JP4939690B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4939690B2
JP4939690B2 JP2001022386A JP2001022386A JP4939690B2 JP 4939690 B2 JP4939690 B2 JP 4939690B2 JP 2001022386 A JP2001022386 A JP 2001022386A JP 2001022386 A JP2001022386 A JP 2001022386A JP 4939690 B2 JP4939690 B2 JP 4939690B2
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Japan
Prior art keywords
film
region
electrode
semiconductor
semiconductor layer
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Expired - Fee Related
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JP2001022386A
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English (en)
Japanese (ja)
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JP2002231952A5 (enExample
JP2002231952A (ja
Inventor
舜平 山崎
理 中村
崇 浜田
智史 村上
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001022386A priority Critical patent/JP4939690B2/ja
Priority to US10/058,158 priority patent/US6713323B2/en
Publication of JP2002231952A publication Critical patent/JP2002231952A/ja
Publication of JP2002231952A5 publication Critical patent/JP2002231952A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6721—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having lightly-doped extensions consisting of multiple lightly doped zones or having non-homogeneous dopant distributions, e.g. graded LDD

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001022386A 2001-01-30 2001-01-30 半導体装置の作製方法 Expired - Fee Related JP4939690B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001022386A JP4939690B2 (ja) 2001-01-30 2001-01-30 半導体装置の作製方法
US10/058,158 US6713323B2 (en) 2001-01-30 2002-01-29 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001022386A JP4939690B2 (ja) 2001-01-30 2001-01-30 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002231952A JP2002231952A (ja) 2002-08-16
JP2002231952A5 JP2002231952A5 (enExample) 2008-03-21
JP4939690B2 true JP4939690B2 (ja) 2012-05-30

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JP (1) JP4939690B2 (enExample)

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JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7045444B2 (en) 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
US6756608B2 (en) * 2001-08-27 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2003297750A (ja) * 2002-04-05 2003-10-17 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI265636B (en) * 2002-06-21 2006-11-01 Sanyo Electric Co Method for producing thin film transistor
JP4689155B2 (ja) * 2002-08-29 2011-05-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7161291B2 (en) * 2002-09-24 2007-01-09 Dai Nippon Printing Co., Ltd Display element and method for producing the same
US7335255B2 (en) * 2002-11-26 2008-02-26 Semiconductor Energy Laboratory, Co., Ltd. Manufacturing method of semiconductor device
JP4666907B2 (ja) * 2002-12-13 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7485579B2 (en) * 2002-12-13 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2004200378A (ja) * 2002-12-18 2004-07-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4663963B2 (ja) 2003-02-17 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4116465B2 (ja) * 2003-02-20 2008-07-09 株式会社日立製作所 パネル型表示装置とその製造方法および製造装置
AT500259B1 (de) * 2003-09-09 2007-08-15 Austria Tech & System Tech Dünnschichtanordnung und verfahren zum herstellen einer solchen dünnschichtanordnung
US6886330B1 (en) * 2003-11-19 2005-05-03 General Motors Corporation Hydroformed torque converter fluid coupling member
KR100611152B1 (ko) * 2003-11-27 2006-08-09 삼성에스디아이 주식회사 평판표시장치
US7507617B2 (en) * 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7276402B2 (en) * 2003-12-25 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8815060B2 (en) * 2004-08-30 2014-08-26 HGST Netherlands B.V. Method for minimizing magnetically dead interfacial layer during COC process
US7485511B2 (en) * 2005-06-01 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit device and method for manufacturing integrated circuit device
US8115206B2 (en) * 2005-07-22 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100683791B1 (ko) * 2005-07-30 2007-02-20 삼성에스디아이 주식회사 박막 트랜지스터 기판 및 이를 구비한 평판 디스플레이장치
US7601566B2 (en) 2005-10-18 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100805154B1 (ko) * 2006-09-15 2008-02-21 삼성에스디아이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US7923337B2 (en) * 2007-06-20 2011-04-12 International Business Machines Corporation Fin field effect transistor devices with self-aligned source and drain regions
US8395156B2 (en) * 2009-11-24 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5993141B2 (ja) * 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置
FR2978604B1 (fr) * 2011-07-28 2018-09-14 Soitec Procede de guerison de defauts dans une couche semi-conductrice
KR102236381B1 (ko) * 2014-07-18 2021-04-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
US10338446B2 (en) * 2014-12-16 2019-07-02 Sharp Kabushiki Kaisha Semiconductor device having low resistance source and drain regions
JP6977561B2 (ja) * 2015-11-18 2021-12-08 ソニーグループ株式会社 半導体装置および投射型表示装置
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US6713323B2 (en) 2004-03-30
JP2002231952A (ja) 2002-08-16
US20020102776A1 (en) 2002-08-01

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