JP4932173B2 - 膜パターンの形成方法 - Google Patents

膜パターンの形成方法 Download PDF

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Publication number
JP4932173B2
JP4932173B2 JP2005086872A JP2005086872A JP4932173B2 JP 4932173 B2 JP4932173 B2 JP 4932173B2 JP 2005086872 A JP2005086872 A JP 2005086872A JP 2005086872 A JP2005086872 A JP 2005086872A JP 4932173 B2 JP4932173 B2 JP 4932173B2
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Japan
Prior art keywords
film pattern
light
film
pattern
region
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Expired - Fee Related
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JP2005086872A
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English (en)
Japanese (ja)
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JP2005328037A5 (enExample
JP2005328037A (ja
Inventor
良明 山本
裕子 山本
幸恵 鈴木
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005086872A priority Critical patent/JP4932173B2/ja
Publication of JP2005328037A publication Critical patent/JP2005328037A/ja
Publication of JP2005328037A5 publication Critical patent/JP2005328037A5/ja
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Publication of JP4932173B2 publication Critical patent/JP4932173B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005086872A 2004-03-25 2005-03-24 膜パターンの形成方法 Expired - Fee Related JP4932173B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005086872A JP4932173B2 (ja) 2004-03-25 2005-03-24 膜パターンの形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004090377 2004-03-25
JP2004090377 2004-03-25
JP2005086872A JP4932173B2 (ja) 2004-03-25 2005-03-24 膜パターンの形成方法

Publications (3)

Publication Number Publication Date
JP2005328037A JP2005328037A (ja) 2005-11-24
JP2005328037A5 JP2005328037A5 (enExample) 2008-03-06
JP4932173B2 true JP4932173B2 (ja) 2012-05-16

Family

ID=35474100

Family Applications (1)

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JP2005086872A Expired - Fee Related JP4932173B2 (ja) 2004-03-25 2005-03-24 膜パターンの形成方法

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JP (1) JP4932173B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100178432A1 (en) * 2006-02-08 2010-07-15 Yoshikazu Kondo Method of Forming Pattern Film, and Pattern Film Forming Apparatus
JP4172521B2 (ja) * 2006-04-24 2008-10-29 セイコーエプソン株式会社 パターン形成方法及び液滴吐出装置
JP4969177B2 (ja) * 2006-08-18 2012-07-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7749907B2 (en) * 2006-08-25 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8786793B2 (en) * 2007-07-27 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5108628B2 (ja) * 2008-05-23 2012-12-26 克廣 前川 高密着性金属ナノ粒子焼結体膜の形成方法
WO2011027723A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101708180B1 (ko) 2010-08-25 2017-02-21 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법
TWI682190B (zh) * 2014-03-19 2020-01-11 日商豪雅冠得光電股份有限公司 光學元件
WO2015194128A1 (ja) * 2014-06-19 2015-12-23 株式会社Ｊｏｌｅｄ アクティブマトリクス型表示パネルの製造方法とアクティブマトリクス型表示パネル

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3560356B2 (ja) * 1994-01-31 2004-09-02 株式会社リコー フォトリソグラフィー方法
JP3920461B2 (ja) * 1998-06-15 2007-05-30 大日本印刷株式会社 レンズおよびその製造方法
ATE408850T1 (de) * 2001-04-10 2008-10-15 Harvard College Mikrolinse zur projektionslithographie und ihr herstellungsverfahren
JP2003260409A (ja) * 2002-03-08 2003-09-16 Fuji Photo Film Co Ltd ナノ粒子塗布物の製造方法
JP2003286100A (ja) * 2002-03-28 2003-10-07 Seiko Epson Corp 蛋白質の結晶化方法、蛋白質結晶化装置、及び蛋白質結晶化条件の探索方法
JP3587205B2 (ja) * 2002-04-03 2004-11-10 セイコーエプソン株式会社 光透過性シート、背面投写型プロジェクタ、光透過性シート製造装置、プログラムおよびコンピューター読み取り可能な記録媒体
JP2005062356A (ja) * 2003-08-08 2005-03-10 Seiko Epson Corp パターンの形成方法及び配線パターンの形成方法、電気光学装置及び電子機器

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Publication number Publication date
JP2005328037A (ja) 2005-11-24

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