JP4969024B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4969024B2
JP4969024B2 JP2004011324A JP2004011324A JP4969024B2 JP 4969024 B2 JP4969024 B2 JP 4969024B2 JP 2004011324 A JP2004011324 A JP 2004011324A JP 2004011324 A JP2004011324 A JP 2004011324A JP 4969024 B2 JP4969024 B2 JP 4969024B2
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Japan
Prior art keywords
laser
film
light
semiconductor film
shielding film
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JP2004011324A
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Japanese (ja)
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JP2004247717A (ja
JP2004247717A5 (cg-RX-API-DMAC10.html
Inventor
幸一郎 田中
敦生 磯部
智昭 森若
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004011324A priority Critical patent/JP4969024B2/ja
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Publication of JP2004247717A5 publication Critical patent/JP2004247717A5/ja
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  • Recrystallisation Techniques (AREA)
JP2004011324A 2003-01-21 2004-01-20 半導体装置の作製方法 Expired - Fee Related JP4969024B2 (ja)

Priority Applications (1)

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JP2004011324A JP4969024B2 (ja) 2003-01-21 2004-01-20 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003012147 2003-01-21
JP2003012147 2003-01-21
JP2004011324A JP4969024B2 (ja) 2003-01-21 2004-01-20 半導体装置の作製方法

Publications (3)

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JP2004247717A JP2004247717A (ja) 2004-09-02
JP2004247717A5 JP2004247717A5 (cg-RX-API-DMAC10.html) 2007-02-22
JP4969024B2 true JP4969024B2 (ja) 2012-07-04

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JP2004011324A Expired - Fee Related JP4969024B2 (ja) 2003-01-21 2004-01-20 半導体装置の作製方法

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JP (1) JP4969024B2 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4481040B2 (ja) * 2003-03-07 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5388433B2 (ja) * 2006-10-03 2014-01-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8071908B1 (en) * 2008-03-26 2011-12-06 Ultratech, Inc. Edge with minimal diffraction effects

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104217A (en) * 1980-12-22 1982-06-29 Toshiba Corp Surface heat treatment
JPH084067B2 (ja) * 1985-10-07 1996-01-17 工業技術院長 半導体装置の製造方法
JPH0652712B2 (ja) * 1986-03-07 1994-07-06 工業技術院長 半導体装置
JP3017277B2 (ja) * 1989-12-07 2000-03-06 株式会社リコー 光アニール装置
KR100270618B1 (ko) * 1992-06-30 2000-12-01 윤종용 다결정 실리콘 박막의 제조방법
JPH0792501A (ja) * 1993-07-30 1995-04-07 A G Technol Kk 画像表示用の基板とその製造方法、およびｔｆｔ表示素子
JPH07302907A (ja) * 1994-04-28 1995-11-14 A G Technol Kk アクティブマトリクス表示素子およびその製造方法
JPH0897141A (ja) * 1994-09-22 1996-04-12 A G Technol Kk 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置
JPH09237767A (ja) * 1996-02-29 1997-09-09 Sharp Corp 半導体装置の製造方法
JP2002043245A (ja) * 2000-07-31 2002-02-08 Fujitsu Ltd 結晶性半導体薄膜の形成方法
JP2002057344A (ja) * 2000-08-14 2002-02-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2002176007A (ja) * 2000-12-08 2002-06-21 Mitsubishi Electric Corp レーザ処理装置のレーザパワーの測定方法と測定装置

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JP2004247717A (ja) 2004-09-02

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