GB2570268A - System for chemical and/or electrolytic surface treatment - Google Patents

System for chemical and/or electrolytic surface treatment Download PDF

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Publication number
GB2570268A
GB2570268A GB1712070.0A GB201712070A GB2570268A GB 2570268 A GB2570268 A GB 2570268A GB 201712070 A GB201712070 A GB 201712070A GB 2570268 A GB2570268 A GB 2570268A
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United Kingdom
Prior art keywords
process fluid
anode
substrate
enclosure
surface treatment
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GB1712070.0A
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GB201712070D0 (en
Inventor
Gleissner Andreas
Knoll Oliver
Ötzlinger Herbert
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Semsysco GmbH
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Semsysco GmbH
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Priority to GB1712070.0A priority Critical patent/GB2570268A/en
Publication of GB201712070D0 publication Critical patent/GB201712070D0/en
Publication of GB2570268A publication Critical patent/GB2570268A/en
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

An anode enclosure system 10 for chemical and/or electrolytic surface treatment of a substrate 30 in a process fluid, a device for chemical and/or electrolytic surface treatment of a substrate in a process fluid, and a distribution method for chemical and/or electrolytic surface treatment of a substrate in a process fluid are described. The anode enclosure system 10 comprises an enclosure body 27, a distribution body 21, a ventilation opening 26 and a process fluid opening 23. The enclosure body 27 encloses an anode 22 and the distribution body 21 is configured to direct a flow of process fluid and/or electrical current to the substrate 30 and forms an element of the enclosure body 21. The ventilation opening 26 and the process fluid opening 23 are arranged in the enclosure body 21 and the ventilation opening 26 is configured as an outlet for gas generated during the surface treatment. The process fluid opening is configured as an outlet for the process fluid. A negative pressure unit to create a negative pressure within the enclosure body 21 may also be included.

Description

The invention relates to an anode enclosure system for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a device for chemical and/or electrolytic surface treatment of a substrate in a process fluid, and a distribution method for chemical and/or electrolytic surface treatment of a substrate in a process fluid.
BACKGROUND OF THE INVENTION
In the semiconductor industry, various processes can be used to deposit or remove materials on or from the surface of wafers.
For example, electrochemical deposition (ECD) or electrochemical mechanical deposition (ECMD) processes can be used to deposit conductors, such as copper, on previously patterned wafer surfaces to fabricate device interconnect structures.
Chemical mechanical polishing (CMP) is commonly used for a material removal step. Another technique, electropolishing or electroetching, can also be used to remove excess materials from the surface of the wafers.
Electrochemical (or electrochemical mechanical) deposition of materials on wafer surfaces or electrochemical (or electrochemical mechanical) removal of materials from the wafer surfaces are collectively called electrochemical processing. Electrochemical, chemical and/or electrolytic surface treatment techniques may comprise electropolishing (or electroetching), electrochemical mechanical polishing (or electrochemical mechanical etching), electrochemical deposition and electrochemical mechanical deposition. All techniques utilize a process fluid.
Chemical and/or electrolytic surface treatment techniques involve the following steps. A substrate to be processed is attached to a substrate holder, immersed into an electrolytic process fluid and serves as a cathode. An electrode is immersed into the process fluid and serves as an anode. A direct current is applied to the process fluid and dissociates positively charged metal ions at the anode. The ions then migrate to the cathode, where they plate the substrate attached to the cathode.
A problem in such a process is that as the substrate, e.g. a wafer, is lowered into the process solution, gas bubbles may be trapped under the wafer. If the process is a deposition process for copper, for example, such bubbles prevent copper from depositing onto the bubble-containing regions on the wafer surface, giving rise to unplated or underplated areas, which represent defects in the plated material. Such defects reduce the uniformity of the surface treatment and reliability of the interconnect structures. Similarly, in an electropolishing process, trapped bubbles retard material removal from the regions containing the bubbles, giving rise to non-uniformities and defects and cause reliability problems.
US 2004/182712 Al hereto discloses a pre-wetting method and system for preventing gas bubble formation on a selected region of a wafer surface as the surface is brought in contact with a process solution for an electrochemical process. During the process, the wafer surface is initially brought in proximity of the surface of the process solution. Next, a process solution flow is directed towards the selected region of the wafer surface for a predetermined time. In the following step, the selected region of the wafer surface is contacted with the process solution flow for the predetermined time, and the wafer surface is immersed into the process solution for electrochemical processing.
However, such pre-wetting approach does not completely solve above mentioned gas bubble formation problem.
SUMMARY OF THE INVENTION
Hence, there may be a need to provide an improved system for chemical and/or electrolytic surface treatment of a substrate in a process fluid, which improves a uniform surface treatment of a substrate.
The problem of the present invention is solved by the subject-matters of the independent claims, wherein further embodiments are incorporated in the dependent claims. It should be noted that the aspects of the invention described in the following apply also to the anode enclosure system for chemical and/or electrolytic surface treatment of a substrate in a process fluid, the device for chemical and/or electrolytic surface treatment of a substrate in a process fluid, and the distribution method for chemical and/or electrolytic surface treatment of a substrate in a process fluid.
According to the present invention, an anode enclosure system for chemical and/or electrolytic surface treatment of a substrate in a process fluid is presented.
The chemical and/or electrolytic surface treatment may be any material deposition, galvanized coating, chemical or electrochemical etching, anodal oxidation, metal separation or the like.
The substrate may comprise a conductor plate, a semi-conductor substrate, a film substrate, an essentially plate-shaped, metal or metallized workpiece or the like. A surface of the surface to be treated may be at least partially masked or unmasked.
The anode enclosure system for chemical and/or electrolytic surface treatment comprises an enclosure body, a distribution body, a ventilation opening and a process fluid opening.
The enclosure body is configured to enclose an anode. The enclosure body may be understood as a housing for the anode. It may surround the anode and in particular confine and/or protect the anode from the environment.
The distribution body forms an element of the enclosure body. This may be understood in that the distribution body is a part or component of the enclosure body. The distribution body may be part of an outer periphery of the enclosure body. In an example, the distribution body forming an element of the enclosure body is a wall portion of the enclosure body. The distribution body may be configured to direct a flow of process fluid and/or electrical current to the substrate. The distribution body may correspond to the substrate to be treated in particular in view of its shape and size. The distribution system may be a vertical distribution system with a vertical plating chamber, in which the substrate is inserted vertically. The distribution system may also be a horizontal distribution system with a horizontal plating chamber, in which the substrate is inserted horizontally.
The ventilation opening and the process fluid opening are arranged in the enclosure body, which may be understood in that they are part of the enclosure body and form passages through the enclosure body. The process fluid opening is configured as an outlet for the process fluid.
The ventilation opening is configured as an outlet for gas generated during the surface treatment. The ventilation opening may allow a permanent and continuous ventilation of the anode enclosure system and the anode and thereby a permanent discharge of air from the anode enclosure system and the anode. The ventilation opening may also allow an intermittent and non-continuous ventilation of the anode enclosure system and the anode and thereby an intgnnjttgnt discharge of air from the anode enclosure system and the anode. The ventilation opening may essentially prevent any flow of gas from the anode to the substrate and thereby prevent a gas bubble formation.
As a result, the system according to the invention may prevent or at least reduce an introduction of air into components for chemical and/or electrolytic surface treatment, as e.g. the distribution body, the anode and/or the anode enclosure comprising the distribution body and the anode. Without this introduction of air, a more uniform surface treatment of the substrate can be achieved.
Further, the following disadvantages of an introduction of air can be avoided: a detrimental oxidation of particles of the process fluid, a so-called bubble shielding of the substrate, a drying of the components for chemical and/or electrolytic surface treatment, which may lead to a detrimental crystallization of particles of the process fluid, etc.. Consequently, the anode enclosure system for chemical and/or electrolytic surface treatment according to the invention allows a reliable and more uniform material deposition on the substrate.
In an example, the anode enclosure system further comprises at least an anode. In an example, the anode is a multi-zone anode.
In an example, the distribution body comprises a plurality of distribution openings. The distribution openings may be directed in the direction of the substrate. The substrate may act as a counter electrode to the anode or, in other words, as a cathode. The plurality of distribution openings may be formed as a nozzle array, which may be an area or field of several or a plurality of nozzles. It may comprise outlet openings to direct a flow of process fluid to the substrate and/or backflow openings to receive a backflow of process fluid from the substrate. Above mentioned distribution openings may further improve a uniform flow of process fluid and/or electrical current to the substrate and thereby for a uniform material deposition on the substrate.
In an example, the anode enclosure system further comprises only one spatially limited ventilation opening. A spatially limited ventilation opening may be understood as a recess or a hole in a boundary or wall of the enclosure body. The enclosure body may be a cuboid with the bottom surface, a top surface, a front surface, a rear surface and two lateral surfaces. The front and the rear surfaces maybe larger than the other surfaces. The spatially limited ventilation opening may not be an entirely open surface or side of the e.g. cuboid enclosure body, but smaller than one of its surfaces or sides. In an example, the ventilation opening is smaller than a base area of the enclosure body. The base area may be understood as a bottom surface of the enclosure body. In particular, the ventilation opening is smaller than about 5 to 50 %, preferably smaller than about 10 to 30 % and more preferably smaller than about 20 % of the base area of the enclosure body. In an example, the ventilation opening is arranged at essentially the highest point of the enclosure body when the anode is operating.
In an example, the at least one process fluid opening is arranged at a rear side of the enclosure body opposite to the wall portion of the enclosure body forming the distribution body. In another example, the process fluid opening is arranged at a lateral side of the enclosure body. In an example, the process fluid opening is configured for a uniform flow of process fluid at the distribution body. In an example, the anode enclosure system comprises several process fluid openings. Above mentioned embodiments of the process fluid opening/s) may improve a uniform flow of process fluid at the distribution body and thereby for a uniform deposition.
In an example, the process fluid opening is connected to a pumping means configured to pump the process fluid. The pumping means may be configured to continuously and permanently circulate the process fluid. The pumping means may be a pump.
In an example, the anode enclosure system further comprises a negative pressure unit configured to generate a negative pressure within the enclosure body. The negative pressure unit may be the pumping means. The negative pressure may be configured to influence the process fluid flow to the substrate to make the deposition more uniform and homogenous.
In an example, the anode enclosure system further comprises an oscillator unit configured to generate a sound field directed to the ventilation opening. The oscillator may be configured to support the ventilation and discharge of air from the anode enclosure system acoustically. The oscillator may be arranged at the bottom of the anode enclosure system.
According to the present invention, also a device for chemical and/or electrolytic surface treatment of a substrate in a process fluid is presented. The device for chemical and/or electrolytic surface treatment comprises an anode enclosure system for chemical and/or electrolytic surface treatment of a substrate in a process fluid as described above and an anode. The anode enclosure system is configured to hold, receive or house the anode. In an example, the anode is a multi-zone anode.
The device for chemical and/or electrolytic surface treatment may further comprise a substrate holder. The substrate holder may be configured to hold one or two substrates (one substrate on each side of the substrate holder).
The device for chemical and/or electrolytic surface treatment may further comprise a power supply. The device for chemical and/or electrolytic surface treatment may further comprise a process fluid supply.
According to the present invention, also a distribution method for chemical and/or electrolytic surface treatment of a substrate in a process fluid is presented. The method for chemical and/or electrolytic surface treatment comprises the following steps, not necessarily in this order:
a) providing an anode enclosure system with an enclosure body, a distribution body, a ventilation opening and a process fluid opening, wherein the enclosure body is configured to enclose an anode, the distribution body is configured to direct a flow of process fluid and/or electrical current to the substrate and forms an element of the enclosure body, the ventilation opening and the process fluid opening are arranged in the enclosure body, the ventilation opening is configured as an outlet for gas generated during the surface treatment, and the process fluid opening is configured as an outlet for the process fluid, and
b) removing gas generated during the surface treatment at least partially by means of the ventilation opening.
As a result, the invention relates to a method for chemical and/or electrolytic surface treatment, which allows, improves and/or facilitates a uniform surface treatment of the substrate, a uniform deposition rate, a formation of a uniform layer on the substrate and/or the like.
The systems, devices and methods according to the invention may be suitable for processing structured semi-conductor substrates, conductor plates, film substrates, an entire surface of planar metal and metallized substrates, etc. The systems, devices and methods may also be used for a production of large surface photoelectric panels for solar energy generation, large-scale monitor panels or the like.
It shall be understood that the system, the device, and the method for chemical and/or electrolytic surface treatment of a substrate in a process fluid according to the independent claims have similar and/or identical preferred embodiments, in particular, as defined in the dependent claims. It shall be understood further that a preferred embodiment of the invention can also be any combination of the dependent claims with the respective independent claim.
These and other aspects of the present invention will become apparent from and be elucidated with reference to the embodiments described hereinafter.
BRIEF DESCRIPTION OF THE DRAWINGS
Exemplary embodiments of the invention will be described in the following with reference to the accompanying drawings:
Figure 1 shows schematically and exemplarily an embodiment of a device for chemical and/or electrolytic surface treatment of a substrate in a process fluid according to the invention.
Figure 2 shows schematically and exemplarily an embodiment of a substrate holder holding two substrates.
Figure 3 shows schematically and exemplarily an embodiment of a device for chemical and/or electrolytic surface treatment and an anode enclosure system for chemical and/or electrolytic surface treatment of a substrate in a process fluid according to the invention.
Figure 4 shows basic steps of an example of a distribution method for chemical and/or electrolytic surface treatment of a substrate in a process fluid according to the invention.
DETAILED DESCRIPTION OF EMBODIMENTS
Figure 1 shows schematically and exemplarily an embodiment of a device 100 for chemical and/or electrolytic surface treatment of a substrate 30 in a process fluid according to the invention. The device 100 for chemical and/or electrolytic surface treatment comprises a substrate holder 20 and two vertical anode enclosure systems 10 for chemical and/or electrolytic surface treatment of the substrate 30 in a process fluid.
The substrate holder 20 is also shown in Figure 2. It is configured to hold one or two substrates 30, one substrate 30 on each side of the substrate holder 20. The substrate holder 20 here holds rectangular substrates 30 with rounded corners and a size of e.g. 370 x 470 mm. Of course, the device 100 for chemical and/or electrolytic surface treatment may also be used with a substrate holder 20, which is configured to hold only one substrate 30 for single or dual side surface treatment in a preferably vertical arrangement. Of course, the substrate holder would also work for round substrates such as wafers.
The substrate 30 may be an essentially plate-shaped workpiece for the production of electric or electronic components, which is mechanically fixed in the substrate holder 20, and the surface of which to be treated is bathed in the process fluid as the treatment medium coming from a distribution body 21. In a special case, the substrate 30 may be a masked or unmasked conductor plate, a semi-conductor substrate, or a film substrate, or even any metal or metallized workpiece having an approximately planar surface.
The anode enclosure systems 10 for chemical and/or electrolytic surface treatment of the substrate 30 in the process fluid as shown in Figures 1 and 3 comprise each an enclosure body 27, a distribution body 21, a ventilation opening 26 and a process fluid opening 23.
The enclosure body 27 can be understood as housing for an anode 22. It surrounds, confines and protects the anode 22 from the environment. The anode 22 is here a multi-zone anode.
The distribution body 21 forms an element of the enclosure body 27, which means that the distribution body 21 is here a lateral wall of the enclosure body 27.
The distribution body 21 produces targeted flow and current density patterns for the chemical and/or electrolytic surface treatment and is submerged in the process fluid (not shown). Opposite of each distribution body 21 is the substrate 30 that is attached to the substrate holder 20. The surface of the substrate 30 is wetted by the process fluid.
The distribution body 21 comprises a plurality of distribution openings (not shown) directed of the substrate 30. The plurality of distribution openings comprise outlet openings to direct a flow of process fluid to the substrate 30 and/or backflow openings to receive a backflow of process fluid from the substrate 30. The substrate 30 acts as a counter electrode to the anode or, in other words, as a cathode. The distribution body 21 may advantageously comprise plastic, in particularly advantageous manner polypropylene, polyvinyl chloride, polyethylene, acrylic glass, i.e. polymethyl methacrylate, polytetrafluoroethylene, or another material that will not be decomposed by the process fluid.
The anodes 22 are each located on a side of one of the distribution bodies 21 opposite of the substrate 30 and are also bathed in the process fluid. Each anode 22 is attached in a rear region of the respective distribution body 21, in mechanical contact with, or spatially separated from, the distribution body 21 such that the electric current flow is carried out between the anode 22 and the substrate 30 acting as counter electrode within the process fluid. Depending on the surface treatment method used, the anode 22 may consist of a material that is insoluble in the process liquid, such as platinized titanium, or otherwise a soluble material, such as for example, the metal to be galvanically separated.
A ventilation opening 26 and a process fluid opening 23 per anode enclosure system 10 are also arranged in and are part of the enclosure body 27. The process fluid opening 23 is an outlet for the process fluid.
The ventilation opening 26 is an outlet for gas generated during the surface treatment. The ventilation opening 26 allows a permanent and continuous ventilation of the anode enclosure system 10 and the anode 22 and thereby a permanent discharge of air from the anode enclosure system 10 and the anode 22. The ventilation opening 26 essentially prevents any flow of gas from the anode 22 to the substrate 30 and thereby a gas bubble formation.
The ventilation opening 26 is a spatially limited ventilation opening, which means a restricted passage in one of the walls of the anode enclosure system 10 and not an entirely open surface or wall of the cuboid anode enclosure system 10. The ventilation opening 26 is here arranged at the highest point of the enclosure body 27.
As a result, the anode enclosure system 10 according to the invention prevents an introduction of air into components for chemical and/or electrolytic surface treatment, as e.g. the distribution body 21, the anode 22 and/or the anode enclosure 27. Without this introduction of air, a more uniform surface treatment of the substrate 30 can be achieved. Consequently, the anode enclosure system 10 for chemical and/or electrolytic surface treatment according to the invention allows a more uniform material deposition on the substrate 30.
Figure 4 shows a schematic overview of steps of a distribution method for chemical and/or electrolytic surface treatment of a substrate 30 in a process fluid. The method for chemical and/or electrolytic surface treatment comprises the following steps: In a first step SI, providing an anode enclosure system 10 with an enclosure body 27, a distribution body 21, a ventilation opening 26 and a process fluid opening 23, wherein the enclosure body 27 is configured to enclose an anode 22, the distribution body 21 is configured to direct a flow of process fluid and/or electrical current to the substrate 30 and forms an element of the enclosure body 27, the ventilation opening 26 and the process fluid opening 23 are arranged in the enclosure body 27, the ventilation opening 26 is configured as an outlet for gas generated during the surface treatment, and the process fluid opening 23 is configured as an outlet for the process fluid. In a second step S2, removing gas generated during the surface treatment at least partially by means of the ventilation opening 26.
The systems, devices and methods are suitable, in particular, for the processing of structured semi-conductor substrates, conductor plates, and film substrates, but also for processing of the entire surface of planar metal and metallized substrates. Device and methods may also be used according to the invention for the production of large surface photoelectric panels for solar energy generation, or large-scale monitor panels.
It has to be noted that embodiments of the invention are described with reference to different subject matters. In particular, some embodiments are described with reference to method type claims whereas other embodiments are described with reference to the device type claims. However, a person skilled in the art will gather from the above and the following description that, unless otherwise notified, in addition to any combination of features belonging to one type of subject matter also any combination between features relating to different subject matters is considered to be disclosed with this application. However, all features can be combined providing synergetic effects that are more than the simple summation of the features.
While the invention has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary and not restrictive. The invention is not limited to the disclosed embodiments. Other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing a claimed invention, from a study of the drawings, the disclosure, and the dependent claims.
In the claims, the word “comprising” does not exclude other elements or steps, and the indefinite article “a” or “an” does not exclude a plurality. A single processor or other unit may fulfil the functions of several items re-cited in the claims. The mere fact that certain measures are re-cited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Any reference signs in the claims should not be construed as limiting the scope.

Claims (17)

CLAIMS:
1. An anode enclosure system (10) for chemical and/or electrolytic surface treatment of a substrate (30) in a process fluid, comprising:
an enclosure body (27), a distribution body (21), a ventilation opening (26), and a process fluid opening (23), wherein the enclosure body (27) is configured to enclose an anode (22), wherein the distribution body (21) forms an element of the enclosure body (27) and is configured to direct a flow of process fluid and/or electrical current to the substrate (30), wherein the ventilation opening (26) and the process fluid opening (23) are arranged in the enclosure body (27), wherein the ventilation opening (26) is configured as an outlet for gas generated during the surface treatment, and wherein the process fluid opening (23) is configured as an outlet for the process fluid.
2. System (10) according claim 1, wherein the distribution body (21) comprises a plurality of distribution openings directed to the substrate (30) acting as cathode.
3. System (10) according to one of the preceding claims, wherein the element of the enclosure body (27) formed by the distribution body (21) is a wall portion of the enclosure body (27).
4. System (10) according to one of the preceding claims, comprising only one spatially limited ventilation opening (26).
5. System (10) according to one of the preceding claims, wherein the ventilation opening (26) is smaller than a base area of the enclosure body (27), and in particular smaller than about 20 % of the base area.
6. System (10) according to one of the preceding claims, wherein the ventilation opening (26) is arranged at essentially the highest point of the enclosure body (27) when the anode (22) is operating.
7. System (10) according to one of the preceding claims, wherein the ventilation opening (26) is configured to essentially prevent any flow of gas from the anode (22) to the substrate (30).
8. System (10) according to one of the preceding claims, wherein the process fluid opening (23) is arranged at a rear side of the enclosure body (27) opposite to the wall portion of the enclosure body (27) forming the distribution body (21).
9. System (10) according to one of the claims 1 to 7, wherein the process fluid opening (23) is arranged at a lateral side of the enclosure body (27).
10. System (10) according to one of the preceding claims, wherein the process fluid opening (23) is connected to a pumping means configured to pump the process fluid.
11. System (10) according to one of the preceding claims, wherein the process fluid opening (23) is configured for a uniform flow of process fluid at the distribution body (21).
12. System (10) according to one of the preceding claims, comprising several process fluid openings (23).
13. System (10) according to one of the preceding claims, wherein the anode (22) is a multi-zone anode.
14. System (10) according to one of the preceding claims, further comprising a negative pressure unit configured to generate a negative pressure within the enclosure body (27).
15. System (10) according to one of the preceding claims, further comprising an oscillator unit configured to generate a sound field directed to the ventilation opening (26).
16. A device (100) for chemical and/or electrolytic surface treatment of a substrate (30) in a process fluid, comprising:
an anode enclosure system (10) according to one of the proceeding claims, and an anode (22), wherein the anode enclosure system (10) houses the anode (22).
17. A distribution method for chemical and/or electrolytic surface treatment of a substrate (30) in a process fluid, comprising the following steps:
providing an anode enclosure system (10) with an enclosure body (27), a distribution body (21), a ventilation opening (26) and a process fluid opening, wherein the enclosure body (27) is configured to enclose an anode (22), the distribution body (21) is configured to direct a flow of process fluid and/or electrical current to the substrate (30) and forms an element of the enclosure body (27), the ventilation opening (26) and the process fluid opening are arranged in the enclosure body (27), the ventilation opening (26) is configured as an outlet for gas generated during the surface treatment, and the process fluid opening is configured as an outlet for the process fluid, and removing gas generated during the surface treatment at least partially by means of the ventilation opening (26).
GB1712070.0A 2017-07-27 2017-07-27 System for chemical and/or electrolytic surface treatment Withdrawn GB2570268A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3872236A1 (en) * 2020-02-28 2021-09-01 Semsysco GmbH Distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate
EP3929332A1 (en) * 2020-06-25 2021-12-29 Semsysco GmbH Shield body system for a process fluid for chemical and/or electrolytic surface treatment of a substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4081347A (en) * 1975-03-27 1978-03-28 Otto Alfred Becker Apparatus for electroplating metal surfaces, in particular cut edges formed by stacking sheet metal panels cut to size
US20080241517A1 (en) * 2007-03-29 2008-10-02 Lam Research Corporation Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components
US20120103526A1 (en) * 2010-10-28 2012-05-03 Applied Materials, Inc. High purity aluminum coating hard anodization
US20160097141A1 (en) * 2014-10-06 2016-04-07 Ebara Corporation Plating method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4081347A (en) * 1975-03-27 1978-03-28 Otto Alfred Becker Apparatus for electroplating metal surfaces, in particular cut edges formed by stacking sheet metal panels cut to size
US20080241517A1 (en) * 2007-03-29 2008-10-02 Lam Research Corporation Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components
US20120103526A1 (en) * 2010-10-28 2012-05-03 Applied Materials, Inc. High purity aluminum coating hard anodization
US20160097141A1 (en) * 2014-10-06 2016-04-07 Ebara Corporation Plating method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KR20070001722 A (LG PHILIPS LCD CO LTD) Figures, Abstract AN: KR 20050057347 A *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3872236A1 (en) * 2020-02-28 2021-09-01 Semsysco GmbH Distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate
WO2021170851A1 (en) * 2020-02-28 2021-09-02 Semsysco Gmbh Distribution system for a process fluid and electric current for chemical and/or electrolytic surface treatment of a substrate
JP2023505619A (en) * 2020-02-28 2023-02-09 セムシスコ ゲーエムベーハー Distribution system for process fluids for chemical and/or electrolytic surface treatment of substrates
EP3929332A1 (en) * 2020-06-25 2021-12-29 Semsysco GmbH Shield body system for a process fluid for chemical and/or electrolytic surface treatment of a substrate
WO2021259528A1 (en) * 2020-06-25 2021-12-30 Semsysco Gmbh Shield body system for a process fluid for chemical and/or electrolytic surface treatment of a substrate

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