CN1229873C - 利用分开的介电浮栅的新型易收缩非易失性的半导体存储单元及其制造方法 - Google Patents

利用分开的介电浮栅的新型易收缩非易失性的半导体存储单元及其制造方法 Download PDF

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Publication number
CN1229873C
CN1229873C CN00812126.5A CN00812126A CN1229873C CN 1229873 C CN1229873 C CN 1229873C CN 00812126 A CN00812126 A CN 00812126A CN 1229873 C CN1229873 C CN 1229873C
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CN
China
Prior art keywords
diffusion region
layer
semiconductor substrate
region
gate
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Expired - Fee Related
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CN00812126.5A
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English (en)
Chinese (zh)
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CN1375114A (zh
Inventor
龙翔澜
卢道政
王明宗
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Macronix America Inc
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Macronix America Inc
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Publication of CN1375114A publication Critical patent/CN1375114A/zh
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Publication of CN1229873C publication Critical patent/CN1229873C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CN00812126.5A 1999-08-27 2000-08-25 利用分开的介电浮栅的新型易收缩非易失性的半导体存储单元及其制造方法 Expired - Fee Related CN1229873C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38448099A 1999-08-27 1999-08-27
US09/384,480 1999-08-27

Publications (2)

Publication Number Publication Date
CN1375114A CN1375114A (zh) 2002-10-16
CN1229873C true CN1229873C (zh) 2005-11-30

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Family Applications (1)

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CN00812126.5A Expired - Fee Related CN1229873C (zh) 1999-08-27 2000-08-25 利用分开的介电浮栅的新型易收缩非易失性的半导体存储单元及其制造方法

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JP (1) JP4969748B2 (enExample)
CN (1) CN1229873C (enExample)
AU (1) AU6940900A (enExample)
WO (1) WO2001017031A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4923321B2 (ja) * 2000-09-12 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置の動作方法
JP4608815B2 (ja) * 2001-06-08 2011-01-12 ソニー株式会社 不揮発性半導体記憶装置の製造方法
JP4393106B2 (ja) * 2003-05-14 2010-01-06 シャープ株式会社 表示用駆動装置及び表示装置、並びに携帯電子機器
US7312495B2 (en) * 2005-04-07 2007-12-25 Spansion Llc Split gate multi-bit memory cell
CN100411144C (zh) * 2005-08-16 2008-08-13 力晶半导体股份有限公司 非挥发性存储器及其制造方法
JP2008053270A (ja) * 2006-08-22 2008-03-06 Nec Electronics Corp 半導体記憶装置、及びその製造方法
KR100843550B1 (ko) * 2006-11-06 2008-07-04 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조방법
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145080A (ja) * 1991-11-25 1993-06-11 Kawasaki Steel Corp 不揮発性記憶装置
JPH05251669A (ja) * 1992-03-06 1993-09-28 Matsushita Electron Corp 半導体記憶装置およびその書き換え方法
EP0571692B1 (en) * 1992-05-27 1998-07-22 STMicroelectronics S.r.l. EPROM cell with a readily scalable down interpoly dielectric
JPH07169864A (ja) * 1993-12-16 1995-07-04 Kawasaki Steel Corp 不揮発性半導体記憶装置
US5619052A (en) * 1994-09-29 1997-04-08 Macronix International Co., Ltd. Interpoly dielectric structure in EEPROM device
US5783849A (en) * 1996-02-23 1998-07-21 Citizen Watch Co., Ltd. Semiconductor device
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US5969383A (en) * 1997-06-16 1999-10-19 Motorola, Inc. Split-gate memory device and method for accessing the same
US5879993A (en) * 1997-09-29 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride spacer technology for flash EPROM
US6020606A (en) * 1998-03-20 2000-02-01 United Silicon Incorporated Structure of a memory cell
JP3973819B2 (ja) * 1999-03-08 2007-09-12 株式会社東芝 半導体記憶装置およびその製造方法
US6255166B1 (en) * 1999-08-05 2001-07-03 Aalo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, method of programming the same and nonvolatile memory array

Also Published As

Publication number Publication date
JP4969748B2 (ja) 2012-07-04
JP2003508921A (ja) 2003-03-04
CN1375114A (zh) 2002-10-16
AU6940900A (en) 2001-03-26
WO2001017031A1 (en) 2001-03-08

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Granted publication date: 20051130

Termination date: 20190825