B2 (en) 2000-04-28 2005-02-15 Matrix Semiconductor, Inc. Multi-headed decoder structure utilizing memory array line driver with dual purpose driver device
US6631085B2 (en) 2000-04-28 2003-10-07 Matrix Semiconductor, Inc. Three-dimensional memory array incorporating serial chain diode stack
JP4477199B2 (ja) 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
JP3672803B2 (ja) 2000-07-28 2005-07-20 Ｎｅｃエレクトロニクス株式会社 不揮発性記憶装置
US6515888B2 (en) 2000-08-14 2003-02-04 Matrix Semiconductor, Inc. Low cost three-dimensional memory array
KR100821456B1 (ko) 2000-08-14 2008-04-11 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법
US6324093B1 (en) 2000-09-15 2001-11-27 Hewlett-Packard Company Write-once thin-film memory
US6335890B1 (en) 2000-11-01 2002-01-01 International Business Machines Corporation Segmented write line architecture for writing magnetic random access memories
DE10058047A1 (de) 2000-11-23 2002-06-13 Infineon Technologies Ag Integrierter Speicher mit einer Anordnung von nicht-flüchtigen Speicherzellen und Verfahren zur Herstellung und zum Betrieb des integrierten Speichers
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US6611453B2 (en) 2001-01-24 2003-08-26 Infineon Technologies Ag Self-aligned cross-point MRAM device with aluminum metallization layers
US6584006B2 (en) 2001-01-24 2003-06-24 Infineon Technologies North America Corp. MRAM bit line word line architecture
US6490194B2 (en) 2001-01-24 2002-12-03 Infineon Technologies Ag Serial MRAM device
US6356477B1 (en) 2001-01-29 2002-03-12 Hewlett Packard Company Cross point memory array including shared devices for blocking sneak path currents
KR100375235B1 (ko) 2001-03-17 2003-03-08 삼성전자주식회사 에스.오.엔.오.에스 플래시 기억소자 및 그 형성 방법
US6522594B1 (en) 2001-03-21 2003-02-18 Matrix Semiconductor, Inc. Memory array incorporating noise detection line
US6618295B2 (en) 2001-03-21 2003-09-09 Matrix Semiconductor, Inc. Method and apparatus for biasing selected and unselected array lines when writing a memory array
US7177181B1 (en) 2001-03-21 2007-02-13 Sandisk 3D Llc Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
US6545898B1 (en) 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
US6614685B2 (en) * 2001-08-09 2003-09-02 Multi Level Memory Technology Flash memory array partitioning architectures
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6473328B1 (en) 2001-08-30 2002-10-29 Micron Technology, Inc. Three-dimensional magnetic memory array with a minimal number of access conductors therein
US6498747B1 (en) 2002-02-08 2002-12-24 Infineon Technologies Ag Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects
US6687147B2 (en) 2002-04-02 2004-02-03 Hewlett-Packard Development Company, L.P. Cubic memory array with diagonal select lines
US7081377B2 (en) 2002-06-27 2006-07-25 Sandisk 3D Llc Three-dimensional memory
JP4111762B2 (ja) * 2002-07-03 2008-07-02 株式会社ルネサステクノロジ 半導体記憶装置
JP4175852B2 (ja) * 2002-09-13 2008-11-05 スパンション エルエルシー 冗長セルアレイへの置き換えを正常に行う半導体メモリ
US6859410B2 (en) 2002-11-27 2005-02-22 Matrix Semiconductor, Inc. Tree decoder structure particularly well-suited to interfacing array lines having extremely small layout pitch
US6849905B2 (en) 2002-12-23 2005-02-01 Matrix Semiconductor, Inc. Semiconductor device with localized charge storage dielectric and method of making same
US7005350B2 (en) 2002-12-31 2006-02-28 Matrix Semiconductor, Inc. Method for fabricating programmable memory array structures incorporating series-connected transistor strings
US6960794B2 (en) 2002-12-31 2005-11-01 Matrix Semiconductor, Inc. Formation of thin channels for TFT devices to ensure low variability of threshold voltages
US7505321B2 (en) 2002-12-31 2009-03-17 Sandisk 3D Llc Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
US7233522B2 (en) 2002-12-31 2007-06-19 Sandisk 3D Llc NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
US7233024B2 (en) 2003-03-31 2007-06-19 Sandisk 3D Llc Three-dimensional memory device incorporating segmented bit line memory array
US6822903B2 (en) 2003-03-31 2004-11-23 Matrix Semiconductor, Inc. Apparatus and method for disturb-free programming of passive element memory cells
US6879505B2 (en) 2003-03-31 2005-04-12 Matrix Semiconductor, Inc. Word line arrangement having multi-layer word line segments for three-dimensional memory array
US7291878B2 (en) * 2003-06-03 2007-11-06 Hitachi Global Storage Technologies Netherlands B.V. Ultra low-cost solid-state memory
US7023739B2 (en) 2003-12-05 2006-04-04 Matrix Semiconductor, Inc. NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
US7221588B2 (en) 2003-12-05 2007-05-22 Sandisk 3D Llc Memory array incorporating memory cells arranged in NAND strings
US7423304B2 (en) 2003-12-05 2008-09-09 Sandisck 3D Llc Optimization of critical dimensions and pitch of patterned features in and above a substrate
US20050128807A1 (en) 2003-12-05 2005-06-16 En-Hsing Chen Nand memory array incorporating multiple series selection devices and method for operation of same

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Publication number Publication date
KR20080007434A (ko) 2008-01-21
TW200709215A (en) 2007-03-01
WO2006121529A3 (en) 2007-08-02
CN101167139B (zh) 2010-09-08
US7142471B2 (en) 2006-11-28
TWI326880B (en) 2010-07-01
EP1864291A4 (en) 2009-04-08
JP2008535142A (ja) 2008-08-28
CN101167139A (zh) 2008-04-23
EP1864291B1 (en) 2012-06-13
WO2006121529A2 (en) 2006-11-16
KR101253217B1 (ko) 2013-04-16
US20060221728A1 (en) 2006-10-05
EP1864291A2 (en) 2007-12-12

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