JP5628199B2 - 非水溶液からの無電解析出 - Google Patents
非水溶液からの無電解析出 Download PDFInfo
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- JP5628199B2 JP5628199B2 JP2011542275A JP2011542275A JP5628199B2 JP 5628199 B2 JP5628199 B2 JP 5628199B2 JP 2011542275 A JP2011542275 A JP 2011542275A JP 2011542275 A JP2011542275 A JP 2011542275A JP 5628199 B2 JP5628199 B2 JP 5628199B2
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- Prior art keywords
- solution
- copper
- cobalt
- salt component
- anhydrous
- Prior art date
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- 230000008021 deposition Effects 0.000 title description 36
- 239000007864 aqueous solution Substances 0.000 title description 4
- 239000010949 copper Substances 0.000 claims description 179
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 173
- 229910052802 copper Inorganic materials 0.000 claims description 162
- 238000007747 plating Methods 0.000 claims description 135
- 239000008139 complexing agent Substances 0.000 claims description 46
- 229920000768 polyamine Polymers 0.000 claims description 28
- 239000003125 aqueous solvent Substances 0.000 claims description 22
- 150000001879 copper Chemical class 0.000 claims description 21
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 19
- 150000001868 cobalt Chemical class 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 150000004820 halides Chemical class 0.000 claims description 14
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical group [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 14
- -1 diamine compound Chemical class 0.000 claims description 10
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 8
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 7
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 claims description 6
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 6
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 5
- 239000002798 polar solvent Substances 0.000 claims description 5
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 claims description 4
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 claims description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 4
- 239000012454 non-polar solvent Substances 0.000 claims description 4
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 claims description 3
- 229910001981 cobalt nitrate Inorganic materials 0.000 claims description 3
- 229910000361 cobalt sulfate Inorganic materials 0.000 claims description 3
- 229940044175 cobalt sulfate Drugs 0.000 claims description 3
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 3
- 229940011182 cobalt acetate Drugs 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 209
- 238000000151 deposition Methods 0.000 description 37
- 239000000203 mixture Substances 0.000 description 33
- 239000010410 layer Substances 0.000 description 31
- 230000002378 acidificating effect Effects 0.000 description 21
- 150000003839 salts Chemical class 0.000 description 21
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical class [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 18
- 239000000126 substance Substances 0.000 description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 15
- 238000002360 preparation method Methods 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 229910000001 cobalt(II) carbonate Inorganic materials 0.000 description 10
- 230000006911 nucleation Effects 0.000 description 10
- 238000010899 nucleation Methods 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 239000003638 chemical reducing agent Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- 150000001450 anions Chemical class 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000003635 deoxygenating effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000454 electroless metal deposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 230000033444 hydroxylation Effects 0.000 description 2
- 238000005805 hydroxylation reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- FDHRGQIRBRQMPF-UHFFFAOYSA-N 2h-pyridin-1-amine Chemical compound NN1CC=CC=C1 FDHRGQIRBRQMPF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- 229910021580 Cobalt(II) chloride Inorganic materials 0.000 description 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- OJWUUBGCASMJOR-UHFFFAOYSA-N N'-(2-aminoethyl)ethane-1,2-diamine cobalt(2+) dinitrate Chemical compound [N+](=O)([O-])[O-].[Co+2].NCCNCCN.[N+](=O)([O-])[O-] OJWUUBGCASMJOR-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- MKRZOSLIMIMVJX-UHFFFAOYSA-N [N+](=O)([O-])[O-].[Co+2].NCCNCCN.NCCNCCN.[N+](=O)([O-])[O-] Chemical compound [N+](=O)([O-])[O-].[Co+2].NCCNCCN.NCCNCCN.[N+](=O)([O-])[O-] MKRZOSLIMIMVJX-UHFFFAOYSA-N 0.000 description 1
- 150000008043 acidic salts Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- UWVVFJRBSCGSCQ-UHFFFAOYSA-L cobalt(2+) ethane-1,2-diamine sulfate Chemical compound S(=O)(=O)([O-])[O-].[Co+2].C(CN)N.C(CN)N UWVVFJRBSCGSCQ-UHFFFAOYSA-L 0.000 description 1
- GJZRSEPNBCRCJW-UHFFFAOYSA-L cobalt(2+);ethane-1,2-diamine;sulfate Chemical compound [Co+2].NCCN.[O-]S([O-])(=O)=O GJZRSEPNBCRCJW-UHFFFAOYSA-L 0.000 description 1
- 229910000335 cobalt(II) sulfate Inorganic materials 0.000 description 1
- BLQSYEDFGRJUQG-UHFFFAOYSA-N copper N'-(2-aminoethyl)ethane-1,2-diamine dinitrate Chemical compound [N+](=O)([O-])[O-].[Cu+2].NCCNCCN.[N+](=O)([O-])[O-] BLQSYEDFGRJUQG-UHFFFAOYSA-N 0.000 description 1
- PBZWNRDWUDVFOL-UHFFFAOYSA-N copper N'-(2-aminoethyl)ethane-1,2-diamine dinitrate Chemical compound [N+](=O)([O-])[O-].[Cu+2].NCCNCCN.NCCNCCN.[N+](=O)([O-])[O-] PBZWNRDWUDVFOL-UHFFFAOYSA-N 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 229910001497 copper(II) tetrafluoroborate Inorganic materials 0.000 description 1
- SDWVYGAODWSQNO-UHFFFAOYSA-N copper;cobalt(2+) Chemical compound [Co+2].[Cu+2] SDWVYGAODWSQNO-UHFFFAOYSA-N 0.000 description 1
- GPNKJBLELXHFFQ-UHFFFAOYSA-L copper;ethane-1,2-diamine;sulfate Chemical compound [Cu+2].NCCN.NCCN.[O-]S([O-])(=O)=O GPNKJBLELXHFFQ-UHFFFAOYSA-L 0.000 description 1
- LQTVMAGOCSAAGX-UHFFFAOYSA-L copper;ethane-1,2-diamine;sulfate Chemical compound [Cu+2].NCCN.[O-]S([O-])(=O)=O LQTVMAGOCSAAGX-UHFFFAOYSA-L 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- WIYCQLLGDNXIBA-UHFFFAOYSA-L disodium;3-(3-sulfonatopropyldisulfanyl)propane-1-sulfonate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)CCCSSCCCS([O-])(=O)=O WIYCQLLGDNXIBA-UHFFFAOYSA-L 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- GKQPCPXONLDCMU-CCEZHUSRSA-N lacidipine Chemical compound CCOC(=O)C1=C(C)NC(C)=C(C(=O)OCC)C1C1=CC=CC=C1\C=C\C(=O)OC(C)(C)C GKQPCPXONLDCMU-CCEZHUSRSA-N 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000012457 nonaqueous media Substances 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- MGNVWUDMMXZUDI-UHFFFAOYSA-N propane-1,3-disulfonic acid Chemical compound OS(=O)(=O)CCCS(O)(=O)=O MGNVWUDMMXZUDI-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
本出願は、「Plating Solution for Electroless Deposition of Copper(銅の無電解析出用めっき溶液)」の名称で2006年5月11日に出願された米国特許7,306,662および「Plating Solutions for Electroless Deposition of Copper(銅の無電解析出用めっき溶液)」の名称で2006年6月28日に出願された米国特許7,297,190の一部継続出願である、「Apparatus for Applying A Plating Solution for Electroless Deposition(無電解析出用めっき溶液を用いる装置)」という名称で2006年12月15日に出願された米国特許出願No.11/611,316の一部継続出願であり、該出願に基づく優先権を主張するものである。これらの各出願の開示内容は、あらゆる目的でその全体を参照することにより本明細書に組み込まれる。
(硝酸塩系銅めっき溶液調製)
この実施例1では、濃度0.05Mの硝酸銅(Cu(NO3)2)と、濃度0.15Mの硝酸コバルト(Co(NO3)2)と、濃度0.6Mのエチレンジアミン(すなわち、ジアミン系錯化剤)と、濃度0.875Mの硝酸(HNO3)と、濃度3ミリモル濃度(mM)の臭化カリウム(すなわち、ハロゲン化物成分)と、濃度が0.000141Mから0.000282Mの範囲のPSP(すなわち、化学光沢剤)と、が含有された、pH6.0の硝酸系銅めっき溶液を調製する。アルゴンガスを用いて、混合物の脱酸素化を行ない、銅めっき溶液の酸化を抑制する。
0.051グラムのCuCl2を4ミリリットル(ml)のジメチルスルホキシド(DMSO)に溶解させた。この際、溶解を促進させるために、適度に加熱した。ここで、CuCl2は無水組成のものを用いた。次に、溶解混合物に濃塩酸を0.2ないし0.7ミリリットル加えた。濃塩酸も無水のものを用いた。後述するように、塩酸の代わりに酢酸を用いてもよい。次に、11.45モル(M)のエチレンジアミンを0.63ミリリットル加えた。得られた溶液を溶液Aと呼ぶ。0.214グラムのCoCl2 を(6-X)ミリリットルのDMSOに溶解させて、溶液Bとなる第2の溶液を作成した。ここで、Xは、溶液Aの調製に用いた塩酸の容積を示す。この場合には、溶解を促進させるために、適度に加熱した。CoCl2も無水組成のものを用いた。アルゴン攪拌により溶液Aを脱気してもよいが、この脱気処理は必須ではない。
本発明は、たとえば、以下のような態様で実現することもできる。
適用例1
非水無電解銅めっき溶液であって、
無水銅塩成分と、
無水コバルト塩成分と、
非水錯化剤と、
臭化カリウムと、
非水溶媒と、を含有する溶液。
適用例2
請求項1に記載の溶液であって、
前記無水銅塩成分が、塩化銅、酢酸銅、硝酸銅および硫酸銅からなる群から選択される、溶液。
適用例3
請求項1に記載の溶液であって、
前記無水コバルト塩成分が、塩化コバルト、酢酸コバルト、硝酸コバルトおよび硫酸コバルトからなる群から選択される、溶液。
適用例4
請求項1に記載の溶液であって、
前記非水溶媒が極性溶媒である、溶液。
適用例5
請求項1に記載の溶液であって、
前記非水溶媒が非極性溶媒である、溶液。
適用例6
請求項1に記載の溶液であって、
非水錯化剤が、エチレンジアミンまたはプロピレンジアミンのいずれか1つである、溶液。
適用例7
非水無電解銅めっき溶液であって、
無水銅塩成分と、
無水コバルト塩成分と、
ポリアミン錯化剤と、
ハロゲン化物源と、
硫酸、塩酸、硝酸、酢酸およびホウフッ化水素酸の無水組成からなる群から選択されるpH調整物質と、
非水溶媒と、を含有する溶液。
適用例8
請求項7に記載の溶液であって、
前記ポリアミン錯化剤が非水である、溶液。
適用例9
請求項7に記載の溶液であって、
前記ポリアミン錯化剤が、ジアミン化合物、トリアミン化合物および芳香族ポリアミン化合物からなる群から選択される、溶液。
適用例10
請求項7に記載の溶液であって、
前記ハロゲン化物源が臭化カリウムである、溶液。
適用例11
請求項7に記載の溶液であって、
塩基性である溶液。
適用例12
請求項7に記載の溶液であって、
酸性である溶液。
適用例13
請求項7に記載の溶液であって、
前記無水銅塩成分の濃度は、約0.01モルから前記非水銅塩に対する溶解限度までの範囲である、溶液。
適用例14
請求項7に記載の溶液であって、
前記無水コバルト塩成分の濃度は、約0.01モルから前記非水コバルト塩に対する溶解限度までの範囲である、溶液。
適用例15
請求項7に記載の溶液であって、
前記ポリアミン錯化剤の濃度は、前記無水銅塩成分の濃度および前記無水コバルト塩成分の濃度の合計と少なくとも同じである、溶液。
適用例16
請求項7に記載の溶液であって、
前記非水溶媒が極性溶媒である、溶液。
適用例17
請求項7に記載の溶液であって、
前記非水溶媒が非極性溶媒である、溶液。
適用例18
非水無電解銅めっき溶液であって、
無水銅塩成分と、
無水コバルト塩成分と、
非水錯化剤と、
ハロゲン化物源と、
非水溶媒と、を含有し、
酸性である溶液。
Claims (17)
- 非水無電解銅めっき溶液であって、
無水銅塩成分と、
無水コバルト塩成分と、
非水錯化剤と、
非水溶媒と、を含有し、
前記溶液は、非水であり、反応性の金属の表面に適用された際の酸化を防ぐために水を含まず、
前記コバルト塩成分は、前記錯化剤で錯形成され、前記反応性の金属の表面に適用された際に、前記銅塩成分を還元して還元銅を析出させる、溶液。 - 請求項1に記載の溶液であって、
前記無水銅塩成分が、塩化銅、酢酸銅、硝酸銅および硫酸銅からなる群から選択される、溶液。 - 請求項1または2に記載の溶液であって、
前記無水コバルト塩成分が、塩化コバルト、酢酸コバルト、硝酸コバルトおよび硫酸コバルトからなる群から選択される、溶液。 - 請求項1から3のいずれかに記載の溶液であって、
前記非水溶媒が極性溶媒である、溶液。 - 請求項1から3のいずれかに記載の溶液であって、
前記非水溶媒が非極性溶媒である、溶液。 - 請求項1から5のいずれかに記載の溶液であって、
非水錯化剤が、エチレンジアミンまたはプロピレンジアミンのいずれか1つである、溶液。 - 請求項1から6のいずれかに記載の溶液であって、さらに、
ハロゲン化物源を含む、溶液。 - 請求項7に記載の溶液であって、
前記ハロゲン化物源は、臭化カリウムである、溶液。 - 非水無電解銅めっき溶液であって、
無水銅塩成分と、
無水コバルト塩成分と、
ポリアミン錯化剤と、
ハロゲン化物源と、
非水溶媒と、を含有し、
前記溶液は、非水であり、反応性の金属の表面に適用された際の酸化を防ぐために水を含まず、
前記コバルト塩成分は、前記錯化剤で錯形成され、前記反応性の金属の表面に適用された際に、前記銅塩成分を還元して還元銅を析出させる、溶液。 - 請求項9に記載の溶液であって、
前記ポリアミン錯化剤が非水である、溶液。 - 請求項9または10に記載の溶液であって、
前記ポリアミン錯化剤が、ジアミン化合物、トリアミン化合物および芳香族ポリアミン化合物からなる群から選択される、溶液。 - 請求項9から11のいずれかに記載の溶液であって、
前記ハロゲン化物源が臭化カリウムである、溶液。 - 請求項9から12のいずれかに記載の溶液であって、
前記無水銅塩成分の濃度は、約0.01モルから前記無水銅塩に対する溶解限度までの範囲である、溶液。 - 請求項9から13のいずれかに記載の溶液であって、
前記無水コバルト塩成分の濃度は、約0.01モルから前記無水コバルト塩に対する溶解限度までの範囲である、溶液。 - 請求項9から14のいずれかに記載の溶液であって、
前記ポリアミン錯化剤の濃度は、前記無水銅塩成分の濃度および前記無水コバルト塩成分の濃度の合計と少なくとも同じである、溶液。 - 請求項9から15のいずれかに記載の溶液であって、
前記非水溶媒が極性溶媒である、溶液。 - 請求項9から15のいずれかに記載の溶液であって、
前記非水溶媒が非極性溶媒である、溶液。
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PCT/US2009/067594 WO2010080331A2 (en) | 2008-12-18 | 2009-12-10 | Electroless depositions from non-aqueous solutions |
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US7794530B2 (en) * | 2006-12-22 | 2010-09-14 | Lam Research Corporation | Electroless deposition of cobalt alloys |
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US3653953A (en) * | 1970-01-26 | 1972-04-04 | North American Rockwell | Nonaqueous electroless plating |
US3635761A (en) * | 1970-05-05 | 1972-01-18 | Mobil Oil Corp | Electroless deposition of metals |
US3962494A (en) * | 1971-07-29 | 1976-06-08 | Photocircuits Division Of Kollmorgan Corporation | Sensitized substrates for chemical metallization |
US4301196A (en) * | 1978-09-13 | 1981-11-17 | Kollmorgen Technologies Corp. | Electroless copper deposition process having faster plating rates |
DE3148330A1 (de) * | 1981-12-07 | 1983-06-09 | Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Verfahren zur stromlosen abscheidung von edelmetallschichten auf oberflaechen von unedlen metallen |
JPH03215676A (ja) * | 1990-01-20 | 1991-09-20 | Tokin Corp | 無電解めっき剤,及びそれを用いた無電解めっき方法 |
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US6291025B1 (en) * | 1999-06-04 | 2001-09-18 | Argonide Corporation | Electroless coatings formed from organic liquids |
JP2001020077A (ja) * | 1999-07-07 | 2001-01-23 | Sony Corp | 無電解めっき方法及び無電解めっき液 |
KR20010101292A (ko) * | 1999-10-19 | 2001-11-14 | 마에다 시게루 | 도금방법, 배선형성방법 및 이들 장치 |
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US7147767B2 (en) * | 2002-12-16 | 2006-12-12 | 3M Innovative Properties Company | Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor |
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US7306662B2 (en) * | 2006-05-11 | 2007-12-11 | Lam Research Corporation | Plating solution for electroless deposition of copper |
US7752996B2 (en) * | 2006-05-11 | 2010-07-13 | Lam Research Corporation | Apparatus for applying a plating solution for electroless deposition |
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