JP4933193B2 - 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法 - Google Patents

面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法 Download PDF

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JP4933193B2
JP4933193B2 JP2006217002A JP2006217002A JP4933193B2 JP 4933193 B2 JP4933193 B2 JP 4933193B2 JP 2006217002 A JP2006217002 A JP 2006217002A JP 2006217002 A JP2006217002 A JP 2006217002A JP 4933193 B2 JP4933193 B2 JP 4933193B2
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Japan
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layer
columnar
photonic crystal
dimensional photonic
emitting laser
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JP2006217002A
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Japanese (ja)
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JP2007073945A (ja
JP2007073945A5 (enExample
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達朗 内田
雄一郎 堀
護 内田
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Canon Inc
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Canon Inc
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JP2006217002A 2005-08-11 2006-08-09 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法 Expired - Fee Related JP4933193B2 (ja)

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JP2006217002A JP4933193B2 (ja) 2005-08-11 2006-08-09 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法

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JP2005233776 2005-08-11
JP2005233776 2005-08-11
JP2006217002A JP4933193B2 (ja) 2005-08-11 2006-08-09 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法

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JP2007073945A JP2007073945A (ja) 2007-03-22
JP2007073945A5 JP2007073945A5 (enExample) 2009-09-24
JP4933193B2 true JP4933193B2 (ja) 2012-05-16

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5089215B2 (ja) * 2007-03-28 2012-12-05 古河電気工業株式会社 窒化物化合物半導体層のエッチング方法及びその方法を用いて製造された半導体デバイス
JP5118544B2 (ja) 2007-05-15 2013-01-16 キヤノン株式会社 面発光レーザ素子
JP4350774B2 (ja) 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
US8194509B2 (en) * 2009-07-30 2012-06-05 Tdk Corporation Thermally-assisted magnetic recording head comprising light source with photonic-band layer
WO2011094391A1 (en) 2010-01-27 2011-08-04 Yale University Conductivity based selective etch for gan devices and applications thereof
WO2012109797A1 (zh) * 2011-02-18 2012-08-23 晶元光电股份有限公司 光电元件及其制造方法
JP5836609B2 (ja) * 2011-03-04 2015-12-24 キヤノン株式会社 面発光レーザ、アレイ及び画像形成装置
JP5906108B2 (ja) * 2012-03-23 2016-04-20 キヤノン株式会社 フォトニック結晶の製造方法及び面発光レーザの製造方法
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
EP3201952B1 (en) 2014-09-30 2023-03-29 Yale University A method for gan vertical microcavity surface emitting laser
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
US10554017B2 (en) 2015-05-19 2020-02-04 Yale University Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
JP7531805B2 (ja) 2020-06-30 2024-08-13 セイコーエプソン株式会社 発光装置およびプロジェクター
CN116526294B (zh) * 2023-06-26 2023-11-10 苏州长光华芯光电技术股份有限公司 一种半导体发光结构及其制备方法、封装模组

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284806A (ja) * 1997-04-10 1998-10-23 Canon Inc フォトニックバンド構造を有する垂直共振器レーザ
WO2002073753A2 (en) * 2001-03-09 2002-09-19 Alight Technologies A/S Mode control using transversal bandgap structure in vcsels
JP2004006567A (ja) * 2002-03-26 2004-01-08 Japan Science & Technology Corp 点欠陥３次元フォトニック結晶光共振器
JP4063740B2 (ja) * 2003-08-29 2008-03-19 国立大学法人京都大学 エアブリッジ構造を有する２次元フォトニック結晶及びその製造方法
JP4602701B2 (ja) * 2004-06-08 2010-12-22 株式会社リコー 面発光レーザ及び光伝送システム

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