JP4929612B2 - 半導体レーザ装置及びヒートシンク - Google Patents

半導体レーザ装置及びヒートシンク Download PDF

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Publication number
JP4929612B2
JP4929612B2 JP2005115118A JP2005115118A JP4929612B2 JP 4929612 B2 JP4929612 B2 JP 4929612B2 JP 2005115118 A JP2005115118 A JP 2005115118A JP 2005115118 A JP2005115118 A JP 2005115118A JP 4929612 B2 JP4929612 B2 JP 4929612B2
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Japan
Prior art keywords
semiconductor laser
water channel
forming plate
plate
flow path
Prior art date
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Expired - Fee Related
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JP2005115118A
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English (en)
Japanese (ja)
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JP2006294943A5 (enExample
JP2006294943A (ja
Inventor
秀和 川西
堅志 佐々木
雄一 浜口
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2005115118A priority Critical patent/JP4929612B2/ja
Priority to US11/279,279 priority patent/US8208510B2/en
Publication of JP2006294943A publication Critical patent/JP2006294943A/ja
Publication of JP2006294943A5 publication Critical patent/JP2006294943A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2005115118A 2005-04-12 2005-04-12 半導体レーザ装置及びヒートシンク Expired - Fee Related JP4929612B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005115118A JP4929612B2 (ja) 2005-04-12 2005-04-12 半導体レーザ装置及びヒートシンク
US11/279,279 US8208510B2 (en) 2005-04-12 2006-04-11 Semiconductor laser device and heat sink used therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005115118A JP4929612B2 (ja) 2005-04-12 2005-04-12 半導体レーザ装置及びヒートシンク

Publications (3)

Publication Number Publication Date
JP2006294943A JP2006294943A (ja) 2006-10-26
JP2006294943A5 JP2006294943A5 (enExample) 2008-04-24
JP4929612B2 true JP4929612B2 (ja) 2012-05-09

Family

ID=37083114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005115118A Expired - Fee Related JP4929612B2 (ja) 2005-04-12 2005-04-12 半導体レーザ装置及びヒートシンク

Country Status (2)

Country Link
US (1) US8208510B2 (enExample)
JP (1) JP4929612B2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
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US20060045153A1 (en) * 2004-08-31 2006-03-02 Carter Serrena M Low thermal expansion coefficient cooler for diode-laser bar
JP4819485B2 (ja) * 2005-11-18 2011-11-24 株式会社テクニスコ 流路形成体の製造方法
US20080008217A1 (en) * 2006-07-07 2008-01-10 Newport Corporation Laser device including heat sink with a tailored coefficient of thermal expansion
US20080008216A1 (en) * 2006-07-07 2008-01-10 Newport Corporation Laser device including heat sink with insert to provide a tailored coefficient of thermal expansion
DE102007016772A1 (de) * 2007-04-04 2008-10-16 Jenoptik Laserdiode Gmbh Stapelbare mehrschichtige Mikrokanalwärmesenke
JP2008300596A (ja) 2007-05-31 2008-12-11 Sony Corp ヒートシンクおよび半導体レーザ装置
EP2061078B1 (de) * 2007-11-16 2015-07-15 IQ evolution GmbH Kühlkörper
JPWO2009104558A1 (ja) 2008-02-19 2011-06-23 日本電気株式会社 光インターコネクション装置
KR101024664B1 (ko) 2008-06-09 2011-03-25 주식회사 코스텍시스 반도체 레이저 다이오드 패키지
JP2010087224A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｌｅｄ表示装置およびｌｅｄ表示装置用隔壁の製造方法
TW201018841A (en) * 2008-11-12 2010-05-16 Metal Ind Res & Dev Ct Unitized cooling module for laser diode
EP2426795B1 (en) * 2009-08-31 2017-07-05 Xi'an Focuslight Technologies Co., Ltd. Cooling module for laser, manufacture method thereof and semiconductor laser including the same
US8989226B2 (en) * 2009-08-31 2015-03-24 Xi'an Focuslight Technologies Co., Ltd. Cooling module for laser, fabricating method thereof, and semiconductor laser fabricated from the module
CN101640378B (zh) * 2009-08-31 2011-12-28 西安炬光科技有限公司 新型低成本水平阵列液体制冷半导体激光器及其制备方法
JP5218699B2 (ja) * 2010-03-10 2013-06-26 パナソニック株式会社 半導体レーザ装置
CN103155310B (zh) * 2010-10-15 2015-02-11 浜松光子学株式会社 半导体激光装置
JP2012089585A (ja) * 2010-10-15 2012-05-10 Hamamatsu Photonics Kk 半導体レーザ装置
JP2012089584A (ja) * 2010-10-15 2012-05-10 Hamamatsu Photonics Kk 半導体レーザ装置
JP5737275B2 (ja) * 2012-11-29 2015-06-17 株式会社豊田自動織機 インバータ装置
JP2014146663A (ja) * 2013-01-28 2014-08-14 Fujitsu Ltd 冷却装置の製造方法、冷却装置及びこれを備えた電子部品パッケージ
CN106663915B (zh) * 2014-07-14 2019-07-09 松下知识产权经营株式会社 半导体激光装置
EP3261197B1 (en) * 2015-02-16 2021-06-30 Mitsubishi Electric Corporation Semiconductor laser light source device, semiconductor laser light source system, and image display device
JP6553966B2 (ja) * 2015-07-14 2019-07-31 株式会社小糸製作所 光源モジュール
CN105305225B (zh) * 2015-11-04 2018-10-30 北京工业大学 一种半导体激光器冷却热沉装置
CN106887787B (zh) * 2015-12-15 2024-05-10 西安炬光科技股份有限公司 一种大通道半导体激光器液体制冷片及其激光器
CN108604768B (zh) * 2016-04-19 2020-03-24 松下知识产权经营株式会社 半导体激光器装置及其制造方法
JP6864688B2 (ja) * 2016-07-22 2021-04-28 ソニーセミコンダクタソリューションズ株式会社 素子構造体および発光装置
US10492334B2 (en) * 2017-01-12 2019-11-26 Rensselaer Polytechnic Institute Methods, systems, and assemblies for cooling an electronic component
CN109273981B (zh) * 2018-10-18 2020-08-18 西安炬光科技股份有限公司 一种用于半导体激光器的散热装置及激光器模块
DE102018127017A1 (de) * 2018-10-30 2020-04-30 Hanon Systems Vorrichtung zur Wärmeübertragung zum Temperieren von Batterien und Bauteilen der Leistungselektronik
US11095084B1 (en) * 2019-02-07 2021-08-17 Panasonic Intellectual Property Management Co., Ltd. Laser system with isolated optical cavity
US11699634B2 (en) * 2019-05-03 2023-07-11 Applied Materials, Inc. Water cooled plate for heat management in power amplifiers
US20230017562A1 (en) * 2020-03-05 2023-01-19 Mitsubishi Electric Corporation Semiconductor laser module
CN117497497B (zh) * 2023-12-29 2024-05-10 国网浙江省电力有限公司电力科学研究院 一种功率模块液冷散热封装结构

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US5105429A (en) * 1990-07-06 1992-04-14 The United States Of America As Represented By The Department Of Energy Modular package for cooling a laser diode array
US5294830A (en) * 1991-05-21 1994-03-15 International Business Machines Corporation Apparatus for indirect impingement cooling of integrated circuit chips
DE4315580A1 (de) * 1993-05-11 1994-11-17 Fraunhofer Ges Forschung Anordnung aus Laserdioden und einem Kühlsystem sowie Verfahren zu deren Herstellung
DE19506093C2 (de) * 1995-02-22 2000-12-07 Dilas Diodenlaser Gmbh Diodenlaserbauelement
JP3816194B2 (ja) * 1996-11-22 2006-08-30 ファナック株式会社 冷却装置、光源装置、面発光装置、およびその製造方法
JP4031903B2 (ja) * 1999-10-21 2008-01-09 イェーノプティク アクチエンゲゼルシャフト ダイオードレーザを冷却する装置
DE10011892A1 (de) * 2000-03-03 2001-09-20 Jenoptik Jena Gmbh Montagesubstrat und Wärmesenke für Hochleistungsdiodenlaserbarren
WO2002035666A1 (fr) * 2000-10-20 2002-05-02 Mitsubishi Denki Kabushiki Kaisha Refroidisseur, source de lumiere laser a semi-conducteurs, unite de source lumineuse, procede de production de cette unite et laser a corps solide
JP2003273441A (ja) * 2002-03-15 2003-09-26 Hamamatsu Photonics Kk ヒートシンク並びにこれを用いた半導体レーザ装置及び半導体レーザスタック装置
JP2004186527A (ja) * 2002-12-05 2004-07-02 Tecnisco Ltd レーザーダイオード冷却装置
US20040264519A1 (en) * 2003-06-24 2004-12-30 Morrell John Alan Filter bypass method and system for chiller loop to control purity levels

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Publication number Publication date
US20060227827A1 (en) 2006-10-12
US8208510B2 (en) 2012-06-26
JP2006294943A (ja) 2006-10-26

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