Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
  • C23C18/31—Coating with metals
  • C23C18/38—Coating with copper
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
  • C23C18/1601—Process or apparatus
  • C23C18/1633—Process of electroless plating
  • C23C18/1635—Composition of the substrate
  • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
  • C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
  • C23C18/1601—Process or apparatus
  • C23C18/1633—Process of electroless plating
  • C23C18/1675—Process conditions
  • C23C18/1687—Process conditions with ionic liquid
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
  • C23C18/48—Coating with alloys
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
  • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
  • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Definitions

• wafers In the fabrication of semiconductor devices such as integrated circuits, memory cells, and the like, a series of manufacturing operations are performed to define features on semiconductor wafers ("wafers").
• the wafers include integrated circuit devices in the form of multi-level structures defined on a silicon substrate. At a substrate level, transistor devices with diffusion regions are formed. In subsequent levels, interconnect metallization lines are patterned and electrically connected to the transistor devices to define a desired integrated circuit device. Also, patterned conductive layers are insulated from other conductive layers by dielectric materials.
• transistors are first created on the surface of the wafer.
• the wiring and insulating structures are then added as multiple thin-film layers through a series of manufacturing process steps.
• a first layer of dielectric (insulating) material is deposited on top of the formed transistors.
• Subsequent layers of metal e.g., copper, aluminum, etc. are formed on top of this base layer, etched to create the conductive lines that carry the electricity, and then filled with dielectric material to create the necessary insulators between the lines.
• PVD Cu PVD seed layer
• ECP Cu electroplated layer
• electroless chemistries are under consideration for use as a PVD Cu replacement, and even as a ECP Cu replacement.
• a process called electroless copper deposition can thus be used to build the copper conduction lines.
• electroless copper deposition electrons are transferred from a reducing agent to the copper ions in the solution resulting in the deposition of reduced copper onto the wafer surface.
• the formulation of the electroless copper plating solution is optimized to maximize the electron transfer process involving the copper ions in solution.
• an electroless copper plating solution is disclosed.
• the solution includes an aqueous copper salt component, an aqueous cobalt salt component, a triamine based complexing agent, and a pH-modifying substance.
• the electroless copper plating solution includes an aqueous copper salt component with a concentration range between about 0.001 molarity (M) to the salt solubility limit.
• the electroless copper plating solution includes an aqueous cobalt salt component with a concentration range between about 0.001 molarity (M) to to the salt solubility limit.
• an electroless copper plating solution includes a complexing agent having a triamine group with a concentration range between about 0.005 molarity (M) to 10.0M.
• a method for preparing an electroless copper plating solution involves combining the aqueous copper salt component, a portion of the complexing agent component and the acid component of the plating solution into a first mixture.
• the aqueous cobalt salt component and the remainder of the complexing agent is combined into a second mixture. Prior to use in an electroless copper deposition operation, the first mixture and second mixture are combined.
• Electroless metal deposition processes used in semiconductor manufacturing applications are based upon simple electron transfer concepts. The processes involve placing a prepared semiconductor wafer into an electroless metal plating solution bath then inducing the metal ions in the solution to accept electrons from a reducing agent resulting in the deposition of the reduced metal onto the surface of the wafer.
• the success of the electroless metal deposition process is highly dependent upon the various physical (e.g., temperature, etc.) and chemical (e.g., pH, reagents, etc.) parameters of the plating solution.
• a reducing agent is an element or compound in an oxidation-reduction reaction that reduces another compound or element, hi doing so, the reducing agent becomes oxidized.
• a complexing agent i.e., chelators or chelating agent
• a salt is any ionic compound composed of positively charged cations (e.g., Cu 2+ , etc.) and negatively charged anions, so that the product is neutral and without a net charge.
• a simple salt is any salt species that contain only one kind of positive ion (other than the hydrogen ion in acid salts).
• a complex salt is any salt species that contains a complex ion that is made up of a metallic ion attached to one or more electron-donating molecules. Typically a complex ion consists of a metallic atom or ion to which is attached one or more electron-donating molecules (e.g.,
• a protonized compound is one that has accepted a hydrogen ion (i.e., H + ) to form a compound with a net positive charge.
• a copper plating solution for use in electroless copper deposition applications is disclosed below.
• the components of the solution are a copper(IT) salt, a cobalt(II) salt, and a polyamine-based complexing agent, hi one exemplary embodiment, the copper plating solution is prepared using de-oxygenated liquids.
• de-oxygenated liquids substantially eliminates oxidation of the wafer surfaces and nullifies any effect that the liquids may have on the redox potential of the final prepared copper plating solution.
• the copper(II) salt is a simple salt.
• Examples of simple copper(II) salts include copper(II) sulfate, copper (II) nitrate, copper(II) chloride, copper(II) tetrafluoroborate, copper(II) acetate, and mixtures thereof. It should be appreciated that essentially any simple salt of copper(II) can be used in the solution so long as the salt can be effectively solubilized into solution, be complexed by a polyamine-based complexing agent, and oxidized by a reducing agent in an acidic environment to result in deposition of the reduced copper onto the surface of the wafer.
• the copper(II) salt is a complex salt with a polyamine electron- donating molecule attached to the copper(II) ion.
• complex copper(II) salts include copper( ⁇ ) ethylenediamine sulfate, bis(ethylenediamine)cop ⁇ er(II) sulfate, copper (II) dietheylenetriamine nitrate, bis(dietheylenetriamine)copper(H) nitrate, and mixtures thereof.
• any complex salt of copper( ⁇ ) attached to a polyamine molecule can be used in the solution so long as the resulting salt can be solubilized into solution, be complexed to a polyamine-based complexing agent, and oxidized by a reducing agent in an acidic environment to result in deposition of the reduced copper onto the surface of the wafer.
• the concentration of the copper(II) salt component of the copper plating solution is maintained at a concentration of between about 0.0001 molarity (M) and the solubility limit of the various copper(II) salts disclosed above.
• the concentration of the copper(H) salt component of the copper plating solution is maintained at between about 0.01 M and 10.0 M. It should be understood that the concentration of the copper(II) salt component of the copper plating solution can essentially be adjusted to any value up to the solubility limit of the copper(IT) salt as long as the resulting copper plating solution can effectuate electroless deposition of copper on a wafer surface during an electroless copper deposition process.
• the cobalt(II) salt is a simple cobalt salt.
• simple cobalt(II) salts include cobalt(II) sulfate, cobalt(II) chloride, cobalt(II) nitrate, cobalt(H) tetrafluoroborate, cobalt(II) acetate, and mixtures thereof.
• any simple salt of cobalt(II) can be used in the solution so long as the salt can be effectively solubilized in the solution, be complexed to a polyamine-based complexing agent, and reduce a cobalt(II) salt in an acidic environment to result in the deposition of the reduced copper onto the surface of the wafer.
• the cobalt(H) salt is a complex salt with a polyamine electron- donating molecule attached to the cobalt(II) ion.
• complex cobalt(IT) salts include cobalt(II) ethylenediamine sulfate, bis(ethylenediamine)cobalt(II) sulfate, cobalt(II) dietheylenetriamine nitrate, bis(dietheylenetriamine)cobalt(II) nitrate, and mixtures thereof.
• any simple salt of cobalt(II) can be used in the solution so long as the salt can be effectively solubilized into solution, be complexed to a polyamine-based complexing agent, and reduce a copper(II) salt in an acidic environment to result in the deposition of the reduced copper onto the surface of the wafer.
• the concentration of the cobalt(II) salt component of the copper plating solution is maintained at between about 0.0001 molarity (M) and the solubility limit of the various cobalt(II) salt species disclosed above. In one exemplary embodiment, the concentration of the cobalt(II) salt component of the copper plating solution is maintained at between about 0.01 M and 1.0 M. It should be understood that the concentration of the cobalt(II) salt component of the copper plating solution can essentially be adjusted to any value up to the solubility limit of the cobalt(II) salt as long as the resulting copper plating solution can effectuate electroless deposition of copper on a wafer surface at an acceptable rate during an electroless copper deposition process.
• the polyamine-based complexing agent is a diamine compound.
• diamine compounds that can be utilized for the solution include ethylenediamine, propylenediamine, 3-methylenediamine, and mixtures thereof.
• the polyamine-based complexing agent is a triamine compound. Examples of triamine compounds that can be utilized for the solution include diethylenetriamine, dipropylenetriamine, ethylene propylenetriamine, and mixtures thereof.
• any diamine or triamine compound can be used as the complexing agent for the plating solution so long as the compound can complex with the free metal ions in the solution (i.e., copper(II) metal ions and cobalt(II) metal ions), be readily solubilized in the solution, and be protonized in an acidic environment.
• other chemical additives including levelers (amine-conating compounds such as the azo dyes (i.e. Janus Green), accelerators (i.e., SPS, sulfopropyl sulfonate) and suppressors (i.e., PEG, polyethylene glycol) are included in the copper plating solution at low concentrations to enhance the application specific performance of the solution.
• the concentration of the complexing agent component of the copper plating solution is maintained at between about 0,0001 molarity (M) and the solubility limit of the various diamine-based or triamine-based complexing agent species disclosed above.
• M molarity
• the concentration of the complexing agent component of the copper plating solution is maintained at between about 0.005 M and 10.0 M, but must be greater than the total metal concentration in solution.
• the complexing agent component of a copper plating solution causes the solution to be highly alkaline and therefore somewhat unstable (due to too large a potential difference between the copper( ⁇ )-cobalt(II) redox couple),
• an acid is added to the plating solution in sufficient quantities to make the solution acidic with a pH ⁇ about 6.4.
• a buffering agent is added to make the solution acidic with a pH ⁇ about 6.4 and to prevent changes to the resulting pH of the solution after adjustment.
• an acid and/or a buffering agent is added to maintain the pH of the solution at between about 4.0 and 6.4.
• an acid and/or a buffering agent is added to maintain the pH of the solution at between about 4.3 and 4.6.
• the anionic species of the acid matches the respective anionic species of the co ⁇ er(H) and cobalt( ⁇ ) salt components of the copper plating solution, however it should be appreciated that the anionic species do not have to match.
• Acidic copper plating solutions have many operational advantages over alkaline plating solutions when utilized in an electroless copper deposition application. An acidic copper plating solution can inhibit the generation of H 2 as the copper(U)-cobalt(II) redox reaction takes place within the solution. This reduces void or occlusion formation in the copper layer that is deposited on the wafer surface.
• an acidic copper plating solution improves the adhesion of the reduced copper ions that are deposited on the wafer surface. This is often a problem observed with alkaline copper plating solutions due to the formation of hydroxyl- terminated groups, inhibiting the nucleation reaction and causing reduced nucleation density, larger grain growth and increased surface roughness. Still further, for applications such as direct patterning of copper lines by electroless deposition of copper through a patterned film, an acidic copper plating solution helps improve selectivity over the barrier and mask materials on the wafer surface, and allows the use of a standard positive resist photomask resin material that would normally dissolve in a basic solution.
• copper deposited using the acidic copper plating solutions exhibits lower pre-anneal resistance characteristics than with copper deposited using alkaline copper plating solutions.
• the pH of the copper plating solutions can essentially be adjusted to any acidic (i.e., pH ⁇ 7.0) environment so long as the resulting deposition rates of copper during the electroless copper deposition process is acceptable for the targeted application and the solution exhibits all the operational advantages discussed above.
• the pH of the solution is lowered (i.e., made more acidic), the copper deposition rate decreases.
• the copper plating solution is maintained at a temperature between about 0°Celsius ( 0 C) and 7O 0 C during an electroless copper deposition process. In one exemplary embodiment, the copper plating solution is maintained at a temperature of between about 20 0 C and 70 0 C during the electroless copper deposition process.
• temperature impacts the nucleation density and deposition rate of copper (mainly, the nucleation density and deposition rate of copper is directly proportional to temperature) to the wafer surface during copper deposition.
• the deposition rate impacts the thickness of the resulting copper layer and the nucleation density impacts void space, occlusion formation within the copper layer, and adhesion of the copper layer to the underlying barrier material. Therefore, the temperature settings for the copper plating solution during the electroless copper deposition process would be optimized to provide dense copper nucleation and controlled deposition following the nucleation phase of the bulk deposition to optimize the copper deposition rate to achieve copper film thickness targets.
• a copper nitrate/diethylenetri amine plating solution is disclosed with a pH of 4.3 and including 0.05M Cu(NO 3 J 2 , 0.6M Diethylenetriamine, and 0.15M Co(NO 3 J 2 .
• the copper nitrate/diethylenetri amine plating solution is disclosed with a pH of 4.6 and including 0.05M Cu(NO 3 J 2 , 0.6M Diethylenetriamine, and 0.15M Co(NO 3 J 2 . It should be understood that the concentrations of the Cu(NO 3 J 2 , Diethylenetriamine, and
• Co(NO 3 J 2 components of the copper nitrate/diethylenetriamine plating solution can be adjusted to any value up to the solubility limit of the components so long as the resulting solution can effectuate an acceptable copper deposition rate for the pH setting of the solution.
• the formulation i.e. Plating Solution A Formulation
• Plating Solution A Formulation
• a 20 milliliter (mLJ batch of Plating Solution A is formulated by initially adding about 11.2 mL of water (H 2 O) to an appropriately sized container followed by about 1.0 mL of IM Cu(NO 3 ) 2 solution, about 3.5 mL of 5M HNO 3 solution and about 1.3 mL of Diethylenetriamine (99%). At this point in the formulation the copper ions released by the Cu(NO 3 ) 2 component are complex ed with the Diethylenetriamine molecules in the mixture.
• the resulting mixture is then deoxygenated using an inert gas such as Argon gas introduced to the mixture prior to adding Co(NO 3 ) 2 solution to prevent the premature oxidation of the cobalt element of the Co(NO 3 ) 2 solution.
• Argon gas can be delivered to the mixture using any commercially available gas sparging system so long as the gas is delivered in sufficient quantities to deoxygenate the mixture to the required level for the electroless copper deposition application.
• other types of inert gas e.g., N 2 , etc.
• about 3.0 mL of Co(NO 3 ) 2 solution is added to the mixture to complete the formulation of Plating Solution A.
• the formulation (i.e. Plating Solution B Formulation) of Plating Solution B is disclosed.
• a 20 milliliter (mL) batch of Plating Solution B is formulated by initially adding about 11.7 mL of water (H 2 O) to an appropriately sized container followed by about 1.0 mL of IM Cu(NO 3 ) 2 solution, about 3.0 mL of 5M HNO 3 solution and about 1.3 mL of Diethylenetriamine (99%).
• the resulting mixture is then deoxygenated using Argon gas introduced to the mixture prior to the addition of about 3.0 mL of IM Co(NO 3 J 2 solution to complete the formulation of Plating Solution B.
• an electroless copper plating solution is prepared by first pre- mixing a portion of the complexing agent component with the copper salt component, acid component, and water into a into a first pre-mixed solution. The remaining portion of the complexing agent component is pre-mixed with the cobalt salt component into a second pre- mixed solution. The first premixed solution and second pre-mixed solution are then added into an appropriate container for final mixing into the final electroless copper plating solution prior to use in an electroless copper deposition operation.
• a copper(II) tetrafluoroborate/diethylenetriamine plating solution is disclosed with a pH of 5.4 and including 0.05M Cu(BF 4 ) 2 , 0.6M Diethylenetriamine, and 0.15M Co(BF 4 ) 2 .
• the copper(II) tetrafluoroborate/diethylenetriamine plating solution is disclosed with a pH of 6.15 and including 0.05M Cu(BF 4 ) 2 , 0.6M Diethylenetriamine, and 0.15M Co(BF 4 ) 2 .
• the concentrations of the Cu(BF 4 ) 2 , Diethylenetriamine, and Co(BF 4 ) 2 components of the copper tetrafluoroborate/diethylenetriamine plating solution can be adjusted to any value up to the solubility limit of the components so long as the resulting solution can effectuate an acceptable copper deposition rate for the pH setting of the solution.
• the formulation i.e. Plating Solution C Formulation
• Plating Solution C Formulation
• a 20.03 milliliter (mL) batch of Plating Solution C is formulated by initially adding about 13.2 mL of water (H 2 O) to an appropriately sized container followed by about 1.0 mL of IM Cu(BF 4 ) 2 solution, about 1.0 mL of 5M H BF 4 solution and about 1.3 mL of Diethylenetriamine (99%). The resulting mixture is then deoxygenated using Argon gas introduced to the mixture prior to the addition of about 3.53 mL of 0.85M Co(BF 4 ) 2 solution to complete the formulation of Plating Solution C. [0032] Remaining with Table 1, in another embodiment, the formulation (i.e. Plating Solution D Formulation) of Plating Solution D is disclosed.
• a 20.0 milliliter (mL) batch of Plating Solution D is formulated by initially adding about 13.47 mL of water (H 2 O) to an appropriately sized container followed by about 1.0 mL of IM Cu(BF 4 ) 2 solution, about 0.7 mL of 5M H BF 4 solution and about 1.3 mL of Diethylenetriamine (99%). The resulting mixture is then deoxygenated using Argon gas introduced to the mixture prior to the addition of about 3.53 mL of 0.85M Co(BF 4 ) 2 solution to complete the formulation of Plating Solution D.

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