JP5367781B2 - 光電変換素子 - Google Patents
光電変換素子 Download PDFInfo
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- JP5367781B2 JP5367781B2 JP2011183770A JP2011183770A JP5367781B2 JP 5367781 B2 JP5367781 B2 JP 5367781B2 JP 2011183770 A JP2011183770 A JP 2011183770A JP 2011183770 A JP2011183770 A JP 2011183770A JP 5367781 B2 JP5367781 B2 JP 5367781B2
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- nitride semiconductor
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 claims abstract description 394
- 150000004767 nitrides Chemical class 0.000 claims abstract description 392
- 239000000203 mixture Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 359
- 239000013078 crystal Substances 0.000 description 21
- 239000002356 single layer Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
実施例においては、図1に示す光電変換素子100を作製した。まず、基板200として、フッ化水素濃度が47質量%のフッ化水素水溶液で表面を洗浄したGaN基板を用意した。
Claims (11)
- 基板と、
前記基板上に設けられたn型窒化物半導体層と、
前記n型窒化物半導体層上に設けられたAlx0Iny0Gaz0N(0≦x0<1、0<y0<1、0≦z0<1)の式で表わされるi型窒化物半導体層と、
前記i型窒化物半導体層上に設けられたp型窒化物半導体層と、
前記n型窒化物半導体層と前記i型窒化物半導体層との間に設けられたAlx1Iny1Gaz1N(0≦x1<1、0<y1<1、0≦z1<1)の式で表わされる窒化物半導体下地層と、
前記i型窒化物半導体層と前記p型窒化物半導体層との間に設けられたAlx2Iny2Gaz2N(0≦x2<1、0<y2<1、0≦z2<1)の式で表わされる窒化物半導体光反射層とを備え、
前記i型窒化物半導体層は、前記窒化物半導体下地層と前記窒化物半導体光反射層との間に挟まれており、
前記i型窒化物半導体層のIn組成比y0と、前記窒化物半導体下地層のIn組成比y1と、前記窒化物半導体光反射層のIn組成比y2とが、0<y2<y0<y1の関係式を満たし、
前記窒化物半導体下地層の厚さが、臨界膜厚以上の厚さであって、
前記窒化物半導体下地層の前記In組成比y1が、さらに0.25≦y1≦0.5の関係式を満たし、
前記窒化物半導体下地層の厚さが、5nm以上10nm以下であり、
前記n型窒化物半導体層の絶対屈折率が、前記窒化物半導体下地層の絶対屈折率よりも小さい、光電変換素子。 - 前記窒化物半導体光反射層は、前記i型窒化物半導体層と前記p型窒化物半導体層との間のバンドギャップを有する、請求項1に記載の光電変換素子。
- 前記窒化物半導体光反射層の厚さが、1nm以上10nm以下である、請求項1または2に記載の光電変換素子。
- 前記p型窒化物半導体層の絶対屈折率が、前記窒化物半導体光反射層の絶対屈折率よりも小さい、請求項1から3のいずれかに記載の光電変換素子。
- 前記p型窒化物半導体層上に透明導電層をさらに備え、
前記透明導電層は、Zn、In、SnおよびMgからなる群から選択された少なくとも1種を含む、請求項1から4のいずれかに記載の光電変換素子。 - 前記透明導電層の絶対屈折率が2.3未満である、請求項5に記載の光電変換素子。
- 前記透明導電層の厚さが、250nm以上500nm以下である、請求項5または6に記載の光電変換素子。
- 前記基板は、AlxInyGazN(0≦x≦1、0≦y≦1、0≦z≦1、x+y+z≠0)、GaP、GaAs、NdGaO3、LiGaO2、Al2O3、MgAl2O4、ZnO、Si、SiC、SiGeまたはZrB2の式で表わされる基板である、請求項1から7のいずれかに記載の光電変換素子。
- 前記n型窒化物半導体層の形成側とは反対側の前記基板の表面上に金属光反射層をさらに備えた、請求項1から8のいずれかに記載の光電変換素子。
- 前記金属光反射層は、Ag層である、請求項9に記載の光電変換素子。
- 前記金属光反射層の厚さが、10nm以上1000nm以下である、請求項9または10に記載の光電変換素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011183770A JP5367781B2 (ja) | 2011-08-25 | 2011-08-25 | 光電変換素子 |
PCT/JP2012/064910 WO2013027469A1 (ja) | 2011-08-25 | 2012-06-11 | 光電変換素子 |
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JP2011183770A JP5367781B2 (ja) | 2011-08-25 | 2011-08-25 | 光電変換素子 |
Publications (2)
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JP2013045952A JP2013045952A (ja) | 2013-03-04 |
JP5367781B2 true JP5367781B2 (ja) | 2013-12-11 |
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JP (1) | JP5367781B2 (ja) |
WO (1) | WO2013027469A1 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3794144B2 (ja) * | 1997-12-26 | 2006-07-05 | 富士ゼロックス株式会社 | 光半導体素子およびその製造方法 |
US7847186B2 (en) * | 2003-07-24 | 2010-12-07 | Kaneka Corporation | Silicon based thin film solar cell |
JP5326812B2 (ja) * | 2009-05-22 | 2013-10-30 | 富士通株式会社 | 太陽電池 |
JP4940327B2 (ja) * | 2010-04-28 | 2012-05-30 | 三洋電機株式会社 | 光電変換装置 |
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2011
- 2011-08-25 JP JP2011183770A patent/JP5367781B2/ja not_active Expired - Fee Related
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- 2012-06-11 WO PCT/JP2012/064910 patent/WO2013027469A1/ja active Application Filing
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JP2013045952A (ja) | 2013-03-04 |
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