JP4969748B2 - 不揮発性半導体記憶装置デバイス及び不揮発性記憶装置セルの製造方法 - Google Patents

不揮発性半導体記憶装置デバイス及び不揮発性記憶装置セルの製造方法 Download PDF

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Publication number
JP4969748B2
JP4969748B2 JP2001520477A JP2001520477A JP4969748B2 JP 4969748 B2 JP4969748 B2 JP 4969748B2 JP 2001520477 A JP2001520477 A JP 2001520477A JP 2001520477 A JP2001520477 A JP 2001520477A JP 4969748 B2 JP4969748 B2 JP 4969748B2
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diffusion region
semiconductor substrate
layer
control gate
region
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JP2003508921A (ja
JP2003508921A5 (enExample
Inventor
ラン，シャン・ラン
ル，タオ・チェン
ワン，マム・ツン
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マクロニックス・アメリカ・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2001520477A 1999-08-27 2000-08-25 不揮発性半導体記憶装置デバイス及び不揮発性記憶装置セルの製造方法 Expired - Fee Related JP4969748B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38448099A 1999-08-27 1999-08-27
US09/384,480 1999-08-27
PCT/US2000/023504 WO2001017031A1 (en) 1999-08-27 2000-08-25 Easy shrinkable novel non-volatile semiconductor memory cell utilizing split dielectric floating gate and method for making same

Publications (3)

Publication Number Publication Date
JP2003508921A JP2003508921A (ja) 2003-03-04
JP2003508921A5 JP2003508921A5 (enExample) 2011-08-18
JP4969748B2 true JP4969748B2 (ja) 2012-07-04

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JP2001520477A Expired - Fee Related JP4969748B2 (ja) 1999-08-27 2000-08-25 不揮発性半導体記憶装置デバイス及び不揮発性記憶装置セルの製造方法

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Country Link
JP (1) JP4969748B2 (enExample)
CN (1) CN1229873C (enExample)
AU (1) AU6940900A (enExample)
WO (1) WO2001017031A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251189B2 (en) 2009-02-09 2022-02-15 Longitude Flash Memory Solutions Ltd. Gate fringing effect based channel formation for semiconductor device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4923321B2 (ja) * 2000-09-12 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置の動作方法
JP4608815B2 (ja) * 2001-06-08 2011-01-12 ソニー株式会社 不揮発性半導体記憶装置の製造方法
JP4393106B2 (ja) * 2003-05-14 2010-01-06 シャープ株式会社 表示用駆動装置及び表示装置、並びに携帯電子機器
US7312495B2 (en) * 2005-04-07 2007-12-25 Spansion Llc Split gate multi-bit memory cell
CN100411144C (zh) * 2005-08-16 2008-08-13 力晶半导体股份有限公司 非挥发性存储器及其制造方法
JP2008053270A (ja) * 2006-08-22 2008-03-06 Nec Electronics Corp 半導体記憶装置、及びその製造方法
KR100843550B1 (ko) * 2006-11-06 2008-07-04 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145080A (ja) * 1991-11-25 1993-06-11 Kawasaki Steel Corp 不揮発性記憶装置
JPH05251669A (ja) * 1992-03-06 1993-09-28 Matsushita Electron Corp 半導体記憶装置およびその書き換え方法
JPH07169864A (ja) * 1993-12-16 1995-07-04 Kawasaki Steel Corp 不揮発性半導体記憶装置
JPH1174389A (ja) * 1997-06-16 1999-03-16 Motorola Inc スプリット・ゲート・メモリ装置
JP2001102466A (ja) * 1999-08-05 2001-04-13 Halo Lsi Design & Device Technol Inc 不揮発性メモリセルおよびそのプログラム方法ならびに不揮発性メモリアレイ
JP2001156188A (ja) * 1999-03-08 2001-06-08 Toshiba Corp 半導体記憶装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0571692B1 (en) * 1992-05-27 1998-07-22 STMicroelectronics S.r.l. EPROM cell with a readily scalable down interpoly dielectric
US5619052A (en) * 1994-09-29 1997-04-08 Macronix International Co., Ltd. Interpoly dielectric structure in EEPROM device
US5783849A (en) * 1996-02-23 1998-07-21 Citizen Watch Co., Ltd. Semiconductor device
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US5879993A (en) * 1997-09-29 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride spacer technology for flash EPROM
US6020606A (en) * 1998-03-20 2000-02-01 United Silicon Incorporated Structure of a memory cell

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145080A (ja) * 1991-11-25 1993-06-11 Kawasaki Steel Corp 不揮発性記憶装置
JPH05251669A (ja) * 1992-03-06 1993-09-28 Matsushita Electron Corp 半導体記憶装置およびその書き換え方法
JPH07169864A (ja) * 1993-12-16 1995-07-04 Kawasaki Steel Corp 不揮発性半導体記憶装置
JPH1174389A (ja) * 1997-06-16 1999-03-16 Motorola Inc スプリット・ゲート・メモリ装置
JP2001156188A (ja) * 1999-03-08 2001-06-08 Toshiba Corp 半導体記憶装置およびその製造方法
JP2001102466A (ja) * 1999-08-05 2001-04-13 Halo Lsi Design & Device Technol Inc 不揮発性メモリセルおよびそのプログラム方法ならびに不揮発性メモリアレイ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251189B2 (en) 2009-02-09 2022-02-15 Longitude Flash Memory Solutions Ltd. Gate fringing effect based channel formation for semiconductor device
US11950412B2 (en) 2009-02-09 2024-04-02 Longitude Flash Memory Solutions Ltd. Gate fringing effect based channel formation for semiconductor device

Also Published As

Publication number Publication date
CN1229873C (zh) 2005-11-30
JP2003508921A (ja) 2003-03-04
CN1375114A (zh) 2002-10-16
AU6940900A (en) 2001-03-26
WO2001017031A1 (en) 2001-03-08

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