JP4963156B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4963156B2
JP4963156B2 JP2004286632A JP2004286632A JP4963156B2 JP 4963156 B2 JP4963156 B2 JP 4963156B2 JP 2004286632 A JP2004286632 A JP 2004286632A JP 2004286632 A JP2004286632 A JP 2004286632A JP 4963156 B2 JP4963156 B2 JP 4963156B2
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JP
Japan
Prior art keywords
film
insulating film
etching
gas
semiconductor device
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Expired - Fee Related
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JP2004286632A
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English (en)
Japanese (ja)
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JP2005129920A5 (https=
JP2005129920A (ja
Inventor
友彦 佐藤
滋春 物江
慎也 笹川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004286632A priority Critical patent/JP4963156B2/ja
Publication of JP2005129920A publication Critical patent/JP2005129920A/ja
Publication of JP2005129920A5 publication Critical patent/JP2005129920A5/ja
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Publication of JP4963156B2 publication Critical patent/JP4963156B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004286632A 2003-10-03 2004-09-30 半導体装置の作製方法 Expired - Fee Related JP4963156B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004286632A JP4963156B2 (ja) 2003-10-03 2004-09-30 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003345457 2003-10-03
JP2003345457 2003-10-03
JP2004286632A JP4963156B2 (ja) 2003-10-03 2004-09-30 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005129920A JP2005129920A (ja) 2005-05-19
JP2005129920A5 JP2005129920A5 (https=) 2007-10-11
JP4963156B2 true JP4963156B2 (ja) 2012-06-27

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Family Applications (1)

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JP2004286632A Expired - Fee Related JP4963156B2 (ja) 2003-10-03 2004-09-30 半導体装置の作製方法

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JP (1) JP4963156B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4597790B2 (ja) * 2005-06-24 2010-12-15 株式会社半導体エネルギー研究所 半導体装置及びその作製方法、並びに電子機器
KR101600887B1 (ko) * 2009-07-06 2016-03-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
JP5275415B2 (ja) * 2011-06-20 2013-08-28 シャープ株式会社 結晶太陽電池セルおよび結晶太陽電池セルの製造方法
JP5677404B2 (ja) * 2012-12-07 2015-02-25 シャープ株式会社 結晶太陽電池セル
WO2014155691A1 (ja) * 2013-03-29 2014-10-02 富士通セミコンダクター株式会社 半導体装置とその製造方法
JP6517535B2 (ja) * 2015-02-25 2019-05-22 エルジー ディスプレイ カンパニー リミテッド シリコン系薄膜半導体装置、およびシリコン系薄膜半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2545450B2 (ja) * 1988-10-24 1996-10-16 富士通株式会社 半導体装置の製造方法
JPH0637069A (ja) * 1992-07-17 1994-02-10 Kawasaki Steel Corp 半導体装置の製造方法
JP2950110B2 (ja) * 1993-09-24 1999-09-20 住友金属工業株式会社 プラズマエッチング方法
JPH09252001A (ja) * 1996-03-18 1997-09-22 Nkk Corp 半導体装置に用いられる配線層およびその製造方法、ならびにそのような配線層を用いた半導体装置の製造方法
JPH10284299A (ja) * 1997-04-02 1998-10-23 Applied Materials Inc 高周波導入部材及びプラズマ装置
JP2001168098A (ja) * 1999-12-10 2001-06-22 Seiko Epson Corp 半導体装置及びパターンデータ作成方法
JP4132556B2 (ja) * 2000-03-22 2008-08-13 三菱電機株式会社 液晶表示装置および液晶表示装置の製造方法
JP2002164342A (ja) * 2000-07-21 2002-06-07 Canon Sales Co Inc 半導体装置及びその製造方法
AU2002222632A1 (en) * 2000-12-14 2002-06-24 Tokyo Electron Limited Method of etching porous insulating film, dual damascene process, and semiconductor device
JP3504247B2 (ja) * 2000-12-15 2004-03-08 株式会社東芝 半導体装置の製造方法
JP4008352B2 (ja) * 2000-12-21 2007-11-14 東京エレクトロン株式会社 絶縁膜のエッチング方法
JP2002289594A (ja) * 2001-03-28 2002-10-04 Nec Corp 半導体装置およびその製造方法
JP2002057122A (ja) * 2001-06-12 2002-02-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP4969001B2 (ja) * 2001-09-20 2012-07-04 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP4104426B2 (ja) * 2002-10-30 2008-06-18 富士通株式会社 半導体装置の製造方法
JP2004172456A (ja) * 2002-11-21 2004-06-17 Seiko Epson Corp 半導体装置の製造方法

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JP2005129920A (ja) 2005-05-19

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