JP2003508921A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003508921A5 JP2003508921A5 JP2001520477A JP2001520477A JP2003508921A5 JP 2003508921 A5 JP2003508921 A5 JP 2003508921A5 JP 2001520477 A JP2001520477 A JP 2001520477A JP 2001520477 A JP2001520477 A JP 2001520477A JP 2003508921 A5 JP2003508921 A5 JP 2003508921A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38448099A | 1999-08-27 | 1999-08-27 | |
| US09/384,480 | 1999-08-27 | ||
| PCT/US2000/023504 WO2001017031A1 (en) | 1999-08-27 | 2000-08-25 | Easy shrinkable novel non-volatile semiconductor memory cell utilizing split dielectric floating gate and method for making same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003508921A JP2003508921A (ja) | 2003-03-04 |
| JP2003508921A5 true JP2003508921A5 (enExample) | 2011-08-18 |
| JP4969748B2 JP4969748B2 (ja) | 2012-07-04 |
Family
ID=23517472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001520477A Expired - Fee Related JP4969748B2 (ja) | 1999-08-27 | 2000-08-25 | 不揮発性半導体記憶装置デバイス及び不揮発性記憶装置セルの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4969748B2 (enExample) |
| CN (1) | CN1229873C (enExample) |
| AU (1) | AU6940900A (enExample) |
| WO (1) | WO2001017031A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4923321B2 (ja) * | 2000-09-12 | 2012-04-25 | ソニー株式会社 | 不揮発性半導体記憶装置の動作方法 |
| JP4608815B2 (ja) * | 2001-06-08 | 2011-01-12 | ソニー株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP4393106B2 (ja) * | 2003-05-14 | 2010-01-06 | シャープ株式会社 | 表示用駆動装置及び表示装置、並びに携帯電子機器 |
| US7312495B2 (en) * | 2005-04-07 | 2007-12-25 | Spansion Llc | Split gate multi-bit memory cell |
| CN100411144C (zh) * | 2005-08-16 | 2008-08-13 | 力晶半导体股份有限公司 | 非挥发性存储器及其制造方法 |
| JP2008053270A (ja) * | 2006-08-22 | 2008-03-06 | Nec Electronics Corp | 半導体記憶装置、及びその製造方法 |
| KR100843550B1 (ko) * | 2006-11-06 | 2008-07-04 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 제조방법 |
| US8692310B2 (en) | 2009-02-09 | 2014-04-08 | Spansion Llc | Gate fringing effect based channel formation for semiconductor device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05145080A (ja) * | 1991-11-25 | 1993-06-11 | Kawasaki Steel Corp | 不揮発性記憶装置 |
| JPH05251669A (ja) * | 1992-03-06 | 1993-09-28 | Matsushita Electron Corp | 半導体記憶装置およびその書き換え方法 |
| DE69226358T2 (de) * | 1992-05-27 | 1998-11-26 | Sgs-Thomson Microelectronics S.R.L., Agrate Brianza, Mailand/Milano | EPROM-Zelle mit Dielektricum zwischen Polysiliziumschichten, das leicht in kleinen Dimensionen herstellbar ist |
| JPH07169864A (ja) * | 1993-12-16 | 1995-07-04 | Kawasaki Steel Corp | 不揮発性半導体記憶装置 |
| US5619052A (en) * | 1994-09-29 | 1997-04-08 | Macronix International Co., Ltd. | Interpoly dielectric structure in EEPROM device |
| US5783849A (en) * | 1996-02-23 | 1998-07-21 | Citizen Watch Co., Ltd. | Semiconductor device |
| US5768192A (en) * | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| US5969383A (en) * | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
| US5879993A (en) * | 1997-09-29 | 1999-03-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride spacer technology for flash EPROM |
| US6020606A (en) * | 1998-03-20 | 2000-02-01 | United Silicon Incorporated | Structure of a memory cell |
| JP3973819B2 (ja) * | 1999-03-08 | 2007-09-12 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
| US6255166B1 (en) * | 1999-08-05 | 2001-07-03 | Aalo Lsi Design & Device Technology, Inc. | Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
-
2000
- 2000-08-25 AU AU69409/00A patent/AU6940900A/en not_active Abandoned
- 2000-08-25 WO PCT/US2000/023504 patent/WO2001017031A1/en not_active Ceased
- 2000-08-25 JP JP2001520477A patent/JP4969748B2/ja not_active Expired - Fee Related
- 2000-08-25 CN CN00812126.5A patent/CN1229873C/zh not_active Expired - Fee Related