KR101392120B1 - 구리의 무전해 증착을 위한 도금액 - Google Patents
구리의 무전해 증착을 위한 도금액 Download PDFInfo
- Publication number
- KR101392120B1 KR101392120B1 KR1020087030088A KR20087030088A KR101392120B1 KR 101392120 B1 KR101392120 B1 KR 101392120B1 KR 1020087030088 A KR1020087030088 A KR 1020087030088A KR 20087030088 A KR20087030088 A KR 20087030088A KR 101392120 B1 KR101392120 B1 KR 101392120B1
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- cobalt
- plating solution
- aqueous
- salt component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010949 copper Substances 0.000 title claims abstract description 132
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 109
- 238000007747 plating Methods 0.000 title claims abstract description 103
- 230000008021 deposition Effects 0.000 title claims description 24
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000002378 acidificating effect Effects 0.000 claims abstract description 24
- 150000001879 copper Chemical class 0.000 claims abstract description 22
- 150000001868 cobalt Chemical class 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000008139 complexing agent Substances 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 40
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 19
- -1 tetrafluoroborate Chemical compound 0.000 claims description 17
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 10
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 claims description 5
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 claims description 5
- 229910001981 cobalt nitrate Inorganic materials 0.000 claims description 5
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 claims description 5
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 claims description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 5
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910021592 Copper(II) chloride Inorganic materials 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- BLQSYEDFGRJUQG-UHFFFAOYSA-N copper N'-(2-aminoethyl)ethane-1,2-diamine dinitrate Chemical compound [N+](=O)([O-])[O-].[Cu+2].NCCNCCN.[N+](=O)([O-])[O-] BLQSYEDFGRJUQG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000366 copper(II) sulfate Inorganic materials 0.000 claims description 2
- GPNKJBLELXHFFQ-UHFFFAOYSA-L copper;ethane-1,2-diamine;sulfate Chemical compound [Cu+2].NCCN.NCCN.[O-]S([O-])(=O)=O GPNKJBLELXHFFQ-UHFFFAOYSA-L 0.000 claims description 2
- LQTVMAGOCSAAGX-UHFFFAOYSA-L copper;ethane-1,2-diamine;sulfate Chemical compound [Cu+2].NCCN.[O-]S([O-])(=O)=O LQTVMAGOCSAAGX-UHFFFAOYSA-L 0.000 claims description 2
- GKQPCPXONLDCMU-CCEZHUSRSA-N lacidipine Chemical compound CCOC(=O)C1=C(C)NC(C)=C(C(=O)OCC)C1C1=CC=CC=C1\C=C\C(=O)OC(C)(C)C GKQPCPXONLDCMU-CCEZHUSRSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 10
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 5
- 229910017604 nitric acid Inorganic materials 0.000 claims 5
- 229910000365 copper sulfate Inorganic materials 0.000 claims 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 18
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical class [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 17
- 150000003839 salts Chemical class 0.000 description 15
- 238000009472 formulation Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 238000005137 deposition process Methods 0.000 description 10
- 229920000768 polyamine Polymers 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- 229910000001 cobalt(II) carbonate Inorganic materials 0.000 description 9
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 239000003638 chemical reducing agent Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000536 complexating effect Effects 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 125000000129 anionic group Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000006479 redox reaction Methods 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- SDWVYGAODWSQNO-UHFFFAOYSA-N copper;cobalt(2+) Chemical compound [Co+2].[Cu+2] SDWVYGAODWSQNO-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000000454 electroless metal deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OJWUUBGCASMJOR-UHFFFAOYSA-N N'-(2-aminoethyl)ethane-1,2-diamine cobalt(2+) dinitrate Chemical compound [N+](=O)([O-])[O-].[Co+2].NCCNCCN.[N+](=O)([O-])[O-] OJWUUBGCASMJOR-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- UWVVFJRBSCGSCQ-UHFFFAOYSA-L cobalt(2+) ethane-1,2-diamine sulfate Chemical compound S(=O)(=O)([O-])[O-].[Co+2].C(CN)N.C(CN)N UWVVFJRBSCGSCQ-UHFFFAOYSA-L 0.000 description 1
- GJZRSEPNBCRCJW-UHFFFAOYSA-L cobalt(2+);ethane-1,2-diamine;sulfate Chemical compound [Co+2].NCCN.[O-]S([O-])(=O)=O GJZRSEPNBCRCJW-UHFFFAOYSA-L 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 229910001497 copper(II) tetrafluoroborate Inorganic materials 0.000 description 1
- 230000003635 deoxygenating effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- MGNVWUDMMXZUDI-UHFFFAOYSA-N propane-1,3-disulfonic acid Chemical compound OS(=O)(=O)CCCS(O)(=O)=O MGNVWUDMMXZUDI-UHFFFAOYSA-N 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1687—Process conditions with ionic liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/382,906 US7306662B2 (en) | 2006-05-11 | 2006-05-11 | Plating solution for electroless deposition of copper |
| US11/382,906 | 2006-05-11 | ||
| PCT/US2007/068691 WO2007134182A1 (en) | 2006-05-11 | 2007-05-10 | Plating solution for electroless deposition of copper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090017582A KR20090017582A (ko) | 2009-02-18 |
| KR101392120B1 true KR101392120B1 (ko) | 2014-05-07 |
Family
ID=38683921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087030088A Active KR101392120B1 (ko) | 2006-05-11 | 2008-12-10 | 구리의 무전해 증착을 위한 도금액 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7306662B2 (enExample) |
| EP (1) | EP2016207B1 (enExample) |
| JP (1) | JP4975099B2 (enExample) |
| KR (1) | KR101392120B1 (enExample) |
| CN (1) | CN101490308B (enExample) |
| MY (1) | MY144454A (enExample) |
| TW (1) | TWI390079B (enExample) |
| WO (1) | WO2007134182A1 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7686875B2 (en) * | 2006-05-11 | 2010-03-30 | Lam Research Corporation | Electroless deposition from non-aqueous solutions |
| US8298325B2 (en) * | 2006-05-11 | 2012-10-30 | Lam Research Corporation | Electroless deposition from non-aqueous solutions |
| US7752996B2 (en) * | 2006-05-11 | 2010-07-13 | Lam Research Corporation | Apparatus for applying a plating solution for electroless deposition |
| JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
| US7749893B2 (en) * | 2006-12-18 | 2010-07-06 | Lam Research Corporation | Methods and systems for low interfacial oxide contact between barrier and copper metallization |
| US20080152823A1 (en) * | 2006-12-20 | 2008-06-26 | Lam Research Corporation | Self-limiting plating method |
| US7794530B2 (en) * | 2006-12-22 | 2010-09-14 | Lam Research Corporation | Electroless deposition of cobalt alloys |
| US7521358B2 (en) * | 2006-12-26 | 2009-04-21 | Lam Research Corporation | Process integration scheme to lower overall dielectric constant in BEoL interconnect structures |
| US8058164B2 (en) * | 2007-06-04 | 2011-11-15 | Lam Research Corporation | Methods of fabricating electronic devices using direct copper plating |
| US8323460B2 (en) * | 2007-06-20 | 2012-12-04 | Lam Research Corporation | Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal |
| US8673769B2 (en) | 2007-06-20 | 2014-03-18 | Lam Research Corporation | Methods and apparatuses for three dimensional integrated circuits |
| JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
| US20090162681A1 (en) * | 2007-12-21 | 2009-06-25 | Artur Kolics | Activation solution for electroless plating on dielectric layers |
| WO2014076431A2 (fr) | 2012-11-15 | 2014-05-22 | Alchimer | Dispositif semi-conducteur et son procede de fabrication |
| US9095518B2 (en) | 2013-08-01 | 2015-08-04 | Liqwd, Inc. | Methods for fixing hair and skin |
| US12233289B2 (en) | 2013-08-01 | 2025-02-25 | Olaplex, Inc. | Methods for fixing hair and skin |
| PT3142637T (pt) | 2014-05-16 | 2020-10-15 | Olaplex Inc | Formulações e métodos de tratamento de queratina |
| US9287183B1 (en) * | 2015-03-31 | 2016-03-15 | Lam Research Corporation | Using electroless deposition as a metrology tool to highlight contamination, residue, and incomplete via etch |
| KR102661331B1 (ko) | 2015-04-24 | 2024-04-30 | 올라플렉스, 인코포레이티드 | 릴렉싱된 헤어의 처리 방법 |
| EP3288520A4 (en) | 2015-05-01 | 2018-12-12 | L'oreal | Use of active agents during chemical treatments |
| CN105470169A (zh) * | 2015-11-20 | 2016-04-06 | 中国科学院微电子研究所 | 面向GaN器件的介质生长系统及其操作方法 |
| WO2017091797A1 (en) | 2015-11-24 | 2017-06-01 | L'oreal | Compositions for treating the hair |
| CN108495613B (zh) | 2015-11-24 | 2021-12-10 | 欧莱雅 | 用于处理头发的组合物 |
| JP6873994B2 (ja) | 2015-11-24 | 2021-05-19 | ロレアル | 毛髪を処置するための組成物 |
| CN106048569A (zh) * | 2016-06-12 | 2016-10-26 | 含山县朝霞铸造有限公司 | 一种铝合金压铸件表面处理方法及其产品 |
| US9872821B1 (en) | 2016-07-12 | 2018-01-23 | Liqwd, Inc. | Methods and formulations for curling hair |
| US9713583B1 (en) | 2016-07-12 | 2017-07-25 | Liqwd, Inc. | Methods and formulations for curling hair |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2007134182A1 (en) | 2007-11-22 |
| TW200811312A (en) | 2008-03-01 |
| EP2016207B1 (en) | 2018-01-10 |
| US20070261594A1 (en) | 2007-11-15 |
| MY144454A (en) | 2011-09-30 |
| KR20090017582A (ko) | 2009-02-18 |
| TWI390079B (zh) | 2013-03-21 |
| US7306662B2 (en) | 2007-12-11 |
| EP2016207A4 (en) | 2015-05-27 |
| CN101490308A (zh) | 2009-07-22 |
| JP4975099B2 (ja) | 2012-07-11 |
| CN101490308B (zh) | 2012-07-18 |
| JP2009536987A (ja) | 2009-10-22 |
| EP2016207A1 (en) | 2009-01-21 |
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