JP6100691B2 - 高純度アルミニウムコーティングの硬質陽極酸化処理 - Google Patents
高純度アルミニウムコーティングの硬質陽極酸化処理 Download PDFInfo
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- JP6100691B2 JP6100691B2 JP2013536634A JP2013536634A JP6100691B2 JP 6100691 B2 JP6100691 B2 JP 6100691B2 JP 2013536634 A JP2013536634 A JP 2013536634A JP 2013536634 A JP2013536634 A JP 2013536634A JP 6100691 B2 JP6100691 B2 JP 6100691B2
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- aluminum
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- plasma
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 81
- 229910052782 aluminium Inorganic materials 0.000 title claims description 80
- 239000011248 coating agent Substances 0.000 title claims description 66
- 238000000576 coating method Methods 0.000 title claims description 66
- 238000007743 anodising Methods 0.000 title claims description 4
- 238000011282 treatment Methods 0.000 title description 2
- 238000012545 processing Methods 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 37
- 238000005498 polishing Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 230000007935 neutral effect Effects 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 29
- 230000008569 process Effects 0.000 description 22
- 239000010410 layer Substances 0.000 description 15
- 238000002048 anodisation reaction Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910000755 6061-T6 aluminium alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- -1 porous aluminum Chemical compound 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
本開示は、概して、プラズマ処理チャンバ装置内で使用するためのツール及びコンポーネントに関する。より具体的には、本開示は、腐食性のプラズマ環境に対して耐性のあるプラズマ処理チャンバコンポーネントの製造方法に関する。
半導体処理には、多くの異なる化学的及び物理的プロセスが含まれ、これによって微細な集積回路が基板上に作られる。集積回路を構成する材料の層は、化学蒸着、物理蒸着、エピタキシャル成長等によって作られる。材料の層のいくつかは、フォトレジストマスク及びウェット又はドライエッチング技術を用いてパターニングされる。集積回路を形成するために利用される基板は、シリコン、ガリウムヒ素、リン化インジウム、ガラス、又は他の適切な材料が可能である。
Claims (9)
- アルミニウム本体であって、前記本体の外面上に研磨されたアルミニウムコーティングを配置したアルミニウム本体と、
前記アルミニウムコーティング上に配置された硬質陽極酸化コーティングを含み、研磨されたアルミニウムコーティングは、0.2032μmRa又はより平滑な仕上げ面に研磨されている、プラズマ処理装置内で使用するためのチャンバコンポーネント。 - 研磨されたアルミニウムコーティングは、高純度アルミニウムの層を含む請求項1記載のチャンバコンポーネント。
- 基板を支持するように適合された基板台座部を有するプラズマ処理チャンバ内で使用するための装置であって、
貫通して形成され、プラズマの荷電種及び中性種の空間分布を制御するように構成された複数の開口部を有するプレートであって、前記プレートは、前記プレートの外面上に配置されたアルミニウムの研磨層と、前記アルミニウム層上に配置された硬質陽極酸化コーティングを有し、前記アルミニウム層は、0.2032μmRa又はより平滑な仕上げ面に研磨されているプレートを含む装置。 - 台座部の上方でプレートを支持する複数の支持脚部を含む請求項3記載の装置。
- アルミニウムの研磨層は、高純度アルミニウムの層を含む請求項3記載の装置。
- プラズマ処理環境内で使用するためのチャンバコンポーネントの製造方法であって、
アルミニウムからチャンバコンポーネントの本体を形成する工程と、
本体の表面を研磨する工程と、
本体上にアルミニウムの層を堆積させる工程と、
アルミニウム層の表面を研磨する工程であって、アルミニウム層の表面を研磨する工程は、0.2032μmRa又はより平滑な仕上げ面にアルミニウム層の表面を研磨する工程を含む工程と、
アルミニウム層を硬質陽極酸化処理する工程を含む方法。 - アルミニウム層の表面を研磨する工程は、アルミニウム層の表面を非機械的に研磨する工程を含む請求項6記載の方法。
- アルミニウムの層を堆積させる工程は、電着又はイオン蒸着(IVD)法の少なくとも1つを用いてアルミニウムの層を堆積させる工程を含む請求項6記載の方法。
- 非堆積材料によって硬質陽極酸化層を機械的にクリーニングする工程を含む請求項6記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40790110P | 2010-10-28 | 2010-10-28 | |
US61/407,901 | 2010-10-28 | ||
PCT/US2011/054225 WO2012057963A2 (en) | 2010-10-28 | 2011-09-30 | High purity aluminum coating hard anodization |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013542612A JP2013542612A (ja) | 2013-11-21 |
JP6100691B2 true JP6100691B2 (ja) | 2017-03-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013536634A Active JP6100691B2 (ja) | 2010-10-28 | 2011-09-30 | 高純度アルミニウムコーティングの硬質陽極酸化処理 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120103526A1 (ja) |
JP (1) | JP6100691B2 (ja) |
KR (1) | KR101992702B1 (ja) |
CN (2) | CN107731648B (ja) |
TW (1) | TWI576015B (ja) |
WO (1) | WO2012057963A2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US9151408B2 (en) * | 2012-02-07 | 2015-10-06 | Lam Research Corporation | Method of polishing a metal surface of a barrier door of a gate valve used in a semiconductor cluster tool architecture |
US9048190B2 (en) * | 2012-10-09 | 2015-06-02 | Applied Materials, Inc. | Methods and apparatus for processing substrates using an ion shield |
US9337002B2 (en) | 2013-03-12 | 2016-05-10 | Lam Research Corporation | Corrosion resistant aluminum coating on plasma chamber components |
JP6449224B2 (ja) | 2013-03-14 | 2019-01-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板上の高純度アルミニウムトップコート |
US9761416B2 (en) * | 2013-03-15 | 2017-09-12 | Applied Materials, Inc. | Apparatus and methods for reducing particles in semiconductor process chambers |
US9123651B2 (en) | 2013-03-27 | 2015-09-01 | Lam Research Corporation | Dense oxide coated component of a plasma processing chamber and method of manufacture thereof |
US9624593B2 (en) * | 2013-08-29 | 2017-04-18 | Applied Materials, Inc. | Anodization architecture for electro-plate adhesion |
US9663870B2 (en) | 2013-11-13 | 2017-05-30 | Applied Materials, Inc. | High purity metallic top coat for semiconductor manufacturing components |
US9551070B2 (en) * | 2014-05-30 | 2017-01-24 | Applied Materials, Inc. | In-situ corrosion resistant substrate support coating |
US10262839B2 (en) * | 2016-06-14 | 2019-04-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Aluminum apparatus with aluminum oxide layer and method for forming the same |
GB2570268A (en) * | 2017-07-27 | 2019-07-24 | Semsysco Gmbh | System for chemical and/or electrolytic surface treatment |
CN110544615B (zh) * | 2019-08-28 | 2022-08-19 | 江苏鲁汶仪器有限公司 | 一种等离子体刻蚀系统 |
TWI746222B (zh) * | 2020-10-21 | 2021-11-11 | 財團法人工業技術研究院 | 鍍膜設備 |
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JPH05299385A (ja) * | 1992-02-20 | 1993-11-12 | Matsushita Electron Corp | プラズマエッチング装置用電極およびそれを用いたプラズマエッチング装置 |
JP3126561B2 (ja) * | 1993-09-09 | 2001-01-22 | 東京エレクトロン株式会社 | 真空処理装置 |
KR100260587B1 (ko) * | 1993-06-01 | 2000-08-01 | 히가시 데쓰로 | 정전척 및 그의 제조방법 |
JPH08319573A (ja) * | 1995-05-22 | 1996-12-03 | Nitsukooshi Prod Kk | プラズマcvd及びエッチング用陽極酸化アルミニウム電極 |
JPH09217197A (ja) * | 1995-12-07 | 1997-08-19 | Tadahiro Omi | アルミナ膜形成方法及びアルミニウム製品 |
US5723221A (en) * | 1996-04-26 | 1998-03-03 | Formica Corporation | Aluminous press plate and process for producing same |
US6007592A (en) * | 1996-11-14 | 1999-12-28 | Nissan Chemical Industries, Ltd. | Polishing composition for aluminum disk and polishing process therewith |
US6182603B1 (en) * | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
JP4068742B2 (ja) * | 1998-12-11 | 2008-03-26 | 株式会社神戸製鋼所 | 耐熱割れ性及び耐食性に優れた半導体製造装置用陽極酸化皮膜被覆部材の製造方法 |
US20020142612A1 (en) * | 2001-03-30 | 2002-10-03 | Han-Ming Wu | Shielding plate in plasma for uniformity improvement |
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JP2003224077A (ja) * | 2002-01-30 | 2003-08-08 | Tokyo Electron Ltd | プラズマ処理装置、電極部材、バッフル板の製造方法、処理装置、および、表面処理方法 |
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-
2011
- 2011-09-30 JP JP2013536634A patent/JP6100691B2/ja active Active
- 2011-09-30 KR KR1020137012019A patent/KR101992702B1/ko active IP Right Grant
- 2011-09-30 CN CN201710947980.XA patent/CN107731648B/zh active Active
- 2011-09-30 WO PCT/US2011/054225 patent/WO2012057963A2/en active Application Filing
- 2011-09-30 CN CN2011800516537A patent/CN103189963A/zh active Pending
- 2011-10-07 TW TW100136558A patent/TWI576015B/zh active
- 2011-10-19 US US13/276,493 patent/US20120103526A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2012057963A2 (en) | 2012-05-03 |
US20120103526A1 (en) | 2012-05-03 |
TW201238408A (en) | 2012-09-16 |
CN103189963A (zh) | 2013-07-03 |
KR20140009178A (ko) | 2014-01-22 |
WO2012057963A3 (en) | 2012-06-14 |
KR101992702B1 (ko) | 2019-06-25 |
TWI576015B (zh) | 2017-03-21 |
JP2013542612A (ja) | 2013-11-21 |
CN107731648A (zh) | 2018-02-23 |
CN107731648B (zh) | 2020-02-14 |
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