JP5005499B2 - プラズマ反応装置部品の製造方法 - Google Patents
プラズマ反応装置部品の製造方法 Download PDFInfo
- Publication number
- JP5005499B2 JP5005499B2 JP2007279943A JP2007279943A JP5005499B2 JP 5005499 B2 JP5005499 B2 JP 5005499B2 JP 2007279943 A JP2007279943 A JP 2007279943A JP 2007279943 A JP2007279943 A JP 2007279943A JP 5005499 B2 JP5005499 B2 JP 5005499B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- annealing
- yttria
- temperature
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
- C04B35/505—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
- C04B2235/663—Oxidative annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/554,482 US7964818B2 (en) | 2006-10-30 | 2006-10-30 | Method and apparatus for photomask etching |
US11/554,482 | 2006-10-30 | ||
US11/766,626 US7919722B2 (en) | 2006-10-30 | 2007-06-21 | Method for fabricating plasma reactor parts |
US11/766,626 | 2007-06-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012117572A Division JP2012199567A (ja) | 2006-10-30 | 2012-05-23 | プラズマ反応装置部品の製造方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008141181A JP2008141181A (ja) | 2008-06-19 |
JP5005499B2 true JP5005499B2 (ja) | 2012-08-22 |
Family
ID=39020753
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007279943A Expired - Fee Related JP5005499B2 (ja) | 2006-10-30 | 2007-10-29 | プラズマ反応装置部品の製造方法 |
JP2012117572A Pending JP2012199567A (ja) | 2006-10-30 | 2012-05-23 | プラズマ反応装置部品の製造方法及び装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012117572A Pending JP2012199567A (ja) | 2006-10-30 | 2012-05-23 | プラズマ反応装置部品の製造方法及び装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7919722B2 (ko) |
EP (1) | EP1921053A1 (ko) |
JP (2) | JP5005499B2 (ko) |
KR (2) | KR100958757B1 (ko) |
TW (2) | TWI397512B (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7919722B2 (en) * | 2006-10-30 | 2011-04-05 | Applied Materials, Inc. | Method for fabricating plasma reactor parts |
KR100963287B1 (ko) * | 2008-02-22 | 2010-06-11 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
JPWO2009145299A1 (ja) | 2008-05-29 | 2011-10-13 | 富士フイルム株式会社 | セラミド分散物 |
US8658541B2 (en) * | 2010-01-15 | 2014-02-25 | Applied Materials, Inc. | Method of controlling trench microloading using plasma pulsing |
JP6100691B2 (ja) * | 2010-10-28 | 2017-03-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高純度アルミニウムコーティングの硬質陽極酸化処理 |
WO2012177900A1 (en) | 2011-06-22 | 2012-12-27 | Research Triangle Institute, International | Bipolar microelectronic device |
CN103796413B (zh) * | 2012-11-01 | 2017-05-03 | 中微半导体设备(上海)有限公司 | 等离子反应器及制作半导体基片的方法 |
DE102011054718B4 (de) * | 2011-10-21 | 2014-02-13 | Hitachi Power Europe Gmbh | Verfahren zur Erzeugung einer Spannungsverminderung in errichteten Rohrwänden eines Dampferzeugers |
US9177826B2 (en) * | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
US9090046B2 (en) | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
US9604249B2 (en) | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
US10727092B2 (en) * | 2012-10-17 | 2020-07-28 | Applied Materials, Inc. | Heated substrate support ring |
US9865434B2 (en) | 2013-06-05 | 2018-01-09 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US9583369B2 (en) * | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
CN104701125A (zh) * | 2013-12-05 | 2015-06-10 | 中微半导体设备(上海)有限公司 | 气体分布板 |
US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
JP6515537B2 (ja) * | 2014-04-08 | 2019-05-22 | セイコーエプソン株式会社 | 有機el装置の製造方法、有機el装置、電子機器 |
US9978632B2 (en) * | 2014-06-13 | 2018-05-22 | Applied Materials, Inc. | Direct lift process apparatus |
US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
KR102082602B1 (ko) * | 2018-03-08 | 2020-04-23 | 토토 가부시키가이샤 | 복합 구조물 및 복합 구조물을 구비한 반도체 제조 장치 그리고 디스플레이 제조 장치 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4312993A (en) | 1979-09-10 | 1982-01-26 | Sws Silicones Corporation | Silylated polyethers |
US4732622A (en) | 1985-10-10 | 1988-03-22 | United Kingdom Atomic Energy Authority | Processing of high temperature alloys |
US4755492A (en) | 1986-10-06 | 1988-07-05 | General Electric Company | Yttrium oxide ceramic body |
US5188676A (en) | 1991-08-23 | 1993-02-23 | General Electric Company | Method for annealing zircaloy to improve nodular corrosion resistance |
US5417780A (en) | 1993-10-28 | 1995-05-23 | General Electric Company | Process for improving corrosion resistance of zirconium or zirconium alloy barrier cladding |
JP2001244246A (ja) * | 2000-02-29 | 2001-09-07 | Taiheiyo Cement Corp | フォーカスリング |
US6853141B2 (en) | 2002-05-22 | 2005-02-08 | Daniel J. Hoffman | Capacitively coupled plasma reactor with magnetic plasma control |
JP2002068838A (ja) | 2000-08-23 | 2002-03-08 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材およびその製造方法 |
JP2002255647A (ja) | 2001-02-27 | 2002-09-11 | Nihon Ceratec Co Ltd | 酸化イットリウム焼結体およびウエハ保持具 |
JP4683783B2 (ja) * | 2001-08-02 | 2011-05-18 | コバレントマテリアル株式会社 | 半導体製造装置用耐プラズマ部材の製造方法 |
JP3874278B2 (ja) | 2002-12-25 | 2007-01-31 | Tdk株式会社 | 誘電体磁器組成物、電子部品およびこれらの製造方法 |
JP2004269350A (ja) | 2003-02-17 | 2004-09-30 | Toshiba Ceramics Co Ltd | Y2o3焼結体及びその製造方法 |
KR100599998B1 (ko) * | 2003-02-17 | 2006-07-13 | 도시바세라믹스가부시키가이샤 | 산화이트륨 소결체 및 그 제조방법 |
JP2004292270A (ja) | 2003-03-27 | 2004-10-21 | Kyocera Corp | 耐食性部材及びその製造方法 |
JP4679366B2 (ja) | 2003-07-29 | 2011-04-27 | 京セラ株式会社 | Y2o3質焼結体、耐食性部材およびその製造方法並びに半導体・液晶製造装置用部材 |
JP2005170728A (ja) | 2003-12-10 | 2005-06-30 | Toshiba Ceramics Co Ltd | Y2o3焼結体およびその製造方法 |
US7220497B2 (en) * | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
US20060243358A1 (en) | 2004-03-23 | 2006-11-02 | David Colburn | Zirconium alloys with improved corrosion resistance and method for fabricating zirconium alloys with improved corrosion |
JP4780932B2 (ja) | 2004-05-25 | 2011-09-28 | 京セラ株式会社 | 耐食性部材とその製造方法および半導体・液晶製造装置用部材 |
JP4798693B2 (ja) | 2004-06-07 | 2011-10-19 | コバレントマテリアル株式会社 | プラズマ処理装置用イットリアセラミックス部品及びその製造方法 |
US20060000802A1 (en) | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US20060043067A1 (en) * | 2004-08-26 | 2006-03-02 | Lam Research Corporation | Yttria insulator ring for use inside a plasma chamber |
JP2006186306A (ja) * | 2004-09-30 | 2006-07-13 | Toshiba Ceramics Co Ltd | ガス拡散プレートおよびその製造方法 |
US7919722B2 (en) * | 2006-10-30 | 2011-04-05 | Applied Materials, Inc. | Method for fabricating plasma reactor parts |
-
2007
- 2007-06-21 US US11/766,626 patent/US7919722B2/en active Active
- 2007-08-20 TW TW096130753A patent/TWI397512B/zh not_active IP Right Cessation
- 2007-08-20 TW TW102116385A patent/TWI500592B/zh active
- 2007-09-19 EP EP07018393A patent/EP1921053A1/en not_active Withdrawn
- 2007-10-29 KR KR1020070108776A patent/KR100958757B1/ko active IP Right Grant
- 2007-10-29 JP JP2007279943A patent/JP5005499B2/ja not_active Expired - Fee Related
-
2009
- 2009-12-28 KR KR1020090131531A patent/KR101341035B1/ko active IP Right Grant
-
2012
- 2012-05-23 JP JP2012117572A patent/JP2012199567A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TW201335105A (zh) | 2013-09-01 |
KR20080039265A (ko) | 2008-05-07 |
KR100958757B1 (ko) | 2010-05-18 |
TWI500592B (zh) | 2015-09-21 |
US7919722B2 (en) | 2011-04-05 |
JP2012199567A (ja) | 2012-10-18 |
EP1921053A1 (en) | 2008-05-14 |
TW200829534A (en) | 2008-07-16 |
KR20100012855A (ko) | 2010-02-08 |
JP2008141181A (ja) | 2008-06-19 |
US20080099148A1 (en) | 2008-05-01 |
KR101341035B1 (ko) | 2013-12-12 |
TWI397512B (zh) | 2013-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5005499B2 (ja) | プラズマ反応装置部品の製造方法 | |
US7964818B2 (en) | Method and apparatus for photomask etching | |
JP7313528B2 (ja) | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド | |
US7909961B2 (en) | Method and apparatus for photomask plasma etching | |
JP6014661B2 (ja) | プラズマ処理装置、及びプラズマ処理方法 | |
KR101445153B1 (ko) | 포토마스크 플라즈마 에칭시 인시츄 챔버 건식 세정을 위한 방법 및 장치 | |
US20070235136A1 (en) | Reduced contaminant gas injection system and method of using | |
JP2012134535A (ja) | 遊離炭素の除去方法 | |
US10629427B2 (en) | Bevel etch profile control | |
JP2012507174A (ja) | 低い浸食感度を有するプロセスキット | |
US20190267217A1 (en) | Plasma processing method | |
US11557485B2 (en) | Plasma processing method and plasma processing apparatus | |
KR20210032904A (ko) | 실리콘 산화막을 에칭하는 방법 및 플라즈마 처리 장치 | |
JP5745203B2 (ja) | プラズマ反応器部品の製造方法 | |
JP2006128529A (ja) | 成膜装置、成膜方法及び記憶媒体 | |
JPH0370130A (ja) | エッチング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101029 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101109 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110209 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110222 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110309 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110314 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110408 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110413 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110509 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120124 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120329 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120424 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120523 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150601 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5005499 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |