JP4939689B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4939689B2
JP4939689B2 JP2001017691A JP2001017691A JP4939689B2 JP 4939689 B2 JP4939689 B2 JP 4939689B2 JP 2001017691 A JP2001017691 A JP 2001017691A JP 2001017691 A JP2001017691 A JP 2001017691A JP 4939689 B2 JP4939689 B2 JP 4939689B2
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Japan
Prior art keywords
region
insulating film
film
tft
semiconductor layer
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Expired - Fee Related
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JP2001017691A
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English (en)
Japanese (ja)
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JP2001290171A5 (OSRAM
JP2001290171A (ja
Inventor
達也 荒尾
英臣 須沢
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001017691A priority Critical patent/JP4939689B2/ja
Publication of JP2001290171A publication Critical patent/JP2001290171A/ja
Publication of JP2001290171A5 publication Critical patent/JP2001290171A5/ja
Application granted granted Critical
Publication of JP4939689B2 publication Critical patent/JP4939689B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001017691A 2000-01-26 2001-01-25 半導体装置およびその作製方法 Expired - Fee Related JP4939689B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001017691A JP4939689B2 (ja) 2000-01-26 2001-01-25 半導体装置およびその作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000017425 2000-01-26
JP2000017425 2000-01-26
JP2000-17425 2000-02-04
JP2000027597 2000-02-04
JP2000-27597 2000-02-04
JP2000027597 2000-02-04
JP2001017691A JP4939689B2 (ja) 2000-01-26 2001-01-25 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JP2001290171A JP2001290171A (ja) 2001-10-19
JP2001290171A5 JP2001290171A5 (OSRAM) 2008-03-13
JP4939689B2 true JP4939689B2 (ja) 2012-05-30

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ID=27342141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001017691A Expired - Fee Related JP4939689B2 (ja) 2000-01-26 2001-01-25 半導体装置およびその作製方法

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JP (1) JP4939689B2 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11271067B2 (en) 2019-01-25 2022-03-08 Samsung Display Co., Ltd. Conductive line for display device and display device including the same

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4402396B2 (ja) * 2003-08-07 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005093874A (ja) * 2003-09-19 2005-04-07 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP4413573B2 (ja) 2003-10-16 2010-02-10 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP2006098641A (ja) * 2004-09-29 2006-04-13 Seiko Epson Corp 薄膜半導体装置、電気光学装置、および電子機器
JP4301227B2 (ja) 2005-09-15 2009-07-22 セイコーエプソン株式会社 電気光学装置及びその製造方法、電子機器並びにコンデンサー
KR100830381B1 (ko) * 2005-09-15 2008-05-20 세이코 엡슨 가부시키가이샤 전기 광학 장치와 그 제조 방법, 전자 기기, 및 콘덴서
JP4655943B2 (ja) 2006-01-18 2011-03-23 セイコーエプソン株式会社 電気光学装置及びその製造方法、並びに導電層の接続構造
JP2008122504A (ja) * 2006-11-09 2008-05-29 Mitsubishi Electric Corp 表示装置とその製造方法
KR100886429B1 (ko) * 2007-05-14 2009-03-02 삼성전자주식회사 반도체 소자 및 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3070062B2 (ja) * 1990-03-29 2000-07-24 ソニー株式会社 液晶表示装置及びその製造方法
JP2618534B2 (ja) * 1990-12-20 1997-06-11 シャープ株式会社 アクティブマトリクス表示装置の製造方法
JP3106566B2 (ja) * 1991-07-26 2000-11-06 ソニー株式会社 液晶表示装置および製造方法
JPH0635004A (ja) * 1992-07-21 1994-02-10 Sony Corp 液晶表示装置
JPH06130413A (ja) * 1992-10-14 1994-05-13 Seiko Epson Corp 液晶表示装置の製造方法
JPH06175154A (ja) * 1992-12-03 1994-06-24 Seiko Epson Corp 液晶表示装置の製造方法
JP3474604B2 (ja) * 1993-05-25 2003-12-08 三菱電機株式会社 薄膜トランジスタおよびその製法
JPH08213625A (ja) * 1995-01-31 1996-08-20 Sony Corp アクティブマトリクス型表示装置及びその製造方法
JP3590156B2 (ja) * 1995-09-13 2004-11-17 株式会社東芝 液晶表示装置
JP3980117B2 (ja) * 1997-04-26 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11271067B2 (en) 2019-01-25 2022-03-08 Samsung Display Co., Ltd. Conductive line for display device and display device including the same
US11871628B2 (en) 2019-01-25 2024-01-09 Samsung Display Co., Ltd. Method of manufacturing conductive line for display device including the same

Also Published As

Publication number Publication date
JP2001290171A (ja) 2001-10-19

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