JP5006334B2 - セルフリフレッシュを用いた低消費電力の半導体集積回路 - Google Patents
セルフリフレッシュを用いた低消費電力の半導体集積回路 Download PDFInfo
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- JP5006334B2 JP5006334B2 JP2008542571A JP2008542571A JP5006334B2 JP 5006334 B2 JP5006334 B2 JP 5006334B2 JP 2008542571 A JP2008542571 A JP 2008542571A JP 2008542571 A JP2008542571 A JP 2008542571A JP 5006334 B2 JP5006334 B2 JP 5006334B2
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Description
(1)
上式で、
VTP0はトランジスタ512の閾値電圧であり、
VTP1はインバータ510のpチャネルトランジスタ552の閾値電圧であり、
WP0はトランジスタ512のチャネル幅であり、
WP1はトランジスタ552のチャネル幅であり、
Sはサブスレッショルド係数(subthreshold swing)である。
(2)
上式で、
VTN0はトランジスタ514の閾値電圧であり、
VTN1はNANDゲート508のnチャネルトランジスタ548の閾値電圧であり、
WN0はトランジスタ514のチャネル幅であり、
WN1はトランジスタ548のチャネル幅であり、
Sはサブスレッショルド係数である。
402 高速行プリデコーダ回路
404 低出力行プリデコーダ回路
406 モード依存性アドレスバッファ
408 内部電源スイッチ回路
410 セルフリフレッシュ回路
412 内部行アドレスカウンタ
450 メモリセルアレイ
452 行デコーダ
454 センス増幅器およびビット線アクセス回路
458 列アドレスデコーダ
462 データI/O回路
464 コマンドコントローラ
500 NANDゲート
502 インバータ
504 pチャネルトランジスタ
506 nチャネルトランジスタ
508 NANDゲート
510 インバータ
512 pチャネルトランジスタ
514 nチャネルトランジスタ
516 nチャネルパストランジスタ
518 nチャネルパストランジスタ
520 インバータ
542 pチャネルトランジスタ
544 pチャネルトランジスタ
546 nチャネルトランジスタ
548 nチャネルトランジスタ
552 pチャネルトランジスタ
554 nチャネルトランジスタ
600 高速アドレスバッファ
602 低出力アドレスバッファ
604 CMOS伝送ゲート
606 nチャネルトランジスタ
608 CMOS伝送ゲート
610 nチャネルトランジスタ
Claims (9)
- ダイナミックランダムアクセスメモリに使用するモード依存性論理回路であって、
通常動作モードで第1のアドレスを生成するための第1の回路と、
スリープ動作モードで前記第1のアドレスと論理的に同一の第2のアドレスを生成するための、前記第1の回路と論理的に同じ第2の回路であるとともに、前記第1の回路よりも低消費電力である第2の回路と、
前記第1のアドレスおよび前記第2のアドレスを受け取るためのセレクタと
を含み、
前記セレクタが、前記第1のアドレスを前記通常動作モードで通過させ、前記第2のアドレスを前記スリープ動作モードで通過させるモード依存性論理回路。 - 前記第2の回路が、前記第1の回路のトランジスタよりも高い閾値電圧を有するトランジスタを含む、請求項1に記載のモード依存性論理回路。
- 前記第1の回路が、前記第1の回路の前記トランジスタをVDDまたはVSSから前記スリープ動作モードで選択的に切り離すための第1の電源スイッチ回路を含む、請求項1に記載のモード依存性論理回路。
- 前記第2の回路が、前記第1および前記第2の回路の前記トランジスタをVDDおよびVSSからディープパワーダウン動作モードで選択的に切り離すための第2の電源スイッチ回路を含む、請求項3に記載のモード依存性論理回路。
- 前記第1の入力信号を供給するための少なくとも2本の第1の信号線と、前記第2の入力信号を供給するための少なくとも2本の第2の信号線とをさらに含み、前記第1および第2の信号線が、互いにインタリーブされる、請求項1に記載のモード依存性論理回路。
- 前記少なくとも2本の第1の信号線に結合された第1の駆動回路と、前記少なくとも2本の第2の信号線に結合された第2の駆動回路とをさらに含み、前記第2の駆動回路が、前記少なくとも2本の第2の信号線をVDDおよびVSSの一方に第1の動作モードで駆動する、請求項5に記載のモード依存性論理回路。
- 前記第1の電源スイッチ回路が、前記ディープパワーダウン動作モードにおいてVDDまたはVSSから前記第1の回路の前記トランジスタを切り離す、請求項4に記載のモード依存性論理回路。
- 前記第2の電源スイッチ回路が、前記ディープパワーダウン動作モードにおいて、前記第2の回路の前記トランジスタをVDDまたはVSSから選択的に切り離すために、アクティブ論理レベルのディープスリープ信号を受け取り、
前記ディープスリープ信号は、前記スリープ動作モードにおいて非アクティブ論理レベルである、請求項7に記載のモード依存性論理回路。 - 前記第1の電源スイッチ回路が、前記第1の回路の前記トランジスタをVDDまたはVSSから選択的に切り離すためにアクティブ論理レベルのスリープ信号を受け取り、
前記ディープスリープ信号およびスリープモード信号の少なくとも1つがアクティブ論理レベルであるとき、前記スリープ信号はアクティブ論理レベルである、請求項8に記載のモード依存性論理回路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/289,428 | 2005-11-30 | ||
US11/289,428 US7385858B2 (en) | 2005-11-30 | 2005-11-30 | Semiconductor integrated circuit having low power consumption with self-refresh |
PCT/CA2006/001953 WO2007062521A1 (en) | 2005-11-30 | 2006-11-30 | Semiconductor integrated circuit having low power consumption with self-refresh |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009517796A JP2009517796A (ja) | 2009-04-30 |
JP5006334B2 true JP5006334B2 (ja) | 2012-08-22 |
Family
ID=38087283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008542571A Expired - Fee Related JP5006334B2 (ja) | 2005-11-30 | 2006-11-30 | セルフリフレッシュを用いた低消費電力の半導体集積回路 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7385858B2 (ja) |
EP (2) | EP2395511B1 (ja) |
JP (1) | JP5006334B2 (ja) |
KR (1) | KR101257537B1 (ja) |
CN (1) | CN101317232B (ja) |
ES (2) | ES2417500T3 (ja) |
TW (1) | TWI421865B (ja) |
WO (1) | WO2007062521A1 (ja) |
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US7359271B2 (en) * | 2005-12-22 | 2008-04-15 | Infineon Technologies Ag | Gate induced drain leakage current reduction by voltage regulation of master wordline |
CN102194513B (zh) * | 2010-03-11 | 2013-07-31 | 复旦大学 | 自动调整存储器刷新操作频率的电路、方法及其存储器 |
US8605489B2 (en) * | 2011-11-30 | 2013-12-10 | International Business Machines Corporation | Enhanced data retention mode for dynamic memories |
JP2015076110A (ja) * | 2013-10-08 | 2015-04-20 | マイクロン テクノロジー, インク. | 半導体装置及びこれを備えるデータ処理システム |
KR102157772B1 (ko) | 2013-12-18 | 2020-09-18 | 에스케이하이닉스 주식회사 | 메모리 및 이를 포함하는 메모리 시스템 |
KR20170069207A (ko) * | 2014-10-10 | 2017-06-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 회로 기판, 및 전자 기기 |
US9319045B1 (en) * | 2014-12-29 | 2016-04-19 | Texas Instruments Incorporated | Method and apparatus for reducing gate leakage of low threshold transistors during low power mode in a multi-power-domain chip |
CN105810233B (zh) * | 2014-12-31 | 2018-05-15 | 北京兆易创新科技股份有限公司 | 一种低功耗存储器的装置和方法 |
JP6754579B2 (ja) * | 2015-02-09 | 2020-09-16 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、電子機器 |
US20170148503A1 (en) * | 2015-11-23 | 2017-05-25 | Nanya Technology Corporation | Dynamic random access memory circuit and voltage controlling method thereof |
KR102491651B1 (ko) * | 2015-12-14 | 2023-01-26 | 삼성전자주식회사 | 비휘발성 메모리 모듈, 그것을 포함하는 컴퓨팅 시스템, 및 그것의 동작 방법 |
US9917589B2 (en) * | 2016-02-02 | 2018-03-13 | Samsung Electronics Co., Ltd. | Transmitter circuit and receiver circuit for operating under low voltage |
KR102273002B1 (ko) | 2016-06-27 | 2021-07-06 | 애플 인크. | 조합된 높은 밀도, 낮은 대역폭 및 낮은 밀도, 높은 대역폭 메모리들을 갖는 메모리 시스템 |
TWI582580B (zh) * | 2016-08-30 | 2017-05-11 | 華邦電子股份有限公司 | 記憶體儲存裝置及其操作方法 |
US10839887B2 (en) * | 2016-10-31 | 2020-11-17 | Intel Corporation | Applying chip select for memory device identification and power management control |
KR20190061853A (ko) * | 2017-11-28 | 2019-06-05 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그의 동작 방법 |
US11398258B2 (en) * | 2018-04-30 | 2022-07-26 | Invensas Llc | Multi-die module with low power operation |
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-
2005
- 2005-11-30 US US11/289,428 patent/US7385858B2/en active Active
-
2006
- 2006-11-13 TW TW095141969A patent/TWI421865B/zh not_active IP Right Cessation
- 2006-11-30 EP EP11007385.5A patent/EP2395511B1/en active Active
- 2006-11-30 KR KR1020087015253A patent/KR101257537B1/ko not_active IP Right Cessation
- 2006-11-30 WO PCT/CA2006/001953 patent/WO2007062521A1/en active Application Filing
- 2006-11-30 EP EP06817678A patent/EP1955333B1/en active Active
- 2006-11-30 ES ES06817678T patent/ES2417500T3/es active Active
- 2006-11-30 JP JP2008542571A patent/JP5006334B2/ja not_active Expired - Fee Related
- 2006-11-30 CN CN2006800447432A patent/CN101317232B/zh active Active
- 2006-11-30 ES ES11007385T patent/ES2426480T3/es active Active
Also Published As
Publication number | Publication date |
---|---|
EP2395511A2 (en) | 2011-12-14 |
EP2395511A3 (en) | 2012-03-21 |
TW200731260A (en) | 2007-08-16 |
EP1955333B1 (en) | 2013-04-03 |
US20070121406A1 (en) | 2007-05-31 |
ES2417500T3 (es) | 2013-08-08 |
EP2395511B1 (en) | 2013-07-17 |
US7385858B2 (en) | 2008-06-10 |
CN101317232B (zh) | 2012-09-05 |
TWI421865B (zh) | 2014-01-01 |
ES2426480T3 (es) | 2013-10-23 |
KR101257537B1 (ko) | 2013-04-23 |
EP1955333A4 (en) | 2009-07-08 |
KR20080072063A (ko) | 2008-08-05 |
WO2007062521A1 (en) | 2007-06-07 |
EP1955333A1 (en) | 2008-08-13 |
CN101317232A (zh) | 2008-12-03 |
JP2009517796A (ja) | 2009-04-30 |
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