JP4969024B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP4969024B2 JP4969024B2 JP2004011324A JP2004011324A JP4969024B2 JP 4969024 B2 JP4969024 B2 JP 4969024B2 JP 2004011324 A JP2004011324 A JP 2004011324A JP 2004011324 A JP2004011324 A JP 2004011324A JP 4969024 B2 JP4969024 B2 JP 4969024B2
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- JP
- Japan
- Prior art keywords
- laser
- film
- light
- semiconductor film
- shielding film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims description 112
- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 55
- 239000013078 crystal Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000011109 contamination Methods 0.000 claims description 13
- 230000002265 prevention Effects 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000001737 promoting effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 174
- 230000003287 optical effect Effects 0.000 description 46
- 238000005224 laser annealing Methods 0.000 description 25
- 239000011521 glass Substances 0.000 description 13
- 238000005499 laser crystallization Methods 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 9
- 239000003550 marker Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
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- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004011324A JP4969024B2 (ja) | 2003-01-21 | 2004-01-20 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003012147 | 2003-01-21 | ||
| JP2003012147 | 2003-01-21 | ||
| JP2004011324A JP4969024B2 (ja) | 2003-01-21 | 2004-01-20 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004247717A JP2004247717A (ja) | 2004-09-02 |
| JP2004247717A5 JP2004247717A5 (enExample) | 2007-02-22 |
| JP4969024B2 true JP4969024B2 (ja) | 2012-07-04 |
Family
ID=33031945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004011324A Expired - Fee Related JP4969024B2 (ja) | 2003-01-21 | 2004-01-20 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4969024B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4481040B2 (ja) * | 2003-03-07 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5388433B2 (ja) * | 2006-10-03 | 2014-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8071908B1 (en) * | 2008-03-26 | 2011-12-06 | Ultratech, Inc. | Edge with minimal diffraction effects |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57104217A (en) * | 1980-12-22 | 1982-06-29 | Toshiba Corp | Surface heat treatment |
| JPH084067B2 (ja) * | 1985-10-07 | 1996-01-17 | 工業技術院長 | 半導体装置の製造方法 |
| JPH0652712B2 (ja) * | 1986-03-07 | 1994-07-06 | 工業技術院長 | 半導体装置 |
| JP3017277B2 (ja) * | 1989-12-07 | 2000-03-06 | 株式会社リコー | 光アニール装置 |
| KR100270618B1 (ko) * | 1992-06-30 | 2000-12-01 | 윤종용 | 다결정 실리콘 박막의 제조방법 |
| JPH0792501A (ja) * | 1993-07-30 | 1995-04-07 | A G Technol Kk | 画像表示用の基板とその製造方法、およびｔｆｔ表示素子 |
| JPH07302907A (ja) * | 1994-04-28 | 1995-11-14 | A G Technol Kk | アクティブマトリクス表示素子およびその製造方法 |
| JPH0897141A (ja) * | 1994-09-22 | 1996-04-12 | A G Technol Kk | 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置 |
| JPH09237767A (ja) * | 1996-02-29 | 1997-09-09 | Sharp Corp | 半導体装置の製造方法 |
| JP2002043245A (ja) * | 2000-07-31 | 2002-02-08 | Fujitsu Ltd | 結晶性半導体薄膜の形成方法 |
| JP2002057344A (ja) * | 2000-08-14 | 2002-02-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2002176007A (ja) * | 2000-12-08 | 2002-06-21 | Mitsubishi Electric Corp | レーザ処理装置のレーザパワーの測定方法と測定装置 |
-
2004
- 2004-01-20 JP JP2004011324A patent/JP4969024B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004247717A (ja) | 2004-09-02 |
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