JP4975099B2 - 銅の無電解堆積のためのメッキ溶液 - Google Patents
銅の無電解堆積のためのメッキ溶液 Download PDFInfo
- Publication number
- JP4975099B2 JP4975099B2 JP2009510177A JP2009510177A JP4975099B2 JP 4975099 B2 JP4975099 B2 JP 4975099B2 JP 2009510177 A JP2009510177 A JP 2009510177A JP 2009510177 A JP2009510177 A JP 2009510177A JP 4975099 B2 JP4975099 B2 JP 4975099B2
- Authority
- JP
- Japan
- Prior art keywords
- plating solution
- copper
- cobalt
- copper plating
- aqueous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010949 copper Substances 0.000 title claims description 149
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 136
- 229910052802 copper Inorganic materials 0.000 title claims description 133
- 238000007747 plating Methods 0.000 title claims description 104
- 230000008021 deposition Effects 0.000 title description 26
- 239000000243 solution Substances 0.000 claims description 147
- 239000000203 mixture Substances 0.000 claims description 42
- 239000008139 complexing agent Substances 0.000 claims description 29
- 230000002378 acidificating effect Effects 0.000 claims description 21
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 19
- -1 copper tetrafluoroborate Chemical compound 0.000 claims description 18
- 150000001879 copper Chemical class 0.000 claims description 17
- 150000001868 cobalt Chemical class 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 12
- 238000005137 deposition process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 229940011182 cobalt acetate Drugs 0.000 claims description 5
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 claims description 5
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 claims description 5
- 229910001981 cobalt nitrate Inorganic materials 0.000 claims description 5
- 229910000361 cobalt sulfate Inorganic materials 0.000 claims description 5
- 229940044175 cobalt sulfate Drugs 0.000 claims description 5
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 claims description 5
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 claims description 5
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 5
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 5
- GKQPCPXONLDCMU-CCEZHUSRSA-N lacidipine Chemical compound CCOC(=O)C1=C(C)NC(C)=C(C(=O)OCC)C1C1=CC=CC=C1\C=C\C(=O)OC(C)(C)C GKQPCPXONLDCMU-CCEZHUSRSA-N 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 4
- 239000003002 pH adjusting agent Substances 0.000 claims 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims 2
- 239000005977 Ethylene Substances 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 2
- 239000007853 buffer solution Substances 0.000 claims 1
- 150000003839 salts Chemical class 0.000 description 44
- QYBZRRUECLSRCO-UHFFFAOYSA-N copper;ethane-1,2-diamine Chemical compound [Cu].NCCN.NCCN QYBZRRUECLSRCO-UHFFFAOYSA-N 0.000 description 41
- 238000000151 deposition Methods 0.000 description 25
- 229910017052 cobalt Inorganic materials 0.000 description 19
- 239000010941 cobalt Substances 0.000 description 19
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 17
- 238000009472 formulation Methods 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229920000768 polyamine Polymers 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 239000003638 chemical reducing agent Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 125000000129 anionic group Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 238000000454 electroless metal deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- MKRZOSLIMIMVJX-UHFFFAOYSA-N [N+](=O)([O-])[O-].[Co+2].NCCNCCN.NCCNCCN.[N+](=O)([O-])[O-] Chemical compound [N+](=O)([O-])[O-].[Co+2].NCCNCCN.NCCNCCN.[N+](=O)([O-])[O-] MKRZOSLIMIMVJX-UHFFFAOYSA-N 0.000 description 1
- 150000008043 acidic salts Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- UWVVFJRBSCGSCQ-UHFFFAOYSA-L cobalt(2+) ethane-1,2-diamine sulfate Chemical compound S(=O)(=O)([O-])[O-].[Co+2].C(CN)N.C(CN)N UWVVFJRBSCGSCQ-UHFFFAOYSA-L 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- BLQSYEDFGRJUQG-UHFFFAOYSA-N copper N'-(2-aminoethyl)ethane-1,2-diamine dinitrate Chemical compound [N+](=O)([O-])[O-].[Cu+2].NCCNCCN.[N+](=O)([O-])[O-] BLQSYEDFGRJUQG-UHFFFAOYSA-N 0.000 description 1
- PBZWNRDWUDVFOL-UHFFFAOYSA-N copper N'-(2-aminoethyl)ethane-1,2-diamine dinitrate Chemical compound [N+](=O)([O-])[O-].[Cu+2].NCCNCCN.NCCNCCN.[N+](=O)([O-])[O-] PBZWNRDWUDVFOL-UHFFFAOYSA-N 0.000 description 1
- AQEDFGUKQJUMBV-UHFFFAOYSA-N copper;ethane-1,2-diamine Chemical compound [Cu].NCCN AQEDFGUKQJUMBV-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- MGNVWUDMMXZUDI-UHFFFAOYSA-N propane-1,3-disulfonic acid Chemical compound OS(=O)(=O)CCCS(O)(=O)=O MGNVWUDMMXZUDI-UHFFFAOYSA-N 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1687—Process conditions with ionic liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/382,906 US7306662B2 (en) | 2006-05-11 | 2006-05-11 | Plating solution for electroless deposition of copper |
| US11/382,906 | 2006-05-11 | ||
| PCT/US2007/068691 WO2007134182A1 (en) | 2006-05-11 | 2007-05-10 | Plating solution for electroless deposition of copper |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009536987A JP2009536987A (ja) | 2009-10-22 |
| JP2009536987A5 JP2009536987A5 (enExample) | 2011-07-07 |
| JP4975099B2 true JP4975099B2 (ja) | 2012-07-11 |
Family
ID=38683921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009510177A Expired - Fee Related JP4975099B2 (ja) | 2006-05-11 | 2007-05-10 | 銅の無電解堆積のためのメッキ溶液 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7306662B2 (enExample) |
| EP (1) | EP2016207B1 (enExample) |
| JP (1) | JP4975099B2 (enExample) |
| KR (1) | KR101392120B1 (enExample) |
| CN (1) | CN101490308B (enExample) |
| MY (1) | MY144454A (enExample) |
| TW (1) | TWI390079B (enExample) |
| WO (1) | WO2007134182A1 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7686875B2 (en) * | 2006-05-11 | 2010-03-30 | Lam Research Corporation | Electroless deposition from non-aqueous solutions |
| US8298325B2 (en) * | 2006-05-11 | 2012-10-30 | Lam Research Corporation | Electroless deposition from non-aqueous solutions |
| US7752996B2 (en) * | 2006-05-11 | 2010-07-13 | Lam Research Corporation | Apparatus for applying a plating solution for electroless deposition |
| JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
| US7749893B2 (en) * | 2006-12-18 | 2010-07-06 | Lam Research Corporation | Methods and systems for low interfacial oxide contact between barrier and copper metallization |
| US20080152823A1 (en) * | 2006-12-20 | 2008-06-26 | Lam Research Corporation | Self-limiting plating method |
| US7794530B2 (en) * | 2006-12-22 | 2010-09-14 | Lam Research Corporation | Electroless deposition of cobalt alloys |
| US7521358B2 (en) * | 2006-12-26 | 2009-04-21 | Lam Research Corporation | Process integration scheme to lower overall dielectric constant in BEoL interconnect structures |
| US8058164B2 (en) * | 2007-06-04 | 2011-11-15 | Lam Research Corporation | Methods of fabricating electronic devices using direct copper plating |
| US8323460B2 (en) * | 2007-06-20 | 2012-12-04 | Lam Research Corporation | Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal |
| US8673769B2 (en) | 2007-06-20 | 2014-03-18 | Lam Research Corporation | Methods and apparatuses for three dimensional integrated circuits |
| JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
| US20090162681A1 (en) * | 2007-12-21 | 2009-06-25 | Artur Kolics | Activation solution for electroless plating on dielectric layers |
| WO2014076431A2 (fr) | 2012-11-15 | 2014-05-22 | Alchimer | Dispositif semi-conducteur et son procede de fabrication |
| US9095518B2 (en) | 2013-08-01 | 2015-08-04 | Liqwd, Inc. | Methods for fixing hair and skin |
| US12233289B2 (en) | 2013-08-01 | 2025-02-25 | Olaplex, Inc. | Methods for fixing hair and skin |
| PT3142637T (pt) | 2014-05-16 | 2020-10-15 | Olaplex Inc | Formulações e métodos de tratamento de queratina |
| US9287183B1 (en) * | 2015-03-31 | 2016-03-15 | Lam Research Corporation | Using electroless deposition as a metrology tool to highlight contamination, residue, and incomplete via etch |
| KR102661331B1 (ko) | 2015-04-24 | 2024-04-30 | 올라플렉스, 인코포레이티드 | 릴렉싱된 헤어의 처리 방법 |
| EP3288520A4 (en) | 2015-05-01 | 2018-12-12 | L'oreal | Use of active agents during chemical treatments |
| CN105470169A (zh) * | 2015-11-20 | 2016-04-06 | 中国科学院微电子研究所 | 面向GaN器件的介质生长系统及其操作方法 |
| WO2017091797A1 (en) | 2015-11-24 | 2017-06-01 | L'oreal | Compositions for treating the hair |
| CN108495613B (zh) | 2015-11-24 | 2021-12-10 | 欧莱雅 | 用于处理头发的组合物 |
| JP6873994B2 (ja) | 2015-11-24 | 2021-05-19 | ロレアル | 毛髪を処置するための組成物 |
| CN106048569A (zh) * | 2016-06-12 | 2016-10-26 | 含山县朝霞铸造有限公司 | 一种铝合金压铸件表面处理方法及其产品 |
| US9872821B1 (en) | 2016-07-12 | 2018-01-23 | Liqwd, Inc. | Methods and formulations for curling hair |
| US9713583B1 (en) | 2016-07-12 | 2017-07-25 | Liqwd, Inc. | Methods and formulations for curling hair |
| KR101734840B1 (ko) * | 2016-11-11 | 2017-05-15 | 일진머티리얼즈 주식회사 | 내굴곡성이 우수한 이차전지용 전해동박 및 그의 제조방법 |
| US11135150B2 (en) | 2016-11-21 | 2021-10-05 | L'oreal | Compositions and methods for improving the quality of chemically treated hair |
| US9974725B1 (en) | 2017-05-24 | 2018-05-22 | L'oreal | Methods for treating chemically relaxed hair |
| WO2019133785A1 (en) | 2017-12-29 | 2019-07-04 | L'oreal | Compositions for altering the color of hair |
| US11090249B2 (en) | 2018-10-31 | 2021-08-17 | L'oreal | Hair treatment compositions, methods, and kits for treating hair |
| JP7441523B2 (ja) * | 2019-02-01 | 2024-03-01 | 国立大学法人大阪大学 | ５’位修飾ヌクレオシドおよびそれを用いたヌクレオチド |
| US11419809B2 (en) | 2019-06-27 | 2022-08-23 | L'oreal | Hair treatment compositions and methods for treating hair |
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| US3935013A (en) * | 1973-11-12 | 1976-01-27 | Eastman Kodak Company | Electroless deposition of a copper-nickel alloy on an imagewise pattern of physically developable metal nuclei |
| JPS5220339A (en) * | 1975-08-08 | 1977-02-16 | Hitachi Ltd | Chemical copper plating solution |
| US4143186A (en) * | 1976-09-20 | 1979-03-06 | Amp Incorporated | Process for electroless copper deposition from an acidic bath |
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| US4303443A (en) * | 1979-06-15 | 1981-12-01 | Hitachi, Ltd. | Electroless copper plating solution |
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| JP2002093747A (ja) * | 2000-09-19 | 2002-03-29 | Sony Corp | 導体構造の形成方法及び導体構造、並びに半導体装置の製造方法及び半導体装置 |
| JP3707394B2 (ja) * | 2001-04-06 | 2005-10-19 | ソニー株式会社 | 無電解メッキ方法 |
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| CN1329972C (zh) * | 2001-08-13 | 2007-08-01 | 株式会社荏原制作所 | 半导体器件及其制造方法 |
| JP2003142427A (ja) * | 2001-11-06 | 2003-05-16 | Ebara Corp | めっき液、半導体装置及びその製造方法 |
| US6911068B2 (en) * | 2001-10-02 | 2005-06-28 | Shipley Company, L.L.C. | Plating bath and method for depositing a metal layer on a substrate |
| US20070048447A1 (en) * | 2005-08-31 | 2007-03-01 | Alan Lee | System and method for forming patterned copper lines through electroless copper plating |
| WO2005038088A1 (ja) * | 2003-10-20 | 2005-04-28 | Kansai Technology Licensing Organization Co., Ltd. | 無電解銅めっき液及びそれを用いた配線基板の製造方法 |
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| WO2007134182A1 (en) | 2007-11-22 |
| TW200811312A (en) | 2008-03-01 |
| EP2016207B1 (en) | 2018-01-10 |
| US20070261594A1 (en) | 2007-11-15 |
| MY144454A (en) | 2011-09-30 |
| KR20090017582A (ko) | 2009-02-18 |
| TWI390079B (zh) | 2013-03-21 |
| US7306662B2 (en) | 2007-12-11 |
| EP2016207A4 (en) | 2015-05-27 |
| CN101490308A (zh) | 2009-07-22 |
| KR101392120B1 (ko) | 2014-05-07 |
| CN101490308B (zh) | 2012-07-18 |
| JP2009536987A (ja) | 2009-10-22 |
| EP2016207A1 (en) | 2009-01-21 |
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