JP4940327B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP4940327B2
JP4940327B2 JP2010104454A JP2010104454A JP4940327B2 JP 4940327 B2 JP4940327 B2 JP 4940327B2 JP 2010104454 A JP2010104454 A JP 2010104454A JP 2010104454 A JP2010104454 A JP 2010104454A JP 4940327 B2 JP4940327 B2 JP 4940327B2
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JP
Japan
Prior art keywords
layer
intermediate layer
type
refractive index
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010104454A
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English (en)
Japanese (ja)
Other versions
JP2011233785A (ja
JP2011233785A5 (https=
Inventor
義和 山岡
茂郎 矢田
亜津美 梅田
大二 兼松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2010104454A priority Critical patent/JP4940327B2/ja
Priority to PCT/JP2011/060035 priority patent/WO2011136162A1/ja
Publication of JP2011233785A publication Critical patent/JP2011233785A/ja
Publication of JP2011233785A5 publication Critical patent/JP2011233785A5/ja
Application granted granted Critical
Publication of JP4940327B2 publication Critical patent/JP4940327B2/ja
Priority to US13/616,502 priority patent/US20130000711A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
JP2010104454A 2010-04-28 2010-04-28 光電変換装置 Expired - Fee Related JP4940327B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010104454A JP4940327B2 (ja) 2010-04-28 2010-04-28 光電変換装置
PCT/JP2011/060035 WO2011136162A1 (ja) 2010-04-28 2011-04-25 光電変換装置
US13/616,502 US20130000711A1 (en) 2010-04-28 2012-09-14 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010104454A JP4940327B2 (ja) 2010-04-28 2010-04-28 光電変換装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011275222A Division JP2012060167A (ja) 2011-12-16 2011-12-16 光電変換装置

Publications (3)

Publication Number Publication Date
JP2011233785A JP2011233785A (ja) 2011-11-17
JP2011233785A5 JP2011233785A5 (https=) 2012-01-26
JP4940327B2 true JP4940327B2 (ja) 2012-05-30

Family

ID=44861462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010104454A Expired - Fee Related JP4940327B2 (ja) 2010-04-28 2010-04-28 光電変換装置

Country Status (3)

Country Link
US (1) US20130000711A1 (https=)
JP (1) JP4940327B2 (https=)
WO (1) WO2011136162A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5367780B2 (ja) * 2011-08-24 2013-12-11 シャープ株式会社 光電変換素子
JP5367781B2 (ja) * 2011-08-25 2013-12-11 シャープ株式会社 光電変換素子
WO2013065538A1 (ja) * 2011-11-03 2013-05-10 三洋電機株式会社 光電変換装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3311534B2 (ja) * 1995-02-08 2002-08-05 三洋電機株式会社 光起電力素子
JPH11103082A (ja) * 1997-09-26 1999-04-13 Canon Inc 光起電力素子及びその作製方法
US8207010B2 (en) * 2007-06-05 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
JP5400322B2 (ja) * 2008-05-30 2014-01-29 株式会社カネカ シリコン系薄膜太陽電池およびその製造方法
TW201021229A (en) * 2008-11-21 2010-06-01 Ind Tech Res Inst Solar cell having reflective structure

Also Published As

Publication number Publication date
US20130000711A1 (en) 2013-01-03
WO2011136162A1 (ja) 2011-11-03
JP2011233785A (ja) 2011-11-17

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