JP4995721B2 - プログラム時間制御を有する不揮発性メモリシステム - Google Patents

プログラム時間制御を有する不揮発性メモリシステム Download PDF

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Publication number
JP4995721B2
JP4995721B2 JP2007522558A JP2007522558A JP4995721B2 JP 4995721 B2 JP4995721 B2 JP 4995721B2 JP 2007522558 A JP2007522558 A JP 2007522558A JP 2007522558 A JP2007522558 A JP 2007522558A JP 4995721 B2 JP4995721 B2 JP 4995721B2
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Japan
Prior art keywords
voltage
program time
programming
pulse
voltage pump
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Expired - Fee Related
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JP2007522558A
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Japanese (ja)
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JP2008507802A5 (https=
JP2008507802A (ja
Inventor
ムーガット，ファルーク
リ，ヤン
ケイ． マック，アレキサンダー
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SanDisk Corp
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SanDisk Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Electric Clocks (AREA)
  • Debugging And Monitoring (AREA)
JP2007522558A 2004-07-20 2005-07-08 プログラム時間制御を有する不揮発性メモリシステム Expired - Fee Related JP4995721B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/896,096 2004-07-20
US10/896,096 US7110298B2 (en) 2004-07-20 2004-07-20 Non-volatile system with program time control
PCT/US2005/024701 WO2006019740A1 (en) 2004-07-20 2005-07-08 Non-volatile memory system with program time control

Publications (3)

Publication Number Publication Date
JP2008507802A JP2008507802A (ja) 2008-03-13
JP2008507802A5 JP2008507802A5 (https=) 2008-08-14
JP4995721B2 true JP4995721B2 (ja) 2012-08-08

Family

ID=35149504

Family Applications (1)

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JP2007522558A Expired - Fee Related JP4995721B2 (ja) 2004-07-20 2005-07-08 プログラム時間制御を有する不揮発性メモリシステム

Country Status (9)

Country Link
US (2) US7110298B2 (https=)
EP (1) EP1769508B1 (https=)
JP (1) JP4995721B2 (https=)
KR (1) KR101039238B1 (https=)
CN (1) CN101031978B (https=)
AT (1) ATE382183T1 (https=)
DE (1) DE602005004027T2 (https=)
TW (1) TWI391933B (https=)
WO (1) WO2006019740A1 (https=)

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US7339832B2 (en) * 2005-11-21 2008-03-04 Atmel Corporation Array source line (AVSS) controlled high voltage regulation for programming flash or EE array
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US7728574B2 (en) * 2006-02-17 2010-06-01 Micron Technology, Inc. Reference circuit with start-up control, generator, device, system and method including same
US7330373B2 (en) * 2006-03-28 2008-02-12 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in memory system
US7327608B2 (en) * 2006-03-28 2008-02-05 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in programming method
KR101312503B1 (ko) * 2006-03-28 2013-10-16 샌디스크 테크놀로지스, 인코포레이티드 개선된 프로그래밍 속도를 위해 프로그램 전압의 함수로서 프로그램 시간 조절
US7292495B1 (en) * 2006-06-29 2007-11-06 Freescale Semiconductor, Inc. Integrated circuit having a memory with low voltage read/write operation
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7793172B2 (en) * 2006-09-28 2010-09-07 Freescale Semiconductor, Inc. Controlled reliability in an integrated circuit
US7688656B2 (en) * 2007-10-22 2010-03-30 Freescale Semiconductor, Inc. Integrated circuit memory having dynamically adjustable read margin and method therefor
KR100932368B1 (ko) * 2007-11-21 2009-12-16 주식회사 하이닉스반도체 플래시 메모리 소자의 동작 방법
TWI358827B (en) 2007-11-26 2012-02-21 Nanya Technology Corp Data programming circuits and memory programming m
CN101458959B (zh) * 2007-12-12 2011-09-21 南亚科技股份有限公司 数据编程电路
JP2011210338A (ja) * 2010-03-30 2011-10-20 Toshiba Corp 不揮発性半導体記憶装置
US9741436B2 (en) 2010-07-09 2017-08-22 Seagate Technology Llc Dynamically controlling an operation execution time for a storage device
US8509001B2 (en) * 2011-06-27 2013-08-13 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory
US8432752B2 (en) 2011-06-27 2013-04-30 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory using verify read
CN102255499B (zh) * 2011-06-28 2015-12-09 上海华虹宏力半导体制造有限公司 电压稳压器
KR101893864B1 (ko) * 2012-02-06 2018-08-31 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 프로그램 방법과 이를 이용하는 데이터 처리 시스템
US9299443B1 (en) 2014-09-29 2016-03-29 Sandisk Technologies Inc. Modifying program pulses based on inter-pulse period to reduce program noise
US11574691B2 (en) 2016-02-24 2023-02-07 Samsung Electronics Co., Ltd. Memory device and memory system
KR102458918B1 (ko) * 2016-02-24 2022-10-25 삼성전자주식회사 메모리 장치 및 메모리 시스템
US10628049B2 (en) 2017-07-12 2020-04-21 Sandisk Technologies Llc Systems and methods for on-die control of memory command, timing, and/or control signals
US11211131B2 (en) 2018-12-10 2021-12-28 Micron Technology, Inc. Adjusting program effective time using program step characteristics
CN110189783B (zh) * 2019-04-15 2021-04-06 华中科技大学 非易失性三维半导体存储器件的多值编程方法及系统
CN110176269B (zh) * 2019-04-16 2020-11-17 华中科技大学 一种精确调控非易失性存储单元状态的方法及系统
CN111798905B (zh) * 2020-07-01 2021-03-16 深圳市芯天下技术有限公司 减少非型闪存编程时间的方法、系统、存储介质和终端
US11494084B2 (en) * 2020-12-11 2022-11-08 Micron Technology, Inc. Managing dielectric stress of a memory device using controlled ramping slopes
US12198765B2 (en) * 2022-05-23 2025-01-14 Sandisk Technologies Llc Pump skip for fast single-level cell non-volatile memory

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DE69533429T2 (de) 1995-06-07 2005-08-18 Macronix International Co. Ltd., Hsinchu Automatischer progammier-algorithmus für flash-speicher im seitenmodus mit variabler programmierimpulshöhe und -breite
US5596532A (en) * 1995-10-18 1997-01-21 Sandisk Corporation Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range
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JPH11328981A (ja) * 1998-05-12 1999-11-30 Matsushita Electric Ind Co Ltd 半導体記憶装置，およびレギュレータ
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JP4133166B2 (ja) * 2002-09-25 2008-08-13 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
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US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control

Also Published As

Publication number Publication date
CN101031978B (zh) 2011-06-08
JP2008507802A (ja) 2008-03-13
KR20070050426A (ko) 2007-05-15
US7110298B2 (en) 2006-09-19
WO2006019740A1 (en) 2006-02-23
TWI391933B (zh) 2013-04-01
EP1769508A1 (en) 2007-04-04
ATE382183T1 (de) 2008-01-15
US20060268618A1 (en) 2006-11-30
EP1769508B1 (en) 2007-12-26
DE602005004027D1 (de) 2008-02-07
US20060018160A1 (en) 2006-01-26
KR101039238B1 (ko) 2011-06-07
CN101031978A (zh) 2007-09-05
TW200625314A (en) 2006-07-16
US7262998B2 (en) 2007-08-28
DE602005004027T2 (de) 2008-12-11

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