CN101490308B - 用于无电铜沉积的电镀溶液 - Google Patents

用于无电铜沉积的电镀溶液 Download PDF

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Publication number
CN101490308B
CN101490308B CN2007800264525A CN200780026452A CN101490308B CN 101490308 B CN101490308 B CN 101490308B CN 2007800264525 A CN2007800264525 A CN 2007800264525A CN 200780026452 A CN200780026452 A CN 200780026452A CN 101490308 B CN101490308 B CN 101490308B
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CN
China
Prior art keywords
copper
electroplate liquid
aqueous
salt composition
electrolytic copper
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CN2007800264525A
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English (en)
Chinese (zh)
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CN101490308A (zh
Inventor
阿尔及尔达斯·瓦斯凯利斯
尤金尼厄斯·诺尔库斯
简·翟希欧斯科因
阿尔东娜·杰阁弥尼恩
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Lam Research Corp
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Lam Research Corp
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1687—Process conditions with ionic liquid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2007800264525A 2006-05-11 2007-05-10 用于无电铜沉积的电镀溶液 Active CN101490308B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/382,906 US7306662B2 (en) 2006-05-11 2006-05-11 Plating solution for electroless deposition of copper
US11/382,906 2006-05-11
PCT/US2007/068691 WO2007134182A1 (en) 2006-05-11 2007-05-10 Plating solution for electroless deposition of copper

Publications (2)

Publication Number Publication Date
CN101490308A CN101490308A (zh) 2009-07-22
CN101490308B true CN101490308B (zh) 2012-07-18

Family

ID=38683921

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800264525A Active CN101490308B (zh) 2006-05-11 2007-05-10 用于无电铜沉积的电镀溶液

Country Status (8)

Country Link
US (1) US7306662B2 (enExample)
EP (1) EP2016207B1 (enExample)
JP (1) JP4975099B2 (enExample)
KR (1) KR101392120B1 (enExample)
CN (1) CN101490308B (enExample)
MY (1) MY144454A (enExample)
TW (1) TWI390079B (enExample)
WO (1) WO2007134182A1 (enExample)

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US7686875B2 (en) * 2006-05-11 2010-03-30 Lam Research Corporation Electroless deposition from non-aqueous solutions
US8298325B2 (en) * 2006-05-11 2012-10-30 Lam Research Corporation Electroless deposition from non-aqueous solutions
US7752996B2 (en) * 2006-05-11 2010-07-13 Lam Research Corporation Apparatus for applying a plating solution for electroless deposition
JP4755573B2 (ja) * 2006-11-30 2011-08-24 東京応化工業株式会社 処理装置および処理方法、ならびに表面処理治具
US7749893B2 (en) * 2006-12-18 2010-07-06 Lam Research Corporation Methods and systems for low interfacial oxide contact between barrier and copper metallization
US20080152823A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Self-limiting plating method
US7794530B2 (en) * 2006-12-22 2010-09-14 Lam Research Corporation Electroless deposition of cobalt alloys
US7521358B2 (en) * 2006-12-26 2009-04-21 Lam Research Corporation Process integration scheme to lower overall dielectric constant in BEoL interconnect structures
US8058164B2 (en) * 2007-06-04 2011-11-15 Lam Research Corporation Methods of fabricating electronic devices using direct copper plating
US8323460B2 (en) * 2007-06-20 2012-12-04 Lam Research Corporation Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal
US8673769B2 (en) 2007-06-20 2014-03-18 Lam Research Corporation Methods and apparatuses for three dimensional integrated circuits
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
US20090162681A1 (en) * 2007-12-21 2009-06-25 Artur Kolics Activation solution for electroless plating on dielectric layers
WO2014076431A2 (fr) 2012-11-15 2014-05-22 Alchimer Dispositif semi-conducteur et son procede de fabrication
US9095518B2 (en) 2013-08-01 2015-08-04 Liqwd, Inc. Methods for fixing hair and skin
US12233289B2 (en) 2013-08-01 2025-02-25 Olaplex, Inc. Methods for fixing hair and skin
PT3142637T (pt) 2014-05-16 2020-10-15 Olaplex Inc Formulações e métodos de tratamento de queratina
US9287183B1 (en) * 2015-03-31 2016-03-15 Lam Research Corporation Using electroless deposition as a metrology tool to highlight contamination, residue, and incomplete via etch
KR102661331B1 (ko) 2015-04-24 2024-04-30 올라플렉스, 인코포레이티드 릴렉싱된 헤어의 처리 방법
EP3288520A4 (en) 2015-05-01 2018-12-12 L'oreal Use of active agents during chemical treatments
CN105470169A (zh) * 2015-11-20 2016-04-06 中国科学院微电子研究所 面向GaN器件的介质生长系统及其操作方法
WO2017091797A1 (en) 2015-11-24 2017-06-01 L'oreal Compositions for treating the hair
CN108495613B (zh) 2015-11-24 2021-12-10 欧莱雅 用于处理头发的组合物
JP6873994B2 (ja) 2015-11-24 2021-05-19 ロレアル 毛髪を処置するための組成物
CN106048569A (zh) * 2016-06-12 2016-10-26 含山县朝霞铸造有限公司 一种铝合金压铸件表面处理方法及其产品
US9872821B1 (en) 2016-07-12 2018-01-23 Liqwd, Inc. Methods and formulations for curling hair
US9713583B1 (en) 2016-07-12 2017-07-25 Liqwd, Inc. Methods and formulations for curling hair
KR101734840B1 (ko) * 2016-11-11 2017-05-15 일진머티리얼즈 주식회사 내굴곡성이 우수한 이차전지용 전해동박 및 그의 제조방법
US11135150B2 (en) 2016-11-21 2021-10-05 L'oreal Compositions and methods for improving the quality of chemically treated hair
US9974725B1 (en) 2017-05-24 2018-05-22 L'oreal Methods for treating chemically relaxed hair
WO2019133785A1 (en) 2017-12-29 2019-07-04 L'oreal Compositions for altering the color of hair
US11090249B2 (en) 2018-10-31 2021-08-17 L'oreal Hair treatment compositions, methods, and kits for treating hair
JP7441523B2 (ja) * 2019-02-01 2024-03-01 国立大学法人大阪大学 ５’位修飾ヌクレオシドおよびそれを用いたヌクレオチド
US11419809B2 (en) 2019-06-27 2022-08-23 L'oreal Hair treatment compositions and methods for treating hair

Citations (2)

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Publication number Priority date Publication date Assignee Title
US4650691A (en) * 1983-09-28 1987-03-17 C. Uyemura & Co., Ltd. Electroless copper plating bath and method
US6911068B2 (en) * 2001-10-02 2005-06-28 Shipley Company, L.L.C. Plating bath and method for depositing a metal layer on a substrate

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Patent Citations (2)

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US4650691A (en) * 1983-09-28 1987-03-17 C. Uyemura & Co., Ltd. Electroless copper plating bath and method
US6911068B2 (en) * 2001-10-02 2005-06-28 Shipley Company, L.L.C. Plating bath and method for depositing a metal layer on a substrate

Also Published As

Publication number Publication date
WO2007134182A1 (en) 2007-11-22
TW200811312A (en) 2008-03-01
EP2016207B1 (en) 2018-01-10
US20070261594A1 (en) 2007-11-15
MY144454A (en) 2011-09-30
KR20090017582A (ko) 2009-02-18
TWI390079B (zh) 2013-03-21
US7306662B2 (en) 2007-12-11
EP2016207A4 (en) 2015-05-27
CN101490308A (zh) 2009-07-22
JP4975099B2 (ja) 2012-07-11
KR101392120B1 (ko) 2014-05-07
JP2009536987A (ja) 2009-10-22
EP2016207A1 (en) 2009-01-21

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