JP5010758B2 - 電極箔および有機デバイス - Google Patents

電極箔および有機デバイス Download PDF

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Publication number
JP5010758B2
JP5010758B2 JP2011536655A JP2011536655A JP5010758B2 JP 5010758 B2 JP5010758 B2 JP 5010758B2 JP 2011536655 A JP2011536655 A JP 2011536655A JP 2011536655 A JP2011536655 A JP 2011536655A JP 5010758 B2 JP5010758 B2 JP 5010758B2
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JP
Japan
Prior art keywords
organic
layer
electrode foil
film
foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011536655A
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English (en)
Japanese (ja)
Other versions
JPWO2011152091A1 (ja
Inventor
浦 宜 範 松
島 望 北
部 直 彦 阿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to JP2011536655A priority Critical patent/JP5010758B2/ja
Application granted granted Critical
Publication of JP5010758B2 publication Critical patent/JP5010758B2/ja
Publication of JPWO2011152091A1 publication Critical patent/JPWO2011152091A1/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/87—Arrangements for heating or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12431—Foil or filament smaller than 6 mils
    • Y10T428/12438—Composite
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12986—Adjacent functionally defined components

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2011536655A 2010-06-04 2011-03-01 電極箔および有機デバイス Expired - Fee Related JP5010758B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011536655A JP5010758B2 (ja) 2010-06-04 2011-03-01 電極箔および有機デバイス

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2010129064 2010-06-04
JP2010129064 2010-06-04
JP2010175420 2010-08-04
JP2010175420 2010-08-04
PCT/JP2011/054627 WO2011152091A1 (ja) 2010-06-04 2011-03-01 電極箔および有機デバイス
JP2011536655A JP5010758B2 (ja) 2010-06-04 2011-03-01 電極箔および有機デバイス

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012119754A Division JP2012212675A (ja) 2010-06-04 2012-05-25 電極箔および有機デバイス

Publications (2)

Publication Number Publication Date
JP5010758B2 true JP5010758B2 (ja) 2012-08-29
JPWO2011152091A1 JPWO2011152091A1 (ja) 2013-07-25

Family

ID=45066480

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011536655A Expired - Fee Related JP5010758B2 (ja) 2010-06-04 2011-03-01 電極箔および有機デバイス
JP2012119754A Pending JP2012212675A (ja) 2010-06-04 2012-05-25 電極箔および有機デバイス
JP2013035556A Expired - Fee Related JP5832034B2 (ja) 2010-06-04 2013-02-26 電極箔および有機デバイス

Family Applications After (2)

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JP2012119754A Pending JP2012212675A (ja) 2010-06-04 2012-05-25 電極箔および有機デバイス
JP2013035556A Expired - Fee Related JP5832034B2 (ja) 2010-06-04 2013-02-26 電極箔および有機デバイス

Country Status (5)

Country Link
US (2) US8803135B2 (enExample)
EP (1) EP2579686B1 (enExample)
JP (3) JP5010758B2 (enExample)
TW (1) TWI466772B (enExample)
WO (1) WO2011152091A1 (enExample)

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JPH0936608A (ja) * 1995-07-13 1997-02-07 Tokin Corp 同軸型誘電体共振器を用いた高周波電子部品
JP5016712B2 (ja) * 2010-09-21 2012-09-05 三井金属鉱業株式会社 電極箔および有機デバイス
JP2013161698A (ja) * 2012-02-07 2013-08-19 Mitsui Mining & Smelting Co Ltd 電極箔および電子デバイス
JP5970865B2 (ja) * 2012-03-05 2016-08-17 大日本印刷株式会社 薄膜素子用基板、薄膜素子、有機エレクトロルミネッセンス表示装置、および電子ペーパー
JP5297546B1 (ja) * 2012-04-23 2013-09-25 三井金属鉱業株式会社 電極箔及び電子デバイス
CA2877904A1 (en) * 2012-06-25 2014-01-03 Stephen R. Forrest Large area organic photovoltaics
CN102760841B (zh) * 2012-07-11 2014-11-26 深圳市华星光电技术有限公司 有机发光二极管器件及相应的显示装置
CN104472012B (zh) * 2012-07-24 2016-06-29 三井金属矿业株式会社 电极箔和有机发光器件
WO2014017135A1 (ja) 2012-07-27 2014-01-30 三井金属鉱業株式会社 金属箔及び電子デバイス
TWI511188B (zh) * 2012-09-07 2015-12-01 Iner Aec Executive Yuan 一種可撓式薄膜元件形成指狀金屬電極佈線的方法及所製造之裝置
TWI476284B (zh) * 2012-12-14 2015-03-11 Solar Applied Mat Tech Corp 多元合金材料層及包含其之太陽能電池
JP6141641B2 (ja) * 2013-01-09 2017-06-07 三井金属鉱業株式会社 電解銅箔及び電子デバイス
JP2015041566A (ja) * 2013-08-23 2015-03-02 三井金属鉱業株式会社 有機半導体デバイス
JP5840743B2 (ja) * 2013-09-05 2016-01-06 旭化成ケミカルズ株式会社 ポリエチレン樹脂組成物、微多孔性フィルム及びその製造方法、並びに、電池用セパレーター
JP6039540B2 (ja) 2013-12-13 2016-12-07 三井金属鉱業株式会社 電解銅箔及びその製造方法
WO2015190550A1 (ja) * 2014-06-12 2015-12-17 シャープ株式会社 有機素子
CN106664754B (zh) * 2014-08-29 2018-11-02 住友化学株式会社 有机电致发光元件
WO2016174970A1 (ja) * 2015-04-28 2016-11-03 三井金属鉱業株式会社 表面処理銅箔及びその製造方法、プリント配線板用銅張積層板、並びにプリント配線板
JP6355288B1 (ja) * 2017-04-26 2018-07-11 国立大学法人九州大学 電極、構造体およびその製造方法、接続構造体、並びに、その電極を用いた素子
KR102661275B1 (ko) * 2017-10-26 2024-04-29 미쓰이금속광업주식회사 극박 구리박 및 캐리어 구비 극박 구리박, 그리고 프린트 배선판의 제조 방법
CN110594699B (zh) * 2019-10-18 2024-07-30 深圳市尚为照明有限公司 防水灯罩和防水灯具
KR20220033650A (ko) * 2020-09-09 2022-03-17 삼성디스플레이 주식회사 반사 전극 및 이를 포함하는 표시 장치

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JP2002015859A (ja) * 2000-06-30 2002-01-18 Sony Corp 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス表示装置
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JP2004087451A (ja) * 2002-07-05 2004-03-18 Sumitomo Metal Mining Co Ltd 透明導電性薄膜、その形成方法、それを用いた表示パネル用透明導電性基材及び有機エレクトロルミネッセンス素子
JP2006269224A (ja) * 2005-03-23 2006-10-05 Fuji Electric Holdings Co Ltd 有機発光素子及びその製造方法
JP2006331694A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Works Ltd 有機発光素子及び有機発光素子用基板
JP2008243772A (ja) * 2007-03-29 2008-10-09 Seiko Epson Corp 発光装置およびその製造方法
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WO2010000226A1 (de) * 2008-07-03 2010-01-07 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines organischen elektronischen bauelements und organisches elektronisches bauelement
JP2010082899A (ja) * 2008-09-30 2010-04-15 Dainippon Printing Co Ltd 可撓性基板、可撓性基板の製造方法、及び製品
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JP2011515815A (ja) * 2008-03-26 2011-05-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光ダイオード装置
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JP4860448B2 (ja) 2006-12-07 2012-01-25 新日鉄マテリアルズ株式会社 電子デバイス作製用絶縁被覆金属箔
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JP5660030B2 (ja) * 2009-03-16 2015-01-28 コニカミノルタ株式会社 有機エレクトロニクスパネルおよび有機エレクトロニクスパネルの製造方法

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JP2002015859A (ja) * 2000-06-30 2002-01-18 Sony Corp 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス表示装置
JP2004006221A (ja) * 2002-03-27 2004-01-08 Sumitomo Metal Mining Co Ltd 透明導電性薄膜、その製造方法と製造用焼結体ターゲット、及び有機エレクトロルミネッセンス素子とその製造方法
JP2004087451A (ja) * 2002-07-05 2004-03-18 Sumitomo Metal Mining Co Ltd 透明導電性薄膜、その形成方法、それを用いた表示パネル用透明導電性基材及び有機エレクトロルミネッセンス素子
JP2006269224A (ja) * 2005-03-23 2006-10-05 Fuji Electric Holdings Co Ltd 有機発光素子及びその製造方法
JP2006331694A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Works Ltd 有機発光素子及び有機発光素子用基板
JP2008243772A (ja) * 2007-03-29 2008-10-09 Seiko Epson Corp 発光装置およびその製造方法
WO2009060916A1 (ja) * 2007-11-09 2009-05-14 Asahi Glass Co., Ltd. 透光性基板、その製造方法、有機ｌｅｄ素子およびその製造方法
JP2011515815A (ja) * 2008-03-26 2011-05-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光ダイオード装置
WO2010000226A1 (de) * 2008-07-03 2010-01-07 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines organischen elektronischen bauelements und organisches elektronisches bauelement
JP2011526409A (ja) * 2008-07-03 2011-10-06 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機電子構成部材を製造する方法および電子構成部材
JP2011529244A (ja) * 2008-07-25 2011-12-01 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ビーム放射装置およびビーム放射装置を製造する方法
JP2010082899A (ja) * 2008-09-30 2010-04-15 Dainippon Printing Co Ltd 可撓性基板、可撓性基板の製造方法、及び製品
WO2010113376A1 (ja) * 2009-03-31 2010-10-07 パナソニック株式会社 フレキシブル半導体装置およびその製造方法

Also Published As

Publication number Publication date
US9490440B2 (en) 2016-11-08
JP2012212675A (ja) 2012-11-01
EP2579686B1 (en) 2018-07-25
JP2013157325A (ja) 2013-08-15
JP5832034B2 (ja) 2015-12-16
EP2579686A4 (en) 2014-12-31
JPWO2011152091A1 (ja) 2013-07-25
US20140284589A1 (en) 2014-09-25
TW201144054A (en) 2011-12-16
US20130069042A1 (en) 2013-03-21
US8803135B2 (en) 2014-08-12
EP2579686A1 (en) 2013-04-10
TWI466772B (zh) 2015-01-01
WO2011152091A1 (ja) 2011-12-08

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