DE602005004027D1 - Nichtflüchtiges speichersystem mit programmzeitsteuerung - Google Patents

Nichtflüchtiges speichersystem mit programmzeitsteuerung

Info

Publication number
DE602005004027D1
DE602005004027D1 DE602005004027T DE602005004027T DE602005004027D1 DE 602005004027 D1 DE602005004027 D1 DE 602005004027D1 DE 602005004027 T DE602005004027 T DE 602005004027T DE 602005004027 T DE602005004027 T DE 602005004027T DE 602005004027 D1 DE602005004027 D1 DE 602005004027D1
Authority
DE
Germany
Prior art keywords
programming
time period
program time
voltage
storage system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005004027T
Other languages
English (en)
Other versions
DE602005004027T2 (de
Inventor
Farookh Moogat
Yan Li
Alexander K Mak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE602005004027D1 publication Critical patent/DE602005004027D1/de
Application granted granted Critical
Publication of DE602005004027T2 publication Critical patent/DE602005004027T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Electric Clocks (AREA)
  • Debugging And Monitoring (AREA)
DE602005004027T 2004-07-20 2005-07-08 Nichtflüchtiges speichersystem mit programmzeitsteuerung Active DE602005004027T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US896096 2004-07-20
US10/896,096 US7110298B2 (en) 2004-07-20 2004-07-20 Non-volatile system with program time control
PCT/US2005/024701 WO2006019740A1 (en) 2004-07-20 2005-07-08 Non-volatile memory system with program time control

Publications (2)

Publication Number Publication Date
DE602005004027D1 true DE602005004027D1 (de) 2008-02-07
DE602005004027T2 DE602005004027T2 (de) 2008-12-11

Family

ID=35149504

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005004027T Active DE602005004027T2 (de) 2004-07-20 2005-07-08 Nichtflüchtiges speichersystem mit programmzeitsteuerung

Country Status (9)

Country Link
US (2) US7110298B2 (de)
EP (1) EP1769508B1 (de)
JP (1) JP4995721B2 (de)
KR (1) KR101039238B1 (de)
CN (1) CN101031978B (de)
AT (1) ATE382183T1 (de)
DE (1) DE602005004027T2 (de)
TW (1) TWI391933B (de)
WO (1) WO2006019740A1 (de)

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US7838596B2 (en) * 2005-09-16 2010-11-23 Eastman Chemical Company Late addition to effect compositional modifications in condensation polymers
US7339832B2 (en) * 2005-11-21 2008-03-04 Atmel Corporation Array source line (AVSS) controlled high voltage regulation for programming flash or EE array
TWI303763B (en) * 2006-01-25 2008-12-01 Via Tech Inc Device and method for controlling refresh rate of memory
US7728574B2 (en) * 2006-02-17 2010-06-01 Micron Technology, Inc. Reference circuit with start-up control, generator, device, system and method including same
US7327608B2 (en) * 2006-03-28 2008-02-05 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in programming method
ATE515035T1 (de) * 2006-03-28 2011-07-15 Sandisk Corp Programmzeiteinstellung als programmspannungsfunktion für erhöhte programmiergeschwindigkeit
US7330373B2 (en) * 2006-03-28 2008-02-12 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in memory system
US7292495B1 (en) * 2006-06-29 2007-11-06 Freescale Semiconductor, Inc. Integrated circuit having a memory with low voltage read/write operation
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7793172B2 (en) * 2006-09-28 2010-09-07 Freescale Semiconductor, Inc. Controlled reliability in an integrated circuit
US7688656B2 (en) * 2007-10-22 2010-03-30 Freescale Semiconductor, Inc. Integrated circuit memory having dynamically adjustable read margin and method therefor
KR100932368B1 (ko) * 2007-11-21 2009-12-16 주식회사 하이닉스반도체 플래시 메모리 소자의 동작 방법
TWI358827B (en) 2007-11-26 2012-02-21 Nanya Technology Corp Data programming circuits and memory programming m
CN101458959B (zh) * 2007-12-12 2011-09-21 南亚科技股份有限公司 数据编程电路
JP2011210338A (ja) * 2010-03-30 2011-10-20 Toshiba Corp 不揮発性半導体記憶装置
US9741436B2 (en) 2010-07-09 2017-08-22 Seagate Technology Llc Dynamically controlling an operation execution time for a storage device
US8432752B2 (en) 2011-06-27 2013-04-30 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory using verify read
US8509001B2 (en) * 2011-06-27 2013-08-13 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory
CN102255499B (zh) * 2011-06-28 2015-12-09 上海华虹宏力半导体制造有限公司 电压稳压器
KR101893864B1 (ko) * 2012-02-06 2018-08-31 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 프로그램 방법과 이를 이용하는 데이터 처리 시스템
US9299443B1 (en) 2014-09-29 2016-03-29 Sandisk Technologies Inc. Modifying program pulses based on inter-pulse period to reduce program noise
KR102458918B1 (ko) * 2016-02-24 2022-10-25 삼성전자주식회사 메모리 장치 및 메모리 시스템
US11574691B2 (en) 2016-02-24 2023-02-07 Samsung Electronics Co., Ltd. Memory device and memory system
US10628049B2 (en) 2017-07-12 2020-04-21 Sandisk Technologies Llc Systems and methods for on-die control of memory command, timing, and/or control signals
US11211131B2 (en) * 2018-12-10 2021-12-28 Micron Technology, Inc. Adjusting program effective time using program step characteristics
CN110189783B (zh) * 2019-04-15 2021-04-06 华中科技大学 非易失性三维半导体存储器件的多值编程方法及系统
CN110176269B (zh) * 2019-04-16 2020-11-17 华中科技大学 一种精确调控非易失性存储单元状态的方法及系统
CN111798905B (zh) * 2020-07-01 2021-03-16 深圳市芯天下技术有限公司 减少非型闪存编程时间的方法、系统、存储介质和终端
US20230377657A1 (en) * 2022-05-23 2023-11-23 Sandisk Technologies Llc Pump skip for fast single-level cell non-volatile memory

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US5596532A (en) * 1995-10-18 1997-01-21 Sandisk Corporation Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range
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US5991201A (en) * 1998-04-27 1999-11-23 Motorola Inc. Non-volatile memory with over-program protection and method therefor
JPH11328981A (ja) * 1998-05-12 1999-11-30 Matsushita Electric Ind Co Ltd 半導体記憶装置，およびレギュレータ
US6208542B1 (en) * 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
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US6040996A (en) * 1998-11-16 2000-03-21 Chartered Semiconductor Manufacturing, Ltd. Constant current programming waveforms for non-volatile memories
JP2000173194A (ja) * 1998-12-10 2000-06-23 Fujitsu Ltd Ｐｌｌ回路、ｐｌｌ回路の制御装置、及びディスク装置
US6320797B1 (en) * 1999-02-24 2001-11-20 Micron Technology, Inc. Method and circuit for regulating the output voltage from a charge pump circuit, and memory device using same
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US6927441B2 (en) * 2001-03-20 2005-08-09 Stmicroelectronics S.R.L. Variable stage charge pump
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6560152B1 (en) * 2001-11-02 2003-05-06 Sandisk Corporation Non-volatile memory with temperature-compensated data read
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JP3726753B2 (ja) * 2002-01-23 2005-12-14 セイコーエプソン株式会社 不揮発性半導体記憶装置の昇圧回路
JP3700173B2 (ja) * 2002-05-28 2005-09-28 ソニー株式会社 電圧変換制御回路及び方法
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US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
US6937520B2 (en) * 2004-01-21 2005-08-30 Tsuyoshi Ono Nonvolatile semiconductor memory device
US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control

Also Published As

Publication number Publication date
EP1769508A1 (de) 2007-04-04
EP1769508B1 (de) 2007-12-26
KR20070050426A (ko) 2007-05-15
CN101031978B (zh) 2011-06-08
TWI391933B (zh) 2013-04-01
US20060018160A1 (en) 2006-01-26
ATE382183T1 (de) 2008-01-15
CN101031978A (zh) 2007-09-05
WO2006019740A1 (en) 2006-02-23
US7262998B2 (en) 2007-08-28
US20060268618A1 (en) 2006-11-30
JP2008507802A (ja) 2008-03-13
US7110298B2 (en) 2006-09-19
TW200625314A (en) 2006-07-16
DE602005004027T2 (de) 2008-12-11
KR101039238B1 (ko) 2011-06-07
JP4995721B2 (ja) 2012-08-08

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